MOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS P6 600VCoolMOS P6PowerTransistor IPx60R230P6. DataSheet. PowerManagement&Multimarket

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1 MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 6VCoolMOS P6PowerTransistor IPx6R23P6 DataSheet Rev.2.1 Final PowerManagement&Multimarket

2 6VCoolMOS P6PowerTransistor IPW6R23P6,IPP6R23P6,IPA6R23P6 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies.coolmos P6seriescombinesthe experienceoftheleadingsjmosfetsupplierwithhighclassinnovation. TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler. TO247 TO22 tab TO22FP Drain Pin 2, tab Features IncreasedMOSFETdv/dtruggedness ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Veryhighcommutationruggedness Easytouse/drive Pbfreeplating,Halogenfreemoldcompound QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(JSTD2 andjesd22) Gate Pin 1 Source Pin 3 Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.pcsilverbox,adapter,lcd&pdptv,lighting,server,telecom andups. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit Tj,max 6 V RDS(on),max 23 mω Qg.typ 31 nc ID,pulse 48 A Eoss@4V 4.2 µj Body diode di/dt A/µs Type/OrderingCode Package Marking RelatedLinks IPW6R23P6 PGTO 247 IPP6R23P6 PGTO 22 6R23P6 see Appendix A IPA6R23P6 PGTO 22 FullPAK 2 Rev.2.1,21312

3 6VCoolMOS P6PowerTransistor IPW6R23P6,IPP6R23P6,IPA6R23P6 TableofContents Description Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Test Circuits Package Outlines Appendix A Revision History Disclaimer Rev.2.1,21312

4 6VCoolMOS P6PowerTransistor IPW6R23P6,IPP6R23P6,IPA6R23P6 2Maximumratings attj=2 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID A TC=2 C TC= C Pulsed drain current 2) ID,pulse 48 A TC=2 C Avalanche energy, single pulse EAS 32 mj ID=2.9A; VDD=V; see table Avalanche energy, repetitive EAR.3 mj ID=2.9A; VDD=V; see table Avalanche current, repetitive IAR 2.9 A MOSFET dv/dt ruggedness dv/dt V/ns VDS=...4V Gate source voltage (static) VGS 2 2 V static; Gate source voltage (dynamic) VGS 3 3 V AC (f>1 Hz) Power dissipation (Non FullPAK) TO22, TO247 Power dissipation (FullPAK) TO22FP Ptot 126 W TC=2 C Ptot 33 W TC=2 C Storage temperature Tstg C Operating junction temperature Tj C Mounting torque (Non FullPAK) TO22, TO247 Mounting torque (FullPAK) TO22FP 6 Ncm M3 and M3. screws Ncm M2. screws Continuous diode forward current IS 14. A TC=2 C Diode pulse current 2) IS,pulse 48 A TC=2 C Reverse diode dv/dt 3) dv/dt 1 V/ns VDS=...4V,ISD<=IS,Tj=2 C see table 8 Maximum diode commutation speed dif/dt A/µs VDS=...4V,ISD<=IS,Tj=2 C see table 8 Insulation withstand voltage for TO22FP VISO 2 V Vrms,TC=2 C,t=1min 1) Limited by Tj max. Maximum duty cycle D=.7 2) Pulse width tp limited by Tj,max 3) IdenticallowsideandhighsideswitchwithidenticalRG 4 Rev.2.1,21312

5 6VCoolMOS P6PowerTransistor IPW6R23P6,IPP6R23P6,IPA6R23P6 3Thermalcharacteristics Table3Thermalcharacteristics(NonFullPAK)TO22,TO247 Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC.99 C/W Thermal resistance, junction ambient RthJA 62 C/W leaded Soldering temperature, wavesoldering only allowed at leads Tsold 26 C 1.6mm (.63 in.) from case for s Table4Thermalcharacteristics(FullPAK)TO22FP Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 3.8 C/W Thermal resistance, junction ambient RthJA 8 C/W leaded Soldering temperature, wavesoldering only allowed at leads Tsold 26 C 1.6mm (.63 in.) from case for s Rev.2.1,21312

6 6VCoolMOS P6PowerTransistor IPW6R23P6,IPP6R23P6,IPA6R23P6 4Electricalcharacteristics attj=2 C,unlessotherwisespecified TableStaticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 6 V VGS=V,ID=1mA Gate threshold voltage V(GS)th V VDS=VGS,ID=.3mA Zero gate voltage drain current IDSS 1 µa VDS=6,VGS=V,Tj=2 C VDS=6,VGS=V,Tj= C Gatesource leakage current IGSS na VGS=2V,VDS=V Drainsource onstate resistance RDS(on) Ω VGS=V,ID=6.4A,Tj=2 C VGS=V,ID=6.4A,Tj= C Gate resistance RG 4.4 Ω f=1mhz,opendrain Table6Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 14 pf VGS=V,VDS=V,f=1MHz Output capacitance Coss 64 pf VGS=V,VDS=V,f=1MHz Effective output capacitance, energy related 1) Co(er) 2 pf VGS=V,VDS=...4V Effective output capacitance, time related 2) Co(tr) 22 pf ID=constant,VGS=V,VDS=...4V Turnon delay time td(on) 12 ns Rise time tr 7 ns Turnoff delay time td(off) 38 ns Fall time tf 6 ns VDD=4V,VGS=13V,ID=8A, RG=3.4Ω;seetable9 VDD=4V,VGS=13V,ID=8A, RG=3.4Ω;seetable9 VDD=4V,VGS=13V,ID=8A, RG=3.4Ω;seetable9 VDD=4V,VGS=13V,ID=8A, RG=3.4Ω;seetable9 Table7Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 9 nc VDD=4V,ID=8A,VGS=toV Gate to drain charge Qgd 11 nc VDD=4V,ID=8A,VGS=toV Gate charge total Qg 31 nc VDD=4V,ID=8A,VGS=toV Gate plateau voltage Vplateau 6.1 V VDD=4V,ID=8A,VGS=toV 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfromto4V 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfromto4V 6 Rev.2.1,21312

7 6VCoolMOS P6PowerTransistor IPW6R23P6,IPP6R23P6,IPA6R23P6 Table8Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD.9 V VGS=V,IF=8A,Tj=2 C Reverse recovery time trr 282 ns Reverse recovery charge Qrr 3.4 µc Peak reverse recovery current Irrm 24 A VR=4V,IF=8A,diF/dt=A/µs; see table 8 VR=4V,IF=8A,diF/dt=A/µs; see table 8 VR=4V,IF=8A,diF/dt=A/µs; see table 8 7 Rev.2.1,21312

8 Electricalcharacteristicsdiagrams 6VCoolMOS P6PowerTransistor IPW6R23P6,IPP6R23P6,IPA6R23P6 Diagram1:Powerdissipation(NonFullPAK) 14 Diagram2:Powerdissipation(FullPAK) Ptot[W] 8 6 Ptot[W] TC[ C] Ptot=f(TC) TC[ C] Ptot=f(TC) Diagram3:Max.transientthermalimpedance(NonFullPAK) 1 Diagram4:Max.transientthermalimpedance(FullPAK) 1..2 ZthJC[K/W] ZthJC[K/W] single pulse single pulse tp[s] ZthJC=f(tP);parameter:D=tp/T tp[s] ZthJC=f(tP);parameter:D=tp/T 8 Rev.2.1,21312

9 6VCoolMOS P6PowerTransistor IPW6R23P6,IPP6R23P6,IPA6R23P6 Diagram:Safeoperatingarea(NonFullPAK) Diagram6:Safeoperatingarea(FullPAK) 2 1 µs µs 1 µs 1 ms ms 2 1 µs µs 1 1 ms ms µs ID[A] DC ID[A] 1 DC VDS[V] ID=f(VDS);TC=2 C;D=;parameter:tp VDS[V] ID=f(VDS);TC=2 C;D=;parameter:tp Diagram7:Safeoperatingarea(NonFullPAK) 2 Diagram8:Safeoperatingarea(FullPAK) µs µs µs 1 ms ms 1 1 µs µs µs 1 ms ms ID[A] DC ID[A] 1 DC VDS[V] ID=f(VDS);TC=8 C;D=;parameter:tp VDS[V] ID=f(VDS);TC=8 C;D=;parameter:tp 9 Rev.2.1,21312

10 6V CoolMOS P6 Power Transistor IPW6R23P6, IPP6R23P6, IPA6R23P6 Diagram 9: Typ. output characteristics Diagram : Typ. output characteristics 3 2 V 2 V V V 4 8V 2 4 8V 3 7V 2 ID [A] ID [A] 3 7V 2 1 6V 2 1. V 6V V. V V 4. V V VDS [V] 1 2 VDS [V] ID=f(VDS); Tj=2 C; parameter: VGS ID=f(VDS); Tj=12 C; parameter: VGS Diagram 11: Typ. drainsource onstate resistance Diagram 12: Drainsource onstate resistance V 6V 6. V 7V RDS(on) [Ω] RDS(on) [Ω] 1..9 V V.3 typ 98% ID [A] RDS(on)=f(ID); Tj=12 C; parameter: VGS 7 12 Tj [ C] RDS(on)=f(Tj); ID=6.4 A; VGS= V Rev. 2.1, 21312

11 6V CoolMOS P6 Power Transistor IPW6R23P6, IPP6R23P6, IPA6R23P6 Diagram 13: Typ. transfer characteristics Diagram 14: Typ. gate charge 2 C VGS [V] ID [A] 4 C V 2 12 V VGS [V] Qgate [nc] ID=f(VGS); VDS=2V; parameter: Tj VGS=f(Qgate); ID=8. A pulsed; parameter: VDD Diagram 1: Forward characteristics of reverse diode Diagram 16: Avalanche energy IF [A] 12 C EAS [mj] 2 2 C VSD [V] 12 Tj [ C] IF=f(VSD); parameter: Tj 7 EAS=f(Tj); ID=2.9 A; VDD= V 11 Rev. 2.1, 21312

12 6V CoolMOS P6 Power Transistor IPW6R23P6, IPP6R23P6, IPA6R23P6 Diagram 17: Drainsource breakdown voltage Diagram 18: Typ. capacitances Ciss C [pf] VBR(DSS) [V] Coss Crss Tj [ C] VDS [V] VBR(DSS)=f(Tj); ID=1 ma C=f(VDS); VGS= V; f=1 MHz Diagram 19: Typ. Coss stored energy 6 Eoss [µj] VDS [V] Eoss=f(VDS) 12 Rev. 2.1, 21312

13 6V CoolMOS P6 Power Transistor IPW6R23P6, IPP6R23P6, IPA6R23P6 6 Test Circuits Table 9 Diode characteristics Test circuit for diode characteristics Diode recovery waveform V,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tf ts dif / dt QF IF t dirr / dt trr =tf +ts Qrr = QF + QS Irrm Rg1 = Rg 2 IF %Irrm QS Table Switching times Switching times test circuit for inductive load Switching times waveform VDS 9% VDS VGS VGS % td(on) td(off) tr ton tf toff Table 11 Unclamped inductive load Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VD VDS VDS 13 ID VDS Rev. 2.1, 21312

14 6V CoolMOS P6 Power Transistor IPW6R23P6, IPP6R23P6, IPA6R23P6 7 Package Outlines Figure 1 Outline PGTO 247, dimensions in mm/inches 14 Rev. 2.1, 21312

15 6V CoolMOS P6 Power Transistor IPW6R23P6, IPP6R23P6, IPA6R23P6 Figure 2 Outline PGTO 22, dimensions in mm/inches 1 Rev. 2.1, 21312

16 6V CoolMOS P6 Power Transistor IPW6R23P6, IPP6R23P6, IPA6R23P6 Figure 3 Outline PGTO 22 FullPAK, dimensions in mm/inches 16 Rev. 2.1, 21312

17 6V CoolMOS P6 Power Transistor IPW6R23P6, IPP6R23P6, IPA6R23P6 8 Appendix A Table 12 Related Links IFX CoolMOSTM P6 Webpage: IFX CoolMOSTM P6 application note: IFX CoolMOSTM P6 simulation model: IFX Design tools: 17 Rev. 2.1, 21312

18 6V CoolMOS P6 Power Transistor IPW6R23P6, IPP6R23P6, IPA6R23P6 Revision History IPW6R23P6, IPP6R23P6, IPA6R23P6 Revision: 21312, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) Release of final version Release of multipackage datasheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Edition 2181 Published by Infineon Technologies AG München, Germany 211 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 18 Rev. 2.1, 21312