MOSFET MetalOxideSemiconductorFieldEffectTransistor. OptiMOS TM OptiMOS TM 5Power-Transistor,100V IPT015N10N5. DataSheet. PowerManagement&Multimarket

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1 MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM DataSheet Rev.2.1 Final PowerManagement&Multimarket

2 1Description Features Idealforhighfrequencyswitchingandsync.rec. ExcellentgatechargexRDS(on)product(FOM) VerylowonresistanceRDS(on) Nchannel,normallevel 1%avalanchetested Pbfreeplating;RoHScompliant QualifiedaccordingtoJEDEC 1) fortargetapplications HalogenfreeaccordingtoIEC HSOF Tab Table1KeyPerformanceParameters Parameter Value Unit VDS 1 V RDS(on),max 1.5 mω ID 3 A Qoss 213 nc QG(V..1V) 169 nc Gate Pin 1 Drain Tab Source Pin 28 Type/OrderingCode Package Marking RelatedLinks PGHSOF81 15N1N5 1) JSTD2 and JESD22 2

3 TableofContents Description Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Package Outlines Revision History Disclaimer

4 2Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current ID Pulsed drain current 2) ID,pulse 12 A TC=25 C A VGS=1V,TC=25 C VGS=1V,TC=1 C VGS=1V,TC=25 C,RthJA=4K/W 1) Avalanche energy, single pulse 3) EAS 652 mj ID=15A,RGS=25Ω Gate source voltage VGS 2 2 V Power dissipation Ptot 375 W TC=25 C Operating and storage temperature Tj,Tstg C IEC climatic category; DIN IEC 681: 55/175/56 3Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC.2.4 K/W Device on PCB, minimal footprint RthJA 62 K/W Device on PCB, 6 cm² cooling area 1) RthJA 4 K/W 1) Device on 4 mm x 4 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 7 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information 4

5 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 1 V VGS=V,ID=1mA Gate threshold voltage VGS(th) V VDS=VGS,ID=28µA Zero gate voltage drain current IDSS µa VDS=1V,VGS=V,Tj=25 C VDS=1V,VGS=V,Tj=125 C Gatesource leakage current IGSS 1 1 na VGS=2V,VDS=V Drainsource onstate resistance RDS(on) Gate resistance 1) RG Ω mω VGS=1V,ID=15A VGS=6V,ID=75A Transconductance gfs S VDS >2 ID RDS(on)max,ID=1A Table5Dynamiccharacteristics 1) Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss pf VGS=V,VDS=5V,f=1MHz Output capacitance Coss pf VGS=V,VDS=5V,f=1MHz Reverse transfer capacitance Crss 8 14 pf VGS=V,VDS=5V,f=1MHz Turnon delay time td(on) 36 ns Rise time tr 3 ns Turnoff delay time td(off) 85 ns Fall time tf 3 ns VDD=5V,VGS=1V,ID=1A, RG,ext=1.8Ω VDD=5V,VGS=1V,ID=1A, RG,ext=1.8Ω VDD=5V,VGS=1V,ID=1A, RG,ext=1.8Ω VDD=5V,VGS=1V,ID=1A, RG,ext=1.8Ω 1) Defined by design. Not subject to production test. 5

6 Table6Gatechargecharacteristics 1) Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Gate to source charge Qgs 53 nc VDD=5V,ID=1A,VGS=to1V Gate charge at threshold Qg(th) 36 nc VDD=5V,ID=1A,VGS=to1V Gate to drain charge 2) Qgd nc VDD=5V,ID=1A,VGS=to1V Switching charge Qsw 51 nc VDD=5V,ID=1A,VGS=to1V Gate charge total 2) Qg nc VDD=5V,ID=1A,VGS=to1V Gate plateau voltage Vplateau 4.4 V VDD=5V,ID=1A,VGS=to1V Gate charge total, sync. FET Qg(sync) 146 nc VDS=.1V,VGS=to1V Output charge 2) Qoss nc VDD=5V,VGS=V Table7Reversediode Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Diode continuous forward current IS 3 A TC=25 C Diode pulse current IS,pulse 12 A TC=25 C Diode forward voltage VSD V VGS=V,IF=1A,Tj=25 C Reverse recovery time 2) trr ns VR=5V,IF=1A,diF/dt=1A/µs Reverse recovery charge 2) Qrr nc VR=5V,IF=1A,diF/dt=1A/µs 1) See Gate charge waveforms for parameter definition 2) Defined by design. Not subject to production test. 6

7 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 4 Diagram2:Draincurrent Ptot[W] ID[A] TC[ C] Ptot=f(TC) TC[ C] ID=f(TC);VGS 1V Diagram3:Safeoperatingarea 1 4 Diagram4:Max.transientthermalimpedance µs 1 µs.5 ID[A] ms 1 µs ZthJC[K/W] ms DC single pulse VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp tp[s] ZthJC=f(tp);parameter:D=tp/T 7

8 Diagram5:Typ.outputcharacteristics V 7 V 6 V Diagram6:Typ.drainsourceonresistance 3. 5 V 5.5 V V 2. 6 V ID[A] V RDS(on)[mΩ] V 1 V VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS ID[A] RDS(on)=f(ID);Tj=25 C;parameter:VGS Diagram7:Typ.transfercharacteristics 7 Diagram8:Typ.forwardtransconductance ID[A] 4 3 gfs[s] C 25 C VGS[V] ID=f(VGS); VDS >2 ID RDS(on)max;parameter:Tj ID[A] gfs=f(id);tj=25 C 8

9 Diagram9:Drainsourceonstateresistance 3.5 Diagram1:Typ.gatethresholdvoltage µa 28 µa RDS(on)[mΩ] max typ VGS(th)[V] Tj[ C] RDS(on)=f(Tj);ID=15A;VGS=1V Tj[ C] VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances 1 5 Diagram12:Forwardcharacteristicsofreversediode C 175 C 175 C max 25 C max 1 4 Ciss 1 3 Coss C[pF] 1 3 IF[A] Crss VDS[V] C=f(VDS);VGS=V;f=1MHz VSD[V] IF=f(VSD);parameter:Tj 9

10 Diagram13:Avalanchecharacteristics 1 3 Diagram14:Typ.gatecharge V C V 8 V IAV[A] 1 C VGS[V] C tav[µs] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) Qgate[nC] VGS=f(Qgate);ID=1Apulsed;parameter:VDD Diagram15:Drainsourcebreakdownvoltage 11 Gate charge waveforms VBR(DSS)[V] Tj[ C] VBR(DSS)=f(Tj);ID=1mA 1

11 6PackageOutlines 1) partially covered with Mold Flash DIM MILLIMETERS INCHES MIN MAX MIN MAX A b b b c D D2 E E1 E4 E5 e H H (BSC).47 (BSC) H H H N 8 8 K L L L L DOCUMENT NO. Z8B SCALE 2 2 4mm EUROPEAN PROJECTION ISSUE DATE REVISION 2 Figure1OutlinePGHSOF81 11

12 RevisionHistory Revision:215223,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) Release of final version Correction of SOA area with Ipulse = 12A WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany 215InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice( Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 12

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