MOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS CE 500VCoolMOS CEPowerTransistor IPA50R190CE. DataSheet. PowerManagement&Multimarket

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1 MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE DataSheet Rev.2.2 Final PowerManagement&Multimarket

2 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies.coolmos CEseriescombinesthe experienceoftheleadingsjmosfetsupplierwithhighclassinnovation whilerepresentingacostappealingalternativecomparedtostandard MOSFETsintargetapplications.Theresultingdevicesprovideallbenefits ofafastswitchingsjmosfetwhilenotsacrificingeaseofuse. Extremelylowswitchingandconductionlossesmakeswitching applicationsevenmoreefficient,morecompact,lighterandcooler. TO22FP Features ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Veryhighcommutationruggedness Easytouse/drive Pbfreeplating,Halogenfreemoldcompound Qualifiedforstandardgradeapplications Gate Pin 1 Drain Pin 2 Applications PFCstages,hardswitchingPWMstagesandresonantswitchingPWM stagesfore.g.pcsilverbox,lcd&pdptvandlighting. Source Pin 3 Table1KeyPerformanceParameters Parameter Value Unit Tj,max 55 V RDS(on),max.19 Ω Qg.typ 47.2 nc ID,pulse 63 A Eoss@4V 4.42 µj Body diode di/dt 5 A/µs Type/OrderingCode Package Marking RelatedLinks PGTO 22 FullPAK 5R19CE see Appendix A 2

3 TableofContents Description Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Test Circuits Package Outlines Appendix A Revision History Disclaimer

4 2Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID A TC = 25 C TC = 1 C Pulsed drain current 2) ID,pulse 63 A TC=25 C Avalanche energy, single pulse EAS 339 mj ID =7.7A; VDD = 5V Avalanche energy, repetitive EAR.51 mj ID =7.7A; VDD = 5V Avalanche current, repetitive IAR 7.7 A MOSFET dv/dt ruggedness dv/dt 5 V/ns VDS=...4V Gate source voltage VGS V static; AC (f>1 Hz) Power dissipation Ptot 32 W TC=25 C Operating and storage temperature Tj,Tstg 4 15 C Mounting torque 5 Ncm M2.5 screws Continuous diode forward current IS 16. A TC=25 C Diode pulse current 2) IS,pulse 63. A TC = 25 C Reverse diode dv/dt 3) dv/dt 15 V/ns VDS=...4V,ISD<=IS,Tj=25 C, tcond<2µs Maximum diode commutation speed 3) dif/dt 5 A/µs VDS=...4V,ISD<=IS,Tj=25 C, tcond<2µs Insulation withstand voltage for TO22FP VISO 25 V Vrms,TC=25 C,t=1min 3Thermalcharacteristics Table3ThermalcharacteristicsTO22FullPAK Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 3.9 C/W Thermal resistance, junction ambient RthJA 8 C/W leaded Soldering temperature, wavesoldering only allowed at leads Tsold 26 C 1.6mm (.63 in.) from case for 1s 1) Limited by Tj max <15 C 2) Pulse width tp limited by Tj,max 3) VDClink=4V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG 4

5 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 5 V VGS=V,ID=1mA Gate threshold voltage V(GS)th V VDS=VGS,ID=.51mA Zero gate voltage drain current IDSS 1 1 µa VDS=5V,VGS=V,Tj=25 C VDS=5V,VGS=V,Tj=15 C Gatesource leakage curent IGSS 1 na VGS=2V,VDS=V Drainsource onstate resistance RDS(on) Ω VGS=13V,ID=6.2A,Tj=25 C VGS=13V,ID=6.2A,Tj=15 C Gate resistance RG 3 Ω f=1mhz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 1137 pf VGS=V,VDS=1V,f=1MHz Output capacitance Coss 68 pf VGS=V,VDS=1V,f=1MHz Effective output capacitance, energy related 1) Co(er) 56 pf VGS=V,VDS=...4V Effective output capacitance, time related 2) Co(tr) 251 pf ID=constant,VGS=V,VDS=...4V Turnon delay time td(on) 9.5 ns Rise time tr 8.5 ns Turnoff delay time td(off) 54 ns Fall time tf 7.5 ns VDD=4V,VGS=13V,ID=7.7A, RG=3.4Ω VDD=4V,VGS=13V,ID=7.7A, RG=3.4Ω VDD=4V,VGS=13V,ID=7.7A, RG=3.4Ω VDD=4V,VGS=13V,ID=7.7A, RG=3.4Ω Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 6.1 nc VDD=4V,ID=7.7A,VGS=to1V Gate to drain charge Qgd 24.5 nc VDD=4V,ID=7.7A,VGS=to1V Gate charge total Qg 47.2 nc VDD=4V,ID=7.7A,VGS=to1V Gate plateau voltage Vplateau 5.4 V VDD=4V,ID=7.7A,VGS=to1V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfromto8%V(BR)DSS 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfromto8%V(BR)DSS 5

6 Table7Reversediodecharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Diode forward voltage VSD.85 V VGS=V,IF=7.7A,Tf=25 C Reverse recovery time trr 28 ns VR=4V,IF=7.7A,diF/dt=1A/µs Reverse recovery charge Qrr 3.2 µc VR=4V,IF=7.7A,diF/dt=1A/µs Peak reverse recovery current Irrm 21.5 A VR=4V,IF=7.7A,diF/dt=1A/µs 6

7 5Electricalcharacteristicsdiagrams Powerdissipation 5 Max.transientthermalimpedance Ptot[W] 3 2 ZthJC[K/W] single pulse TC[ C] Ptot=f(TC) tp[s] ZthJC=f(tP);parameter:D=tp/T Safeoperatingarea 1 2 Safeoperatingarea µs 1 µs µs 1 µs µs 1 µs ID[A] 1 1 ms ID[A] 1 1 ms 1 ms 1 ms 1 1 DC 1 1 DC VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp VDS[V] ID=f(VDS);TC=8 C;D=;parameter:tp 7

8 Typ.outputcharacteristicsTj=25 C 8 Typ.outputcharacteristicsTj=125 C V 1 V V 1 V ID[A] V ID[A] V 7 V 3 7 V 2 6 V V 5.5 V 5 V 4.5 V VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS V 1 5 V V VDS[V] ID=f(VDS);Tj=125 C;parameter:VGS Typ.drainsourceonstateresistance.8 Drainsourceonstateresistance V 5.5 V 6 V 6.5 V 7 V.4 98% RDS(on)[Ω].5 1 V RDS(on)[Ω].3 typ ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS Tj[ C] RDS(on)=f(Tj);ID=6.2A;VGS=13V 8

9 Typ.transfercharacteristics Typ.gatecharge C V 5 7 ID[A] C VGS[V] V VGS[V] ID=f(VGS);VDS=2V;parameter:Tj Qgate[nC] VGS=f(Qgate);ID=7.7Apulsed;parameter:VDD Avalancheenergy EAS[mJ] Tj[ C] EAS=f(Tj);ID=7.7A;VDD=5V Drainsourcebreakdownvoltage VBR(DSS)[V] Tj[ C] VBR(DSS)=f(Tj);ID=1mA 9

10 Typ.capacitances 1 4 Typ.Cossstoredenergy Ciss 6 5 C[pF] 1 2 Coss Eoss[µJ] Crss VDS[V] C=f(VDS);VGS=V;f=1MHz VDS[V] Eoss=f(VDS) Forwardcharacteristicsofreversediode C 25 C IF[A] VSD[V] IF=f(VSD);parameter:Tj 1

11 6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g 1 V,I (peak) R g 2 I F di F / dt t F t rr t S I F t I F R g 1 = R g 2 I rrm Q F Q S di rr / dt 1 %I rrm t rr =t F +t S Q rr = Q F +Q S Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform 9% V GS V GS 1% t d(on) t r t d(off) t f t on t off Table1Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D I D 11

12 7PackageOutlines DIM MILLIMETERS INCHES MIN MAX MIN MAX A A A b b b b b c D D1 E e e1 N H L L1 øp Q (BSC) (BSC) DOCUMENT NO. Z8B3319 SCALE 2.5 EUROPEAN PROJECTION 2.5 ISSUE DATE REVISION 4 5mm Figure1OutlinePGTO22FullPAK,dimensionsinmm/inches 12

13 8AppendixA Table11RelatedLinks IFXCoolMOSWebpage: IFXDesigntools: 13

14 RevisionHistory Revision:215821,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) Release of final Data sheet Release of final data sheet Release of final data sheet change to standard grade qualification WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: Publishedby InfineonTechnologiesAG 81726München,Germany 215InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice( Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 14