MOSFET MetalOxideSemiconductorFieldEffectTransistor. OptiMOS TM OptiMOS TM 5Power-MOSFET,25V BSC026NE2LS5. DataSheet. PowerManagement&Multimarket
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1 MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM DataSheet Rev.2. Final PowerManagement&Multimarket
2 1Description SuperSO8 Features Optimizedforhighperformancebuckconverters 1%avalanchetested Superiorthermalresistance Nchannel QualifiedaccordingtoJEDEC 1) fortargetapplications Pbfreeleadplating;RoHScompliant HalogenfreeaccordingtoIEC Table1KeyPerformanceParameters Parameter Value Unit VDS 25 V RDS(on),max 2.6 mω ID 82 A QOSS 7.6 nc QG(V..4.5V) 5.6 nc S 1 S 2 S 3 G 4 8 D 7 D 6 D 5 D Type/OrderingCode Package Marking RelatedLinks PGTDSON8 26NE2LS5 1) JSTD2 and JESD22 2
3 TableofContents Description Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Package Outlines Revision History Disclaimer
4 2Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current ID Pulsed drain current 2) ID,pulse 328 A TC=25 C Avalanche current, single pulse 3) IAS 35 A TC=25 C A VGS=1V,TC=25 C VGS=1V,TC=1 C VGS=4.5V,TC=25 C VGS=4.5V,TC=1 C VGS=1V,TA=25 C,RthJA=5K/W 1) Avalanche energy, single pulse EAS 14 mj ID=35A,RGS=25Ω Gate source voltage VGS V Power dissipation Ptot Operating and storage temperature Tj,Tstg C W TC=25 C TA=25 C,RthJA=5K/W 1) IEC climatic category; DIN IEC 681: 55/15/56 3Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 4.3 K/W Thermal resistance, junction case, top RthJC 2 K/W Device on PCB, 6 cm 2 cooling area 1) RthJA 5 K/W 1) Device on 4 mm x 4 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 7 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information 4
5 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 25 V VGS=V,ID=1mA Gate threshold voltage VGS(th) V VDS=VGS,ID=25µA Zero gate voltage drain current IDSS µa VDS=2V,VGS=V,Tj=25 C VDS=2V,VGS=V,Tj=125 C Gatesource leakage current IGSS 1 1 na VGS=16V,VDS=V Drainsource onstate resistance RDS(on) Gate resistance RG Ω mω VGS=4.5V,ID=3A VGS=1V,ID=3A Transconductance gfs S VDS >2 ID RDS(on)max,ID=3A Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance 1) Ciss pf VGS=V,VDS=12V,f=1MHz Output capacitance 1) Coss pf VGS=V,VDS=12V,f=1MHz Reverse transfer capacitance Crss 38 pf VGS=V,VDS=12V,f=1MHz Turnon delay time td(on) 3 ns Rise time tr 3 ns Turnoff delay time td(off) 13 ns Fall time tf 2 ns VDD=12V,VGS=1V,ID=3A, RG,ext=1.6Ω VDD=12V,VGS=1V,ID=3A, RG,ext=1.6Ω VDD=12V,VGS=1V,ID=3A, RG,ext=1.6Ω VDD=12V,VGS=1V,ID=3A, RG,ext=1.6Ω Table6Gatechargecharacteristics 2) Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 2. nc VDD=12V,ID=3A,VGS=to4.5V Gate charge at threshold Qg(th) 1.2 nc VDD=12V,ID=3A,VGS=to4.5V Gate to drain charge Qgd 1.4 nc VDD=12V,ID=3A,VGS=to4.5V Switching charge Qsw 2.2 nc VDD=12V,ID=3A,VGS=to4.5V Gate charge total Qg nc VDD=12V,ID=3A,VGS=to4.5V Gate plateau voltage Vplateau 2.6 V VDD=12V,ID=3A,VGS=to4.5V Gate charge total Qg nc VDD=12V,ID=3A,VGS=to1V Gate charge total, sync. FET Qg(sync) 4.8 nc VDS=.1V,VGS=to4.5V Output charge Qoss 7.6 nc VDD=12V,VGS=V 1) Defined by design. Not subject to production test 2) See Gate charge waveforms for parameter definition 5
6 Table7Reversediode Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Diode continuous forward current IS 29 A TC=25 C Diode pulse current IS,pulse 328 A TC=25 C Diode forward voltage VSD.84 1 V VGS=V,IF=3A,Tj=25 C Reverse recovery charge Qrr 7 nc VR=12V,IF=IS,diF/dt=4A/µs 6
7 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 35 Diagram2:Draincurrent Ptot[W] 2 15 ID[A] TC[ C] Ptot=f(TC) TC[ C] ID=f(TC);VGS 1V Diagram3:Safeoperatingarea 1 3 Diagram4:Max.transientthermalimpedance µs µs.5 1 µs 1.2 ID[A] 1 1 DC 1 ms 1 ms ZthJC[K/W] single pulse VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp tp[s] ZthJC=f(tp);parameter:D=tp/T 7
8 Diagram5:Typ.outputcharacteristics 32 Diagram6:Typ.drainsourceonresistance V 5 V 4.5 V 4 V 3.5 V V 3.5 V ID[A] V 3 V RDS(on)[mΩ] V 4.5 V 5 V 7 V 8 V 1 V 2.8 V VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS ID[A] RDS(on)=f(ID);Tj=25 C;parameter:VGS Diagram7:Typ.transfercharacteristics 32 Diagram8:Typ.forwardtransconductance ID[A] 16 gfs[s] C 25 C VGS[V] ID=f(VGS); VDS >2 ID RDS(on)max;parameter:Tj ID[A] gfs=f(id);tj=25 C 8
9 Diagram9:Drainsourceonstateresistance 5 Diagram1:Typ.gatethresholdvoltage RDS(on)[mΩ] 3 2 typ VGS(th)[V] µa Tj[ C] RDS(on)=f(Tj);ID=3A;VGS=1V Tj[ C] VGS(th)=f(Tj);VGS=VDS;ID=25µA Diagram11:Typ.capacitances 1 4 Diagram12:Forwardcharacteristicsofreversediode C 15 C 1 3 Ciss 1 2 C[pF] Coss IF[A] 1 2 Crss VDS[V] C=f(VDS);VGS=V;f=1MHz VSD[V] IF=f(VSD);parameter:Tj 9
10 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge V C 8 5 V 2 V IAV[A] 125 C 1 C VGS[V] tav[µs] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) Qgate[nC] VGS=f(Qgate);ID=3Apulsed;parameter:VDD Diagram15:Drainsourcebreakdownvoltage 28 Gate charge waveforms VBR(DSS)[V] Tj[ C] VBR(DSS)=f(Tj);ID=1mA 1
11 6PackageOutlines Figure1OutlinePGTDSON8,dimensionsinmm 11
12 OptiMOSTM5 PowerMOSFET, 25 V Dimension in mm Figure 2 Outline TDSON8 Tape 12 Rev. 2., 21531
13 OptiMOSTM5 PowerMOSFET, 25 V Revision History Revision: 21531, Rev. 2. Previous Revision Revision Date Subjects (major changes since last revision) Release of final version We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG München, Germany 215 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 13 Rev. 2., 21531
14 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Infineon: ATMA1
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