MOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS CE 800VCoolMOS CEPowerTransistor IPx80R1K4CE. DataSheet. PowerManagement&Multimarket
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- Theodoor Wauters
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1 MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE IPx8R1K4CE DataSheet Rev.2.1 Final PowerManagement&Multimarket
2 IPD8R1K4CE,IPU8R1K4CE 1Description CoolMOS CEisarevolutionarytechnologyforhighvoltagepower MOSFETs.Thehighvoltagecapabilitycombinessafetywithperformance andruggednesstoallowstabledesignsathighestefficiencylevel. CoolMOS 8VCEcomeswithaselectedpackagechoiceofferingthe benefitofreducedsystemcostsandhigherpowerdensitydesigns. 1 DPAK tab 2 3 IPAK tab Features 1) Highvoltagetechnology Extremedv/dtrated Highpeakcurrentcapability Lowgatecharge Loweffectivecapacitances QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(JSTD2 andjesd22) Pbfreeleadplating;RoHScompliant;availablewithhalogenfreeand nonhalogenfreemoldcompound 1) Gate Pin 1 Drain Pin 2 Source Pin 3 Benefits Increasedpowerdensitysolutionsduetosmallerpackage Systemcost/sizesavingsduetoreducedcoolingrequirements Highersystemreliabilityduetolowoperatingtemperatures Applications LEDLightingforretrofitapplicationsinQRFlybacktopology Table1KeyPerformanceParameters Parameter Value Tj=25 C 8 V RDS(on),max 1.4 Ω Qg,typ 23 nc ID,pulse 12 A VGS(th),typ 3 V CO(tr),typ 51 pf Type/OrderingCode Package Marking RelatedLinks IPD8R1K4CE PGTO 252 8R1K4CE see Appendix A IPU8R1K4CE PGTO 251 1) Halogen free version is available with OPN: IPD8R1K4CEAT 2 Rev.2.1,213718
3 IPD8R1K4CE,IPU8R1K4CE TableofContents Description Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Test Circuits Package Outlines Appendix A Revision History Disclaimer Rev.2.1,213718
4 IPD8R1K4CE,IPU8R1K4CE 2Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID A TC=25 C TC=1 C Pulsed drain current 2) ID,pulse 12 A TC=25 C Avalanche energy, single pulse EAS 17 mj ID=1.2A;VDD=5V Avalanche energy, repetitive EAR.14 mj ID=1.2A;VDD=5V Avalanche current, repetitive IAR 1.2 A MOSFET dv/dt ruggedness dv/dt 5 V/ns =...64V Gate source voltage Power dissipation (non FullPAK) TO252, TO251 VGS V static; AC (f>1 Hz) Ptot 63 W TC=25 C Operating and storage temperature Tj,Tstg C Continuous diode forward current IS 3.9 A TC=25 C Diode pulse current 2) IS,pulse 12 A TC=25 C Reverse diode dv/dt 3) dv/dt 4 V/ns =...4V,ISD IS,Tj=25 C Maximum diode commutation speed dif/dt 4 A/µs =...4V,ISD IS,Tj=25 C 3Thermalcharacteristics Table3ThermalcharacteristicsDPAK,IPAK Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 2 C/W Thermal resistance, junction ambient 4) Soldering temperature, wave & reflowsoldering allowed RthJA C/W Tsold 26 C reflow MSL 1 SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6cm 2 cooling area 4) 1) Limited by Tj max. 2) Pulse width tp limited by Tj,max 3) IdenticallowsideandhighsideswitchwithidenticalRG 4) Device on 4mm*4mm*1.5mm one layer epoxy PCB FR4 with 6cm 2 copper area (thickness 7µm) for drain connection. PCB is vertical without air stream cooling. 4 Rev.2.1,213718
5 IPD8R1K4CE,IPU8R1K4CE 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 8 V VGS=V,ID=.25mA Gate threshold voltage V(GS)th V =VGS,ID=.24mA Zero gate voltage drain current IDSS 5 1 µa =8V,VGS=V,Tj=25 C =8V,VGS=V,Tj=15 C Gatesource leakage curent IGSS 1 na VGS=2V,=V Drainsource onstate resistance RDS(on) Ω VGS=1V,ID=2.3A,Tj=25 C VGS=1V,ID=2.3A,Tj=15 C Gate resistance RG 1.2 Ω f=1mhz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 57 pf VGS=V,=1V,f=1MHz Output capacitance Coss 25 pf VGS=V,=1V,f=1MHz Effective output capacitance, energy related 1) Co(er) 19 pf VGS=V,=...48V Effective output capacitance, time related Co(tr) 51 pf ID=constant,VGS=V,=...48V 2) Turnon delay time td(on) 25 ns Rise time tr 15 ns Turnoff delay time td(off) 72 ns Fall time tf 12 ns VDD=4V,VGS=/1V,ID=3.9A, RG=22Ω VDD=4V,VGS=/1V,ID=3.9A, RG=22Ω VDD=4V,VGS=/1V,ID=3.9A, RG=22Ω VDD=4V,VGS=1V,ID=3.9A, RG=22Ω Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 3 nc VDD=64V,ID=3.9A,VGS=to1V Gate to drain charge Qgd 12 nc VDD=64V,ID=3.9A,VGS=to1V Gate charge total Qg 23 nc VDD=64V,ID=3.9A,VGS=to1V Gate plateau voltage Vplateau 5.5 V VDD=64V,ID=3.9A,VGS=to1V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileisrisingfromto8%V(BR)DSS 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileisrisingfromto8%V(BR)DSS 5 Rev.2.1,213718
6 IPD8R1K4CE,IPU8R1K4CE Table7Reversediodecharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Diode forward voltage VSD V VGS=V,IF=3.9A,Tj=25 C Reverse recovery time trr 52 ns VR=4V,IF=3.9A,diF/dt=1A/µs Reverse recovery charge Qrr 4 µc VR=4V,IF=3.9A,diF/dt=1A/µs Peak reverse recovery current Irrm 12 A VR=4V,IF=3.9A,diF/dt=1A/µs 6 Rev.2.1,213718
7 IPD8R1K4CE,IPU8R1K4CE 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 7 Diagram2:Safeoperatingarea µs 1 µs Ptot[W] 4 3 ID[A] 1 1 µs 1 ms 1 ms DC TC[ C] Ptot=f(TC) [V] ID=f();TC=25 C;D=;parameter:tp Diagram3:Max.transientthermalimpedance 1 1 Diagram4:Typ.outputcharacteristics 15 2 V 12 1 V ZthJC[K/W] single pulse ID[A] V 6 V V 5 V tp[s] ZthJC=f(tP);parameter:D=tp/T [V] ID=f();Tj=25 C;tp=1µs;parameter:VGS 7 Rev.2.1,213718
8 IPD8R1K4CE,IPU8R1K4CE Diagram5:Typ.outputcharacteristics 6 2 V Diagram6:Typ.drainsourceonstateresistance V 6 V V 4.6 ID[A] 3 5 V RDS(on)[Ω] V 1 V 2 V V V 4.5 V 5 V 5.5 V [V] ID=f();Tj=15 C;tp=1µs;parameter:VGS ID[A] RDS(on)=f(ID);Tj=15 C;parameter:VGS Diagram7:Drainsourceonstateresistance Diagram8:Typ.transfercharacteristics C RDS(on)[Ω] % typ ID[A] 5 15 C Tj[ C] RDS(on)=f(Tj);ID=2.3A;VGS=1V VGS[V] ID=f(VGS); >2 ID RDS(on)max;tp=1µs;parameter:Tj 8 Rev.2.1,213718
9 8V CoolMOS CE Power Transistor IPD8R1K4CE, IPU8R1K4CE Diagram 9: Typ. gate charge Diagram 1: Forward characteristics of reverse diode V 25 C (98%) 64 V C 15 C 6 IF [A] VGS [V] 15 C (98%) Qgate [nc] VSD [V] VGS=f(Qgate); ID=3.9 A pulsed; parameter: VDD IF=f(VSD); tp=1 µs; parameter: Tj Diagram 11: Avalanche energy Diagram 12: Drainsource breakdown voltage VBR(DSS) [V] EAS [mj] Tj [ C] Tj [ C] EAS=f(Tj); ID=1.2 A; VDD=5 V 2 VBR(DSS)=f(Tj); ID=.25 ma 9 Rev. 2.1,
10 8V CoolMOS CE Power Transistor IPD8R1K4CE, IPU8R1K4CE Diagram 13: Typ. capacitances Diagram 14: Typ. Coss stored energy Ciss Eoss [µj] C [pf] 3 12 Coss Crss [V] [V] C=f(); VGS= V; f=1 MHz 1 Eoss=f() 1 Rev. 2.1,
11 8V CoolMOS CE Power Transistor IPD8R1K4CE, IPU8R1K4CE 6 Test Circuits Table 8 Diode characteristics Test circuit for diode characteristics Diode recovery waveform V,I Rg1 ( peak) trr IF Rg 2 tf ts dif / dt QF IF t dirr / dt trr =tf +ts Qrr = QF + QS Irrm Rg1 = Rg 2 IF 1 %Irrm QS Table 9 Switching times Switching times test circuit for inductive load Switching times waveform 9% VGS VGS 1% td(on) td(off) tr ton tf toff Table 1 Unclamped inductive load Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VD 11 ID Rev. 2.1,
12 8V CoolMOS CE Power Transistor IPD8R1K4CE, IPU8R1K4CE 7 Package Outlines Figure 1 Outline PGTO 252, dimensions in mm/inches 12 Rev. 2.1,
13 8V CoolMOS CE Power Transistor IPD8R1K4CE, IPU8R1K4CE Figure 2 Outline PGTO 251, dimensions in mm/inches 13 Rev. 2.1,
14 8V CoolMOS CE Power Transistor IPD8R1K4CE, IPU8R1K4CE 8 Appendix A Table 11 Related Links IFX CoolMOS Webpage: IFX Design tools: 14 Rev. 2.1,
15 8V CoolMOS CE Power Transistor IPD8R1K4CE, IPU8R1K4CE Revision History IPD8R1K4CE, IPU8R1K4CE Revision: , Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) Release of final version updtae to halogen free mold compound We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Edition Published by Infineon Technologies AG München, Germany 211 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 15 Rev. 2.1,
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