MOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS P6 600VCoolMOS P6PowerTransistor IPL60R650P6S. DataSheet. PowerManagement&Multimarket

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1 MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 DataSheet Rev.2.0 Final PowerManagement&Multimarket

2 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies.coolmos P6seriescombinesthe experienceoftheleadingsjmosfetsupplierwithhighclassinnovation. TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler. ThinPAK5x6 Features ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Veryhighcommutationruggedness Easytouse/drive Pbfreeplating,Halogenfreemoldcompound QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(JSTD20 andjesd22) Applications PFCstages,hardswitchingPWMstagesandresonantswitchingPWM stagesfore.g.pcsilverbox,adapter,lcd&pdptv,lighting,server, TelecomandUPS. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit Tj,max 650 V RDS(on),max 0.65 Ω Qg,typ 12 nc ID,pulse 16.5 A Eoss@400V 1.8 µj Body diode di/dt 500 A/µs Type/OrderingCode Package Marking RelatedLinks ThinPAK 5x6 SMD 60P6650 see Appendix A 2

3 TableofContents Description Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Test Circuits Package Outlines Appendix A Revision History Disclaimer

4 2Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID A TC = 25 C TC = 100 C Pulsed drain current 2) ID,pulse 16.5 A TC=25 C Avalanche energy, single pulse EAS 133 mj ID =1.3A; VDD = 50V Avalanche energy, repetitive EAR 0.20 mj ID =1.3A; VDD = 50V Avalanche current, repetitive IAR 1.3 A MOSFET dv/dt ruggedness dv/dt 100 V/ns VDS= V Gate source voltage VGS V static; AC (f>1 Hz) Power dissipation (non FullPAK) Ptot 56.8 W TC=25 C Operating and storage temperature Tj,Tstg C Continuous diode forward current IS 5.8 A TC=25 C Diode pulse current 2) IS,pulse 16.2 A TC = 25 C Reverse diode dv/dt 3) dv/dt 15 V/ns VDS= V,ISD<=IS,Tj=25 C Maximum diode commutation speed 3) dif/dt 500 A/µs VDS= V,ISD<=IS,Tj=25 C 3Thermalcharacteristics Table3Thermalcharacteristics(nonFullPAK) Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 2.2 C/W Thermal resistance, junction ambient RthJA C/W Soldering temperature, wavesoldering only allowed at leads Tsold 260 C reflow MSL1 Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm 2 (one layer 70µm thick) copper area for drain connection and cooling. PCB is vertical without blown air. 1) Limited by Tj max. Maximum duty cycle D=0.75 2) Pulse width tp limited by Tj,max 3) VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG 4

5 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 600 V VGS=0V,ID=1mA Gate threshold voltage V(GS)th V VDS=VGS,ID=0.2mA Zero gate voltage drain current IDSS 10 1 µa VDS=600V,VGS=0V,Tj=25 C VDS=600V,VGS=0V,Tj=150 C Gatesource leakage curent IGSS 100 na VGS=20V,VDS=0V Drainsource onstate resistance RDS(on) Ω VGS=10V,ID=2.4A,Tj=25 C VGS=10V,ID=2.4A,Tj=150 C Gate resistance RG 11 Ω f=1mhz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 557 pf VGS=0V,VDS=100V,f=1MHz Output capacitance Coss 28 pf VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related 1) Co(er) 23 pf VGS=0V,VDS= V Effective output capacitance, time related 2) Co(tr) 88 pf ID=constant,VGS=0V,VDS= V Turnon delay time td(on) 11 ns Rise time tr 7 ns Turnoff delay time td(off) 33 ns Fall time tf 14 ns VDD=400V,VGS=13V,ID=3A, RG=6.8Ω VDD=400V,VGS=13V,ID=3A, RG=6.8Ω VDD=400V,VGS=13V,ID=3A, RG=6.8Ω VDD=400V,VGS=13V,ID=3A, RG=6.8Ω Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 3 nc VDD=480V,ID=3A,VGS=0to10V Gate to drain charge Qgd 5 nc VDD=480V,ID=3A,VGS=0to10V Gate charge total Qg 12 nc VDD=480V,ID=3A,VGS=0to10V Gate plateau voltage Vplateau 6.1 V VDD=480V,ID=3A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%V(BR)DSS 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%V(BR)DSS 5

6 Table7Reversediodecharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Diode forward voltage VSD 0.9 V VGS=0V,IF=3A,Tf=25 C Reverse recovery time trr 196 ns VR=400V,IF=3A,diF/dt=100A/µs Reverse recovery charge Qrr 1.7 µc VR=400V,IF=3A,diF/dt=100A/µs Peak reverse recovery current Irrm 17 A VR=400V,IF=3A,diF/dt=100A/µs 6

7 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 60 Diagram2:Safeoperatingarea µs µs 10 0 Ptot[W] 30 ID[A] 100 µs ms ms DC TC[ C] Ptot=f(TC) VDS[V] ID=f(VDS);TC=25 C;D=0;parameter:tp Diagram3:Safeoperatingarea 10 2 Diagram4:Max.transientthermalimpedance µs µs 10 0 ID[A] µs ZthJC[K/W] ms single pulse ms DC VDS[V] ID=f(VDS);TC=80 C;D=0;parameter:tp tp[s] ZthJC=f(tP);parameter:D=tp/T 7

8 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics V 10 V V 10 V 8 V 14 8 V 8 7 V 12 ID[A] 10 7 V ID[A] V V V V V 5 V VDS[V] 5 V 4.5 V VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS ID=f(VDS);Tj=125 C;parameter:VGS Diagram7:Typ.drainsourceonstateresistance 5 Diagram8:Drainsourceonstateresistance V 6 V 6.5 V 7 V RDS(on)[Ω] 3 10 V 20 V RDS(on)[Ω] % typ ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS Tj[ C] RDS(on)=f(Tj);ID=3A;VGS=10V 8

9 Diagram9:Typ.transfercharacteristics 18 Diagram10:Typ.gatecharge C V 480 V ID[A] C VGS[V] VGS[V] ID=f(VGS);VDS=20V;parameter:Tj Qgate[nC] VGS=f(Qgate);ID=3Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode 10 2 Diagram12:Avalancheenergy IF[A] 125 C 25 C EAS[mJ] VSD[V] IF=f(VSD);parameter:Tj Tj[ C] EAS=f(Tj);ID=1.3A;VDD=50V 9

10 Diagram13:Drainsourcebreakdownvoltage 700 Diagram14:Typ.capacitances Ciss VBR(DSS)[V] C[pF] 10 2 Coss Crss Tj[ C] VBR(DSS)=f(Tj);ID=1mA VDS[V] C=f(VDS);VGS=0V;f=1MHz Diagram15:Typ.Cossstoredenergy Eoss[µJ] VDS[V] Eoss=f(VDS) 10

11 6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g 1 V,I (peak) R g 2 I F di F / dt t F t rr t S I F t I F R g 1 = R g 2 I rrm Q F Q S di rr / dt 10 %I rrm t rr =t F +t S Q rr = Q F +Q S Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform 90% V GS V GS 10% t d(on) t r t d(off) t f t on t off Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D I D 11

12 7PackageOutlines DOCUMENT NO. Z8B DIM MILLIMETERS INCHES MIN MAX MIN MAX A b b c D D E E E e 1.27 (BSC) 0.05 (BSC) K1 K L L N 8 8 SCALE mm EUROPEAN PROJECTION ISSUE DATE REVISION 01 Figure1OutlineThinPAK5x6SMD,dimensionsinmm/inches 12

13 8AppendixA Table11RelatedLinks IFXCoolMOSWebpage: IFXDesigntools: 13

14 RevisionHistory Revision: ,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: Publishedby InfineonTechnologiesAG 81726München,Germany 2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice( Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 14

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