MOSFET MetalOxideSemiconductorFieldEffectTransistor. OptiMOS TM OptiMOS TM 5Power-Transistor,100V BSC098N10NS5. DataSheet. PowerManagement&Multimarket

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1 MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM DataSheet Rev.2. Final PowerManagement&Multimarket

2 1Description SuperSO8 Features OptimizedforhighperformanceSMPS,e.g.sync.rec. 1%avalanchetested Superiorthermalresistance Nchannel QualifiedaccordingtoJEDEC 1) fortargetapplications Pbfreeleadplating;RoHScompliant HalogenfreeaccordingtoIEC Table1KeyPerformanceParameters Parameter Value Unit VDS 1 V RDS(on),max 9.8 mω ID 6 A Qoss 3 nc QG(V..1V) 22 nc S 1 S 2 S 3 G 4 8 D 7 D 6 D 5 D Type/OrderingCode Package Marking RelatedLinks PGTDSON8 98N1NS 1) JSTD2 and JESD22 2

3 TableofContents Description Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Package Outlines Revision History Disclaimer

4 2Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current ID Pulsed drain current 2) ID,pulse 24 A TC=25 C A VGS=1V,TC=25 C VGS=1V,TC=1 C VGS=1V,TC=25 C,RthJA=5K/W 1) Avalanche energy, single pulse 3) EAS 3 mj ID=5A,RGS=25Ω Gate source voltage VGS 2 2 V Power dissipation Ptot Operating and storage temperature Tj,Tstg C W TC=25 C TA=25 C,RthJA=5K/W 2) IEC climatic category; DIN IEC 681: 55/15/56 3Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case, bottom Thermal resistance, junction case, top RthJC K/W RthJC 2 K/W Device on PCB, 6 cm 2 cooling area 1) RthJA 5 K/W 1) Device on 4 mm x 4 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 7 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information 4

5 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 1 V VGS=V,ID=1mA Gate threshold voltage VGS(th) V VDS=VGS,ID=36µA Zero gate voltage drain current IDSS µa VDS=1V,VGS=V,Tj=25 C VDS=1V,VGS=V,Tj=125 C Gatesource leakage current IGSS 1 1 na VGS=2V,VDS=V Drainsource onstate resistance RDS(on) Gate resistance 1) RG Ω mω VGS=1V,ID=3A VGS=6V,ID=15A Transconductance gfs S VDS >2 ID RDS(on)max,ID=3A Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance 1) Ciss pf VGS=V,VDS=5V,f=1MHz Output capacitance 1) Coss pf VGS=V,VDS=5V,f=1MHz Reverse transfer capacitance 1) Crss pf VGS=V,VDS=5V,f=1MHz Turnon delay time td(on) 1 ns Rise time tr 5 ns Turnoff delay time td(off) 17 ns Fall time tf 4 ns VDD=5V,VGS=1V,ID=3A, RG,ext=3Ω VDD=5V,VGS=1V,ID=3A, RG,ext=3Ω VDD=5V,VGS=1V,ID=3A, RG,ext=3Ω VDD=5V,VGS=1V,ID=3A, RG,ext=3Ω 1) Defined by design. Not subject to production test. 5

6 Table6Gatechargecharacteristics 1) Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Gate to source charge Qgs 7.4 nc VDD=5V,ID=3A,VGS=to1V Gate charge at threshold Qg(th) 4.4 nc VDD=5V,ID=3A,VGS=to1V Gate to drain charge 2) Qgd nc VDD=5V,ID=3A,VGS=to1V Switching charge Qsw 7.8 nc VDD=5V,ID=3A,VGS=to1V Gate charge total 2) Qg nc VDD=5V,ID=3A,VGS=to1V Gate plateau voltage Vplateau 4.8 V VDD=5V,ID=3A,VGS=to1V Gate charge total, sync. FET Qg(sync) 19 nc VDS=.1V,VGS=to1V Output charge 2) Qoss 3 4 nc VDD=5V,VGS=V Table7Reversediode Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Diode continuous forward current IS 63 A TC=25 C Diode pulse current IS,pulse 24 A TC=25 C Diode forward voltage VSD V VGS=V,IF=3A,Tj=25 C Reverse recovery time 2) trr ns VR=5V,IF=3A,diF/dt=1A/µs Reverse recovery charge 2) Qrr nc VR=5V,IF=3A,diF/dt=1A/µs 1) See Gate charge waveforms for parameter definition 2) Defined by design. Not subject to production test. 6

7 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 8 Diagram2:Draincurrent Ptot[W] 4 ID[A] TC[ C] Ptot=f(TC) TC[ C] ID=f(TC);VGS 1V Diagram3:Safeoperatingarea 1 3 Diagram4:Max.transientthermalimpedance µs 1 µs ID[A] µs 1 ms 1 ms DC ZthJC[K/W] single pulse VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp tp[s] ZthJC=f(tp);parameter:D=tp/T 7

8 Diagram5:Typ.outputcharacteristics 32 Diagram6:Typ.drainsourceonresistance V 7 V 15 5 V 5.5 V 6 V 7 V ID[A] V RDS(on)[mΩ] V V 4 5 V VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS ID[A] RDS(on)=f(ID);Tj=25 C;parameter:VGS Diagram7:Typ.transfercharacteristics 2 Diagram8:Typ.forwardtransconductance ID[A] gfs[s] C 25 C VGS[V] ID=f(VGS); VDS >2 ID RDS(on)max;parameter:Tj ID[A] gfs=f(id);tj=25 C 8

9 Diagram9:Drainsourceonstateresistance 2 Diagram1:Typ.gatethresholdvoltage µa RDS(on)[mΩ] 1 max typ VGS(th)[V] µa Tj[ C] RDS(on)=f(Tj);ID=3A;VGS=1V Tj[ C] VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances 1 4 Diagram12:Forwardcharacteristicsofreversediode C 15 C 25 C max 15 C max 1 3 Ciss 1 2 C[pF] 1 2 Coss IF[A] Crss VDS[V] C=f(VDS);VGS=V;f=1MHz VSD[V] IF=f(VSD);parameter:Tj 9

10 Diagram13:Avalanchecharacteristics 1 2 Diagram14:Typ.gatecharge 1 25 C 1 C V 6 IAV[A] 125 C VGS[V] 4 2 V 8 V tav[µs] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) 1 2 Qgate[nC] VGS=f(Qgate);ID=3Apulsed;parameter:VDD Diagram15:Drainsourcebreakdownvoltage 18 Gate charge waveforms VBR(DSS)[V] Tj[ C] VBR(DSS)=f(Tj);ID=1mA 1

11 6PackageOutlines Figure1OutlinePGTDSON8,dimensionsinmm 11

12 RevisionHistory Revision: ,Rev.2. Previous Revision Revision Date Subjects (major changes since last revision) Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: Publishedby InfineonTechnologiesAG 81726München,Germany 214InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice( Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 12