MOSFET MetalOxideSemiconductorFieldEffectTransistor. OptiMOS TM OptiMOS TM Power-Transistor,300V IPB407N30N. DataSheet. PowerManagement&Multimarket

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1 MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM DataSheet Rev.2. Final PowerManagement&Multimarket

2 1Description D²PAK Features N-channel,normallevel FastDiodewithreducedQrr Optimizedforhardcommutationruggedness Verylowon-resistanceRDS(on) 175 Coperatingtemperature Pb-freeleadplating;RoHScompliant QualifiedaccordingtoJEDEC 1) fortargetapplication Halogen-freeaccordingtoIEC Table1KeyPerformanceParameters Parameter Value Unit VDS 3 V RDS(on),max 4.7 mω ID 44 A Gate Pin 1 Drain Pin 2, Tab Source Pin 3 Type/OrderingCode Package Marking RelatedLinks PG-TO N3N - 1) J-STD2 and JESD22 2

3 TableofContents Description Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Package Outlines Revision History Disclaimer

4 2Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current ID A TC=25 C TC=1 C Pulsed drain current 1) ID,pulse A TC=25 C Avalanche energy, single pulse EAS mj ID=22A,RGS=5Ω Reversediodepeakdv/dt dv/dt kv/µs ID=44A,VDS=15V, di/dt=1a/µs,tj,max=175 C Gate source voltage VGS -2-2 V - Diode hard commutation destructive current 2) Ptot W TC=25 C Operating and storage temperature Tj,Tstg C IEC climatic category; DIN IEC 68-1: 55/175/56 3Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction - case 3) RthJC K/W - Thermal resistance, junction - ambient, minimal footprint RthJA K/W - Thermal resistance, junction - ambient, 6 cm 2 cooling area 4) RthJA K/W - 1) See figure 3 2) Diode pulse current is defined by thermal and/or package limits 3) Defined by design. Not subject to production test. 4) Device on 4 mm x 4 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 7 µm thick) copper area for drain connection. PCB is vertical in still air. 4

5 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS V VGS=V,ID=1mA Gate threshold voltage VGS(th) V VDS=VGS,ID=27µA Zero gate voltage drain current IDSS µa VDS=24V,VGS=V,Tj=25 C VDS=24V,VGS=V,Tj=125 C Gate-source leakage current IGSS na VGS=2V,VDS=V Drain-source on-state resistance RDS(on) mω VGS=1V,ID=44A Gate resistance 1) RG Ω - Transconductance gfs S VDS >2 ID RDS(on)max,ID=44A Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance 1) Ciss pf VGS=V,VDS=1V,f=1MHz Output capacitance 1) Coss pf VGS=V,VDS=1V,f=1MHz Reverse transfer capacitance 1) Crss pf VGS=V,VDS=1V,f=1MHz Turn-on delay time td(on) ns Rise time tr ns Turn-off delay time td(off) ns Fall time tf ns VDD=1V,VGS=1V,ID=22A, RG,ext=1.6Ω VDD=1V,VGS=1V,ID=22A, RG,ext=1.6Ω VDD=1V,VGS=1V,ID=22A, RG,ext=1.6Ω VDD=1V,VGS=1V,ID=22A, RG,ext=1.6Ω Table6Gatechargecharacteristics 2) Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs nc VDD=1V,ID=44A,VGS=to1V Gate to drain charge Qgd nc VDD=1V,ID=44A,VGS=to1V Switching charge Qsw nc VDD=1V,ID=44A,VGS=to1V Gate charge total 1) Qg nc VDD=1V,ID=44A,VGS=to1V Gate plateau voltage Vplateau V VDD=1V,ID=44A,VGS=to1V Output charge Qoss nc VDD=1V,VGS=V 1) Defined by design. Not subject to production test. 2) See Gate charge waveforms for parameter definition 5

6 Table7Reversediode Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Diode continous forward current IS A TC=25 C Diode pulse current 1) IS,pulse A TC=25 C Diode hard commutation current 2) IS,hard A TC=25 C,diF/dt=1A/µs Diode forward voltage VSD V VGS=V,IF=44A,Tj=25 C Reverse recovery time 3) trr ns VR=1V,IF=32.2A,diF/dt=1A/µs Reverse recovery charge 3) Qrr nc VR=1V,IF=32.2A,diF/dt=1A/µs 1) Diode pulse current is defined by thermal and/or package limits 2) Maximum allowed hard-commutated current through diode at di/dt=1 A/µs 3) Defined by design. Not subject to production test. 6

7 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 35 Diagram2:Draincurrent Ptot[W] 2 15 ID[A] TC[ C] Ptot=f(TC) TC[ C] ID=f(TC);VGS>=1V Diagram3:Safeoperatingarea 1 3 Diagram4:Max.transientthermalimpedance 1 1 µs µs.5 ID[A] ms 1 µs ZthJC[K/W] DC 1 ms VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp 1-2 single pulse tp[s] ZthJC=f(tp);parameter:D=tp/T 7

8 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance V 1 V 4 6 V 8 V 1 V ID[A] 5 5 V RDS(on)[mΩ] VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS ID[A] RDS(on)=f(ID);Tj=25 C;parameter:VGS Diagram7:Typ.transfercharacteristics 9 Diagram8:Typ.forwardtransconductance ID[A] 45 gfs[s] C C VGS[V] ID=f(VGS); VDS >2 ID RDS(on)max;parameter:Tj ID[A] gfs=f(id);tj=25 C 8

9 Diagram9:Drain-sourceon-stateresistance 12 Diagram1:Typ.gatethresholdvoltage µa 8 27 µa RDS(on)[mΩ] 6 98% typ VGS(th)[V] Tj[ C] RDS(on)=f(Tj);ID=44A;VGS=1V Tj[ C] VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 1 4 Ciss Coss C 175 C 25 C, 98% 175 C, 98% C[pF] 1 2 IF[A] Crss VDS[V] C=f(VDS);VGS=V;f=1MHz VSD[V] IF=f(VSD);parameter:Tj 9

10 Diagram13:Avalanchecharacteristics 1 2 Diagram14:Typ.gatecharge V IAS[A] C 1 C 25 C VGS[V] V 15 V tav[µs] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) Qgate[nC] VGS=f(Qgate);ID=44Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage 34 Gate charge waveforms VBR(DSS)[V] Tj[ C] VBR(DSS)=f(Tj);ID=1mA 1

11 6PackageOutlines Figure1OutlinePG-TO263-3,dimensionsinmm/inches 11

12 RevisionHistory Revision: ,Rev.2. Previous Revision Revision Date Subjects (major changes since last revision) Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: Publishedby InfineonTechnologiesAG 81726München,Germany 214InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice( Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 12