MOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS E6600V 600VCoolMOS E6PowerTransistor IPx60R280E6. DataSheet. PowerManagement&Multimarket

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1 MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS E6600V 600VCoolMOS E6PowerTransistor DataSheet Rev.2.2 Final PowerManagement&Multimarket

2 IPP60R280E6, IPA60R280E6 IPW60R280E6 1 Description CoolMOS" is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS" E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features Extremely low losses due to very low FOM Rdson*Qg and Eoss Very high commutation ruggedness Easy to use/drive JEDEC 1) qualified, Pb-free plating, Halogen free Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. gate pin 1 drain pin 2 source pin 3 Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T j,max 650 V R DS(on),max 0.28! Q g,typ 43 nc I D,pulse 40 A E 400V 3.7 µj Body diode di/dt 500 A/µs Type / Ordering Code Package Marking Related Links IPW60R280E6 PG-TO247 IFX CoolMOS Webpage IPP60R280E6 PG-TO220 6R280E6 IFX Design tools IPA60R280E6 PG-TO220 FullPAK 1) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.2,

3 Table of Contents Table of Contents 1 Description Table of Contents Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Test circuits Package outlines Revision History Final Data Sheet 3 Rev. 2.2,

4 Maximum ratings 2 Maximum ratings at T j = 25 C, unless otherwise specified. Table 2 Maximum ratings Parameter Symbol Values Unit Note / Test Condition Continuous drain current 1) Pulsed drain current 2) 1) Limited by T j,max. Maximum duty cycle D=0.75 2) Pulse width t p limited by T j,max Min. Typ. Max. I D A T C = 25 C 8.7 T C = 100 C I D,pulse A T C =25 C Avalanche energy, single pulse E AS mj I D =2.4 A,V DD =50 V (see table 21) Avalanche energy, repetitive E AR I D =2.4 A,V DD =50 V Avalanche current, repetitive I AR A MOSFET dv/dt ruggedness dv/dt V/ns V DS = V Gate source voltage V GS V static Power dissipation for TO-220, TO-247, TO-262, TO-263 Power dissipation for TO-220 FullPAK AC (f>1 Hz) P tot W T C =25 C P tot Operating and storage temperature T j,t stg C Mounting torque TO-220, TO-247 Mounting torque TO-220 FullPAK Ncm M3 and M3.5 screws 50 M2.5 screws Continuous diode forward current I S A T C =25 C Diode pulse current 2) I S,pulse A T C =25 C Reverse diode dv/dt 3) 3) Identical low side and high side switch with identical R G dv/dt V/ns V DS = V,I SD " I D, T j =25 C Maximum diode commutation di f /dt 500 A/µs (see table 22) speed 3) Final Data Sheet 4 Rev. 2.2,

5 Thermal characteristics 3 Thermal characteristics Table 3 Thermal characteristics TO-220 (IPP60R280E6),TO-247 (IPW60R280E6) Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Thermal resistance, junction - case R thjc C/W Thermal resistance, junction - ambient Soldering temperature, wavesoldering only allowed at leads R thja leaded T sold C 1.6 mm (0.063 in.) from case for 10 s Table 4 Thermal characteristics TO-220FullPAK (IPA60R280E6) Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Thermal resistance, junction - case R thjc C/W Thermal resistance, junction - ambient Soldering temperature, wavesoldering only allowed at leads R thja leaded T sold C 1.6 mm (0.063 in.) from case for 10 s Final Data Sheet 5 Rev. 2.2,

6 Electrical characteristics 4 Electrical characteristics Electrical characteristics, at Tj=25 C, unless otherwise specified. Table 5 Static characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Drain-source breakdown voltage V (BR)DSS V V GS =0 V, I D =0.25 ma Gate threshold voltage V GS(th) V DS =V GS, I D =0.43 ma Zero gate voltage drain current I DSS µa V DS =600 V, V GS =0 V, T j =25 C V DS =600 V, V GS =0 V, T j =150 C Gate-source leakage current I GSS na V GS =20 V, V DS =0 V Drain-source on-state resistance R DS(on) ! V GS =10 V, I D =6.5 A, T j =25 C V GS =10 V, I D =6.5 A, T j =150 C Gate resistance R G - 7 -! f=1 MHz, open drain Table 6 Dynamic characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Input capacitance C iss pf V GS =0 V, V DS =100 V, Output capacitance C oss f=1 MHz Effective output capacitance, energy related 1) Effective output capacitance, time related 2) C o(er) V GS =0 V, V DS = V C o(tr) I D =constant, V GS =0 V V DS = V Turn-on delay time t d(on) ns V DD =400 V, Rise time t V GS =13 V, I D =6.5 A, r R G = 3.4! Turn-off delay time t d(off) (see table 20) Fall time t f - 9-1) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V (BR)DSS 2) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V (BR)DSS Final Data Sheet 6 Rev. 2.2,

7 Electrical characteristics Table 7 Gate charge characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Gate to source charge Q gs nc V DD =480 V, I D =6.5 A, Gate to drain charge Q gd V GS =0 to 10 V Gate charge total Q g Gate plateau voltage V plateau V Table 8 Reverse diode characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Diode forward voltage V SD V V GS =0 V, I F =6.5 A, T j =25 C Reverse recovery time t rr ns V R =400 V, I F =6.5 A, Reverse recovery charge Q di F /dt=100 A/µs rr µc (see table 22) Peak reverse recovery current I rrm A Final Data Sheet 7 Rev. 2.2,

8 5 Electrical characteristics diagrams Electrical characteristics diagrams Table 9 Power dissipation TO-220, TO-247, TO-262, TO-263 Power dissipation TO-220 FullPAK P tot = f(t C ) P tot = f(t C ) Table 10 Max. transient thermal impedance TO-220, TO-247, TO-262, TO-263 Max. transient thermal impedance TO-220 FullPAK Z (thjc) =f(tp); parameter: D=t p /T Z (thjc) =f(tp); parameter: D=t p /T Final Data Sheet 8 Rev. 2.2,

9 Electrical characteristics diagrams Table 11 Safe operating area T C =25 C TO-220, TO-247, TO-262, TO-263 Safe operating area T C =25 C TO-220 FullPAK I D =f(v DS ); T C =25 C; D=0; parameter t p Table 12 Safe operating area T C =80 C TO-220, TO-247, TO-262, TO-263 I D =f(v DS ); T C =25 C; D=0; parameter t p Safe operating area T C =80 C TO-220 FullPAK I D =f(v DS ); T C =80 C; D=0; parameter t p I D =f(v DS ); T C =80 C; D=0; parameter t p Final Data Sheet 9 Rev. 2.2,

10 Table 13 Electrical characteristics diagrams Typ. output characteristics T C =25 C Typ. output characteristics T j =125 C I D =f(v DS ); T j =25 C; parameter: V GS Table 14 Typ. drain-source on-state resistance I D =f(v DS ); T j =125 C; parameter: V GS Drain-source on-state resistance R DS(on) =f(i D ); T j =125 C; parameter: V GS R DS(on) =f(t j ); I D =6.5 A; V GS =10 V Final Data Sheet 10 Rev. 2.2,

11 Electrical characteristics diagrams Table 15 Typ. transfer characteristics Typ. gate charge I D =f(v GS ); V DS =20V Table 16 Avalanche energy V GS =f(q gate ), I D =6.5A pulsed Drain-source breakdown voltage E AS =f(t j ); I D =2.4 A; V DD =50 V V BR(DSS) =f(t j ); I D =0.25 ma Final Data Sheet 11 Rev. 2.2,

12 Electrical characteristics diagrams Table 17 Typ. capacitances Typ. C oss stored energy C=f(V DS ); V GS =0 V; f=1 MHz E OSS =f(v DS ) Table 18 Forward characteristics of reverse diode I F =f(v SD ); parameter: T j Final Data Sheet 12 Rev. 2.2,

13 Test circuits 6 Test circuits Table 19 Switching times test circuit and waveform for inductive load Switching times test circuit for inductive load Switching time waveform V DS 90% V DS V GS V GS 10% t d(on) t r t d(off) t f t on t off Table 20 Unclamped inductive load test circuit and waveform Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D V DS V D V DS V DS I D Table 21 Test circuit and waveform for diode characteristics Test circuit for diode characteristics Diode recovery waveform R G1 I D # /# #/ $ ) $ 00 ( $. " $ )! 00 (!. "! ) $ 00 V DS ) $. $ ) R G2 --,!.! ) /# 00 #/ $ %$! --, $ " --, '$! --, R G1 = R G2.*+$$$&& Final Data Sheet 13 Rev. 2.2,

14 Package outlines 7 Package outlines Figure 1 Outlines TO-247, dimensions in mm/inches Final Data Sheet 14 Rev. 2.2,

15 Package outlines Figure 2 Outlines TO-220, dimensions in mm/inches Final Data Sheet 15 Rev. 2.2,

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17 600VCoolMOS E6PowerTransistor RevisionHistory Revision: ,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) Release final data sheet PG-TO220 FullPAK package outline update (creation: ) WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: Publishedby InfineonTechnologiesAG 81726München,Germany 2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice( Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 17 Rev.2.2,

18 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Infineon: IPA60R280E6 IPA60R280E6XKSA1