MOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS C7 650VCoolMOS C7PowerTransistor IPL65R070C7. DataSheet. PowerManagement&Multimarket

Transcriptie

1 MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket

2 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies. ThinPAK8x8 CoolMOS C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation.Theproductportfolio providesallbenefitsoffastswitchingsuperjunctionmosfetsoffering betterefficiency,reducedgatecharge,easyimplementationand outstandingreliability. Features IncreasedMOSFETdv/dtruggedness BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg ThinPAKSMDPackagewithverylowparasiticinductancetoenablefast andreliableswitchingwithminimumofsizetoincreasepowerdensity Easytouse/driveduetodriversourcepinforbettercontrolofthegate. Pbfreeplating,halogenfreemoldcompound QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(JSTD20 andjesd22) Benefits Enablinghighersystemefficiencybylowerswitchinglosses Enablinghigherfrequency/increasedpowerdensitysolutions Systemcost/sizesavingsduetoreducedcoolingrequirements Highersystemreliabilityduetoloweroperatingtemperatures Applications PFCstagesandhardswitchingPWMstagesfore.g.Computing,Server, Telecom,UPSandSolar. Gate Pin 1 Driver Source Pin 2 Drain Pin 5 Power Source Pin 3,4 Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Tj,max 700 V RDS(on),max 70 mω Qg.typ 64 nc ID,pulse 145 A Eoss@400V 8 µj Body diode di/dt 60 A/µs Type/OrderingCode Package Marking RelatedLinks PGVSON4 65C7070 see Appendix A 2

3 TableofContents Description Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Test Circuits Package Outlines Appendix A Revision History Disclaimer

4 2Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID A TC=25 C TC=100 C Pulsed drain current 2) ID,pulse 145 A TC=25 C Avalanche energy, single pulse EAS 171 mj ID=10.2A; VDD=50V; see table 10 Avalanche energy, repetitive EAR 0.85 mj ID=10.2A; VDD=50V; see table 10 Avalanche current, single pulse IAS 10.2 A MOSFET dv/dt ruggedness dv/dt 100 V/ns = V Gate source voltage (static) VGS V static; Gate source voltage (dynamic) VGS V AC (f>1 Hz) Power dissipation Ptot 169 W TC=25 C Storage temperature Tstg C Operating junction temperature Tj C Mounting torque n.a. Ncm Continuous diode forward current IS 28 A TC=25 C Diode pulse current 2) IS,pulse 145 A TC=25 C Reverse diode dv/dt 3) dv/dt 1.5 V/ns = V,ISD<=IS,Tj=25 C see table 8 Maximum diode commutation speed dif/dt 60 A/µs = V,ISD<=IS,Tj=25 C see table 8 Insulation withstand voltage VISO n.a. V Vrms,TC=25 C,t=1min 1) Limited by Tj max. 2) Pulse width tp limited by Tj,max 3) IdenticallowsideandhighsideswitchwithidenticalRG 4

5 3Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 0.74 C/W Thermal resistance, junction ambient RthJA 62 C/W device on PCB, minimal footprint Thermal resistance, junction ambient for SMD version RthJA C/W Reflow soldering temperature Tsold 260 C reflow MSL3 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thickness) copper area for drain connection and cooling. PCB is vertical without air stream cooling. 5

6 4Electricalcharacteristics attj=25 C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 650 V VGS=0V,ID=1mA Gate threshold voltage V(GS)th V =VGS,ID=0.85mA Zero gate voltage drain current IDSS 15 1 µa =650,VGS=0V,Tj=25 C =650,VGS=0V,Tj=150 C Gatesource leakage current IGSS 100 na VGS=20V,=0V Drainsource onstate resistance RDS(on) Ω VGS=10V,ID=8.5A,Tj=25 C VGS=10V,ID=8.5A,Tj=150 C Gate resistance RG 0.85 Ω f=1mhz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 3020 pf VGS=0V,=400V,f=250kHz Output capacitance Coss 48 pf VGS=0V,=400V,f=250kHz Effective output capacitance, energy related 1) Co(er) 100 pf VGS=0V,= V Effective output capacitance, time related Co(tr) 1110 pf ID=constant,VGS=0V,= V 2) Turnon delay time td(on) 14 ns Rise time tr 6 ns Turnoff delay time td(off) 92 ns Fall time tf 11 ns VDD=400V,VGS=13V,ID=8.5A, RG=5.3Ω;seetable9 VDD=400V,VGS=13V,ID=8.5A, RG=5.3Ω;seetable9 VDD=400V,VGS=13V,ID=8.5A, RG=5.3Ω;seetable9 VDD=400V,VGS=13V,ID=8.5A, RG=5.3Ω;seetable9 Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 16 nc VDD=400V,ID=8.5A,VGS=0to10V Gate to drain charge Qgd 21 nc VDD=400V,ID=8.5A,VGS=0to10V Gate charge total Qg 64 nc VDD=400V,ID=8.5A,VGS=0to10V Gate plateau voltage Vplateau 5.0 V VDD=400V,ID=8.5A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileisrisingfrom0to400V 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileisrisingfrom0to400V 6

7 Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD 0.8 V VGS=0V,IF=8.5A,Tj=25 C Reverse recovery time trr 800 ns Reverse recovery charge Qrr 10 µc Peak reverse recovery current Irrm 30 A VR=400V,IF=28A,diF/dt=60A/µs; see table 8 VR=400V,IF=28A,diF/dt=60A/µs; see table 8 VR=400V,IF=28A,diF/dt=60A/µs; see table 8 7

8 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 180 Diagram2:Safeoperatingarea µs 1 ms 10 ms 10 µs 1 µs DC Ptot[W] ID[A] TC[ C] Ptot=f(TC) [V] ID=f();TC=25 C;D=0;parameter:tp Diagram3:Safeoperatingarea 10 3 Diagram4:Max.transientthermalimpedance ms 10 ms 100 µs 10 µs 1 µs DC 0.2 ID[A] 10 0 ZthJC[K/W] single pulse [V] ID=f();TC=80 C;D=0;parameter:tp tp[s] ZthJC=f(tP);parameter:D=tp/T 8

9 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics V 10 V 8 V V 10 V 7 V 8 V V V ID[A] 80 ID[A] V 60 6 V V 20 5 V V [V] V V [V] ID=f();Tj=25 C;parameter:VGS ID=f();Tj=125 C;parameter:VGS Diagram7:Typ.drainsourceonstateresistance V 6 V 6.5 V 7 V 20 V 10 V Diagram8:Drainsourceonstateresistance RDS(on)[Ω] RDS(on)[Ω] % typ ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS Tj[ C] RDS(on)=f(Tj);ID=8.5A;VGS=10V 9

10 Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge C V 400 V ID[A] C VGS[V] VGS[V] ID=f(VGS);=20V;parameter:Tj Qgate[nC] VGS=f(Qgate);ID=8.5Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode 10 2 Diagram12:Avalancheenergy C 25 C 120 IF[A] EAS[mJ] VSD[V] IF=f(VSD);parameter:Tj Tj[ C] EAS=f(Tj);ID=10.2A;VDD=50V 10

11 Diagram13:Drainsourcebreakdownvoltage 760 Diagram14:Typ.capacitances Ciss 700 VBR(DSS)[V] C[pF] Coss Crss Tj[ C] VBR(DSS)=f(Tj);ID=1mA [V] C=f();VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy Eoss[µJ] [V] Eoss=f() 11

12 650V CoolMOS C7 Power Transistor 6 Test Circuits Table 8 Diode characteristics Test circuit for diode characteristics Diode recovery waveform V,I Rg1 ( peak) trr IF Rg 2 tf ts dif / dt QF IF t dirr / dt trr =tf +ts Qrr = QF + QS Irrm Rg1 = Rg 2 IF 10 %Irrm QS Table 9 switching times (ss) Switching times test circuit for inductive load Switching times waveform 90% VGS VGS 10% td(on) td(off) tr ton tf toff Table 10 Unclamped inductive load (ss) Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VD 12 ID Rev. 2.0,

13 650V CoolMOS C7 Power Transistor 7 Package Outlines Figure 1 Outline PGVSON4, dimensions in mm/inches 13 Rev. 2.0,

14 650V CoolMOS C7 Power Transistor 8 Appendix A Table 11 Related Links IFX CoolMOSTM C7 Webpage: IFX CoolMOSTM C7 application note: IFX CoolMOSTM C7 simulation model: IFX Design tools: 14 Rev. 2.0,

15 650V CoolMOS C7 Power Transistor Revision History Revision: , Rev. 2.0 Previous Revision Revision Date Subjects (major changes since last revision) Release of final version We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Edition Published by Infineon Technologies AG München, Germany 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 15 Rev. 2.0,