MOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS ThinkPAK8x8 650VCoolMOS E6PowerTransistor IPL65R660E6. DataSheet. Industrial&Multimarket

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1 MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS ThinkPAK8x8 DataSheet Rev.2.1 Final Industrial&Multimarket

2 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies.650vcoolmos E6series combinestheexperienceoftheleadingsjmosfetsupplierwithhigh classinnovation. TheresultingdevicesprovideallbenefitsofafastswitchingSJMOSFET whileofferinganextremelyfastandrobustbodydiode.thiscombination ofextremelylowswitching,commutationandconductionlossestogether withhighestrobustnessmakeespeciallyresonantswitchingapplications morereliable,moreefficient,lighterandcooler. ThinPAK8x8 ThinPAK ThinPAKisaanewleadlessSMDpackageforHVMOSFETs.Thenew packagehasaverysmallfootprintofonly64mm²(vs.150mm²forthe D²PAK)andaverylowprofilewithonly1mmheight(vs.4.4mmforthe D²PAK).Thesignificantlysmallerpackagesize,combinedwithbenchmark lowparasiticinductances,providesdesignerswithanewandeffectiveway todecreasesystemsolutionsizeinpower-densitydrivendesigns. Features Reducedboardspaceconsumption Increasedpowerdensity Shortcommutationloop Smoothswitchingwaveform easytouseproducts ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Pb-freeplating,Halogenfree QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andjesd22) Gate Pin 1 Driver Source Pin 2 Drain Pin 5 Power Source Pin 3,4 Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.pcsilverbox,adapter,lcdtv,lighting,server,telecom. Table1KeyPerformanceParameters Parameter Value Unit Tj max 700 V RDS(on),max 0.66 Ω Qg,typ 23 nc ID,pulse 16 A 400V 1.9 µj Body diode di/dt 500 A/µs Type/OrderingCode Package Marking RelatedLinks PG-VSON-4 65E6660 see Appendix A 2

3 TableofContents Description Table of Contents Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Test Circuits Package Outlines Appendix A Revision History Disclaimer

4 2Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID 7.0 A TC=25 C 4.4 TC=100 C Pulsed drain current 2) ID pulse 16 A TC=25 C Avalanche energy, single pulse EAS 142 mj ID=1.3A,VDD=50V (see table 10) Avalanche energy, repetitive EAR 0.21 mj ID=1.3A,VDD=50V Avalanche current, repetitive IAR 1.3 A MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS= V Gate source voltage VGS V static AC (f > 1 Hz) Operating and storage temperature Tj Tstg C Continuous diode forward current IS 6.0 A TC=25 C Diode pulse current IS pulse 16 A TC=25 C Reverse diode dv/dt 3) dv/dt 15 V/ns VDS= V,ISD ID, Tj=25 C Maximum diode commutation speed dif/dt 500 A/µs (see table 8) Power dissipation Ptot 63 W TC=25 C 1) Limited by Tj max. Maximum duty cycle D=0,75 2) Pulse width tp limited by Tj max 3) Identical low side and high side switch with identical RG 4

5 3Thermalcharacteristics Table3ThermalcharacteristicsThinPAK8x8 Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction - case RthJC 2 C/W Thermal resistance, junction - ambient 1) RthJA 65 C/W Soldering temperature, wave- & reflowsoldering allowed Tsold 260 C reflow MSL 3 45 SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6cm² cooling area 1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection. PCB is vertical without air stream cooling. 5

6 4Electricalcharacteristics attj=25 C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 650 V VGS=0V,ID=1mA Gate threshold voltage VGS(th) V VDS=VGS,ID=0.2mA Zero gate voltage drain current IDSS 1 µa VDS=650V,VGS=0V,Tj=25 C 10 VDS=650V,VGS=0V,Tj=150 C Gate-source leakage current IGSS 100 na VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) Ω VGS=10V,ID=2.1A,Tj=25 C VGS=10V,ID=2.1A,Tj=150 C Gate resistance RG 5 Ω f=1mhz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 440 pf VGS=0V,VDS=100V,f=1MHz Output capacitance Coss 30 pf Effective output capacitance, energy related 1) Co(er) 21 pf VGS=0V,VDS= V Effective output capacitance, time related 2) Co(tr) 88 pf ID=constant,VGS=0V, VDS= V Turn-on delay time td(on) 10 ns VDD=400V,VGS=13V,ID=3.2A, RG=6.8Ω Rise time tr 8 ns (see table 9) Turn-off delay time td(off) 64 ns Fall time tf 11 ns Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 2.75 nc VDD=480V,ID=3.2A, VGS=0to10V Gate to drain charge Qgd 12 nc Gate charge total Qg 23 nc Gate plateau voltage Vplateau 5.5 V 1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS 2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS 6

7 Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD 0.9 V VGS=0V,IF=3.2A,Tj=25 C Reverse recovery time trr 270 ns VR=400V,IF=3.2A, dif/dt=100a/µs Reverse recovery charge Qrr 2 µc (see table 8) Peak reverse recovery current Irrm 13 A 7

8 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 70 Diagram2:Safeoperatingarea µs 10 µs 100 µs Ptot[W] ID[A] ms 10 ms DC TC[ C] Ptot=f(TC) VDS[V] ID=f(VDS);TC=25 C;D=0;parameter:tp Diagram3:Safeoperatingarea 10 2 Diagram4:Max.transientthermalimpedance µs 10 µs 100 µs ID[A] ms 10 ms ZthJC[K/W] DC single pulse VDS[V] ID=f(VDS);TC=80 C;D=0;parameter:tp tp[s] ZthJC=f(tP);parameter:D=tp/T 8

9 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics V 10 V 8 V 9 20 V 10 V 8 V 7 V ID[A] 10 7 V ID[A] 6 6 V 6 V V 5 V 4.5 V VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS 5.5 V 3 5 V 4.5 V VDS[V] ID=f(VDS);Tj=125 C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance RDS(on)[Ω] V V 6 V 6.5 V 7 V 20 V ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS Diagram8:Drain-sourceon-stateresistance RDS(on)[Ω] % Tj[ C] RDS(on)=f(Tj);ID=2.1A;VGS=10V typ 9

10 Diagram9:Typ.transfercharacteristics C Diagram10:Typ.gatecharge V 480 V ID[A] C VGS[V] VGS[V] ID=f(VGS);VDS=20V;parameter:Tj Qgate[nC] VGS=f(Qgate);ID=3.2Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode 10 2 Diagram12:Avalancheenergy IF[A] 125 C 25 C EAS[mJ] VSD[V] IF=f(VSD);parameter:Tj Tj[ C] EAS=f(Tj);ID=1.2A;VDD=50V 10

11 Diagram13:Drain-sourcebreakdownvoltage 760 Diagram14:Typ.capacitances Ciss VBR(DSS)[V] C[pF] 10 2 Coss Crss Tj[ C] VBR(DSS)=f(Tj);ID=1mA VDS[V] C=f(VDS);VGS=0V;f=1MHz Diagram15:Typ.Cossstoredenergy 3 2 Eoss[µJ] VDS[V] Eoss=f(VDS) 11

12 6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g 1 V,I (peak) R g 2 I F di F / dt t F t rr t S I F t I F R g 1 = R g 2 I rrm Q F Q S di rr / dt 10 %I rrm t rr =t F +t S Q rr = Q F +Q S Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform 90% V GS V GS 10% t d(on) t r t d(off) t f t on t off Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D V D I D 12

13 650V CoolMOS E6 Power Transistor 7 Package Outlines Figure 1 Outline PG-VSON-4, dimensions in mm/inches 13 Rev. 2.1,

14 650V CoolMOS E6 Power Transistor 8 Appendix A Table 11 Related Links IFX CoolMOS Webpage: IFX Design Tools: 14 Rev. 2.1,

15 650V CoolMOS E6 Power Transistor Revision History Revision: , Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) Release of final version Added in Features list: Qualified for industrial grade application We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG München, Germany 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 15 Rev. 2.1,

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