MOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS C7 650VCoolMOS C7PowerTransistor IPB65R190C7. DataSheet. PowerManagement&Multimarket

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1 MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 DataSheet Rev.2.1 Final PowerManagement&Multimarket

2 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies. CoolMOS C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation.Theproductportfolio providesallbenefitsoffastswitchingsuperjunctionmosfetsoffering betterefficiency,reducedgatecharge,easyimplementationand outstandingreliability. 1 D²PAK tab 2 3 Features IncreasedMOSFETdv/dtruggedness BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg BestinclassRDS(on)/package Easytouse/drive Pbfreeplating,halogenfreemoldcompound QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(JSTD2 andjesd22) Benefits Enablinghighersystemefficiency Enablinghigherfrequency/increasedpowerdensitysolutions Systemcost/sizesavingsduetoreducedcoolingrequirements Highersystemreliabilityduetoloweroperatingtemperatures Gate Pin 1 Drain Pin 2, tab Source Pin 3 Applications PFCstagesandhardswitchingPWMstagesfore.g.Computing,Server, Telecom,UPSandSolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Tj,max 7 V RDS(on),max 19 mω Qg.typ 23 nc ID,pulse 49 A Eoss@4V 2.7 µj Body diode di/dt 55 A/µs Type/OrderingCode Package Marking RelatedLinks PGTO C719 see Appendix A 2

3 TableofContents Description Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Test Circuits Package Outlines Appendix A Revision History Disclaimer

4 2Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID 13 8 A TC=25 C TC= C Pulsed drain current 2) ID,pulse 49 A TC=25 C Avalanche energy, single pulse EAS 57 mj ID=5.4A; VDD=5V; see table Avalanche energy, repetitive EAR.29 mj ID=5.4A; VDD=5V; see table Avalanche current, single pulse IAS 5.4 A MOSFET dv/dt ruggedness dv/dt V/ns =...4V Gate source voltage (static) VGS 2 2 V static; Gate source voltage (dynamic) VGS 3 3 V AC (f>1 Hz) Power dissipation Ptot 72 W TC=25 C Storage temperature Tstg C Operating junction temperature Tj C Mounting torque n.a. Ncm Continuous diode forward current IS 13 A TC=25 C Diode pulse current 2) IS,pulse 49 A TC=25 C Reverse diode dv/dt 3) dv/dt 1 V/ns =...4V,ISD<=IS,Tj=25 C see table 8 Maximum diode commutation speed dif/dt 55 A/µs =...4V,ISD<=IS,Tj=25 C see table 8 Insulation withstand voltage VISO n.a. V Vrms,TC=25 C,t=1min 1) Limited by Tj max. 2) Pulse width tp limited by Tj,max 3) IdenticallowsideandhighsideswitchwithidenticalRG 4

5 3Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 1.73 C/W Thermal resistance, junction ambient RthJA 62 C/W device on PCB, minimal footprint Thermal resistance, junction ambient for SMD version Soldering temperature, wave & reflow soldering allowed RthJA C/W Tsold 26 C reflow MSL1 Device on 4mm*4mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 7µm thickness) copper area for drain connection and cooling. PCB is vertical without air stream cooling. 5

6 4Electricalcharacteristics attj=25 C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 65 V VGS=V,ID=1mA Gate threshold voltage V(GS)th V =VGS,ID=.29mA Zero gate voltage drain current IDSS 1 µa =65,VGS=V,Tj=25 C =65,VGS=V,Tj=15 C Gatesource leakage current IGSS na VGS=2V,=V Drainsource onstate resistance RDS(on) Ω VGS=V,ID=5.7A,Tj=25 C VGS=V,ID=5.7A,Tj=15 C Gate resistance RG 1.1 Ω f=1mhz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 115 pf VGS=V,=4V,f=25kHz Output capacitance Coss 17 pf VGS=V,=4V,f=25kHz Effective output capacitance, energy related 1) Co(er) 34 pf VGS=V,=...4V Effective output capacitance, time related Co(tr) 374 pf ID=constant,VGS=V,=...4V 2) Turnon delay time td(on) 11 ns Rise time tr 11 ns Turnoff delay time td(off) 54 ns Fall time tf 9 ns VDD=4V,VGS=13V,ID=5.7A, RG=Ω;seetable9 VDD=4V,VGS=13V,ID=5.7A, RG=Ω;seetable9 VDD=4V,VGS=13V,ID=5.7A, RG=Ω;seetable9 VDD=4V,VGS=13V,ID=5.7A, RG=Ω;seetable9 Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 6 nc VDD=4V,ID=5.7A,VGS=toV Gate to drain charge Qgd 7 nc VDD=4V,ID=5.7A,VGS=toV Gate charge total Qg 23 nc VDD=4V,ID=5.7A,VGS=toV Gate plateau voltage Vplateau 5.4 V VDD=4V,ID=5.7A,VGS=toV 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileisrisingfromto4V 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileisrisingfromto4V 6

7 Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD.9 V VGS=V,IF=5.7A,Tj=25 C Reverse recovery time trr 83 ns Reverse recovery charge Qrr 6.5 µc Peak reverse recovery current Irrm 18 A VR=4V,IF=13A,diF/dt=55A/µs; see table 8 VR=4V,IF=13A,diF/dt=55A/µs; see table 8 VR=4V,IF=13A,diF/dt=55A/µs; see table 8 7

8 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 2 1 µs µs µs 1 1 ms ms DC 5 Ptot[W] 4 3 ID[A] TC[ C] Ptot=f(TC) [V] ID=f();TC=25 C;D=;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance ID[A] 2 µs 1 µs µs ms ms DC ZthJC[K/W] single pulse [V] ID=f();TC=8 C;D=;parameter:tp tp[s] ZthJC=f(tP);parameter:D=tp/T 8

9 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics V V 8 V 7 V V V 8 V 7 V 6 V 2 3 ID[A] 2 ID[A] V 6 V 5.5 V 5 V 4.5 V [V] ID=f();Tj=25 C;parameter:VGS 5 V V [V] ID=f();Tj=125 C;parameter:VGS Diagram7:Typ.drainsourceonstateresistance V 6 V 6.5 V 7 V Diagram8:Drainsourceonstateresistance V.4 V.35 RDS(on)[Ω].5 RDS(on)[Ω] %.4.2 typ ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS Tj[ C] RDS(on)=f(Tj);ID=5.7A;VGS=V 9

10 Diagram9:Typ.transfercharacteristics Diagram:Typ.gatecharge V 4 V 5 25 C 4 8 ID[A] 3 15 C VGS[V] VGS[V] ID=f(VGS);=2V;parameter:Tj Qgate[nC] VGS=f(Qgate);ID=5.7Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode 2 Diagram12:Avalancheenergy IF[A] 125 C 25 C EAS[mJ] VSD[V] IF=f(VSD);parameter:Tj Tj[ C] EAS=f(Tj);ID=5.4A;VDD=5V

11 65V CoolMOS C7 Power Transistor Diagram 13: Drainsource breakdown voltage Diagram 14: Typ. capacitances Ciss 68 C [pf] VBR(DSS) [V] Coss Crss Tj [ C] [V] VBR(DSS)=f(Tj); ID=1 ma C=f(); VGS= V; f=25 khz Diagram 15: Typ. Coss stored energy Eoss [µj] [V] Eoss=f() 11 Rev. 2.1, 21321

12 65V CoolMOS C7 Power Transistor 6 Test Circuits Table 8 Diode characteristics Test circuit for diode characteristics Diode recovery waveform V,I Rg1 ( peak) trr IF Rg 2 tf ts dif / dt QF IF t dirr / dt trr =tf +ts Qrr = QF + QS Irrm Rg1 = Rg 2 IF %Irrm QS Table 9 Switching times Switching times test circuit for inductive load Switching times waveform 9% VGS VGS % td(on) td(off) tr ton tf toff Table Unclamped inductive load Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VD 12 ID Rev. 2.1, 21321

13 65V CoolMOS C7 Power Transistor 7 Package Outlines Figure 1 Outline PGTO 263, dimensions in mm/inches 13 Rev. 2.1, 21321

14 65V CoolMOS C7 Power Transistor 8 Appendix A Table 11 Related Links IFX CoolMOSTM C7 Webpage: IFX CoolMOSTM C7 application note: IFX CoolMOSTM C7 simulation model: IFX Design tools: 14 Rev. 2.1, 21321

15 65V CoolMOS C7 Power Transistor Revision History Revision: 21321, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) Release of final version We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Edition 2181 Published by Infineon Technologies AG München, Germany 211 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 15 Rev. 2.1, 21321