MOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS C7 600VCoolMOS C7PowerTransistor IPZ60R040C7. DataSheet. PowerManagement&Multimarket

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1 MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket

2 1Description CoolMOS C7isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies. PGTO VCoolMOS C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation. The600VC7isthefirsttechnologyeverwithRDS(on)*Abelow1Ohm*mm². Features Suitableforhardandsoftswitching(PFCandhighperformanceLLC) IncreasedMOSFETdv/dtruggednessto120V/ns IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg BestinclassRDS(on)/package Easytouse/drive Pbfreeplating,halogenfreemoldcompound QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(JSTD20 andjesd22) 4pinkelvinsourceconcept Gate Pin 4 Driver Source Pin 3 Drain Pin 1 Power Source Pin 2 Benefits IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe application Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency Enablinghighersystemefficiencybylowerswitchinglosses Increasedpowerdensitysolutionsduetosmallerpackages Suitableforapplicationssuchasserver,telecomandsolar Upto0.5%betterfullloadefficiency@100kHzcomparedtoconventional 3pinpackage Applications PFCstagesandPWMstages(TTF,LLC)forhighpower/performance SMPSe.g.Computing,Server,Telecom,UPSandSolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit Tj,max 650 V RDS(on),max 40 mω Qg.typ 107 nc ID,pulse 211 A Tj<150 C 73 Eoss@400V 12.6 µj Body diode di/dt 480 A/µs A Type/OrderingCode Package Marking RelatedLinks PGTO C7040 see Appendix A 2

3 TableofContents Description Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Test Circuits Package Outlines Appendix A Revision History Disclaimer

4 2Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID A TC=25 C TC=100 C Pulsed drain current 2) ID,pulse 211 A TC=25 C Avalanche energy, single pulse EAS 249 mj ID=7.4A; VDD=50V; see table 10 Avalanche energy, repetitive EAR 1.24 mj ID=7.4A; VDD=50V; see table 10 Avalanche current, single pulse IAS 7.4 A MOSFET dv/dt ruggedness dv/dt 120 V/ns VDS= V Gate source voltage (static) VGS V static; Gate source voltage (dynamic) VGS V AC (f>1 Hz) Power dissipation Ptot 227 W TC=25 C Storage temperature Tstg C Operating junction temperature Tj C Mounting torque 60 Ncm M3 and M3.5 screws Continuous diode forward current IS 50 A TC=25 C Diode pulse current 2) IS,pulse 211 A TC=25 C Reverse diode dv/dt 3) dv/dt 20 V/ns VDS= V,ISD<=11.4A,Tj=25 C see table 8 Maximum diode commutation speed dif/dt 480 A/µs VDS= V,ISD<=11.4A,Tj=25 C see table 8 Insulation withstand voltage VISO n.a. V Vrms,TC=25 C,t=1min 1) Limited by Tj max. 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch 4

5 3Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 0.55 C/W Thermal resistance, junction ambient RthJA 62 C/W leaded Thermal resistance, junction ambient for SMD version Soldering temperature, wavesoldering only allowed at leads RthJA C/W n.a. Tsold 260 C 1.6mm (0.063 in.) from case for 10s 5

6 4Electricalcharacteristics attj=25 C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 600 V VGS=0V,ID=1mA Gate threshold voltage V(GS)th V VDS=VGS,ID=1.24mA Zero gate voltage drain current IDSS 10 1 µa VDS=600,VGS=0V,Tj=25 C VDS=600,VGS=0V,Tj=150 C Gatesource leakage current IGSS 100 na VGS=20V,VDS=0V Drainsource onstate resistance RDS(on) Ω VGS=10V,ID=24.9A,Tj=25 C VGS=10V,ID=24.9A,Tj=150 C Gate resistance RG 0.77 Ω f=1mhz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 4340 pf VGS=0V,VDS=400V,f=250kHz Output capacitance Coss 85 pf VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related 1) Co(er) 158 pf VGS=0V,VDS= V Effective output capacitance, time related 2) Co(tr) 1640 pf ID=constant,VGS=0V,VDS= V Turnon delay time td(on) 18 ns Rise time tr 8 ns Turnoff delay time td(off) 81 ns Fall time tf 3.2 ns VDD=400V,VGS=13V,ID=24.9A, RG=3.3Ω;seetable9 VDD=400V,VGS=13V,ID=24.9A, RG=3.3Ω;seetable9 VDD=400V,VGS=13V,ID=24.9A, RG=3.3Ω;seetable9 VDD=400V,VGS=13V,ID=24.9A, RG=3.3Ω;seetable9 Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 22 nc VDD=400V,ID=24.9A,VGS=0to10V Gate to drain charge Qgd 36 nc VDD=400V,ID=24.9A,VGS=0to10V Gate charge total Qg 107 nc VDD=400V,ID=24.9A,VGS=0to10V Gate plateau voltage Vplateau 5.0 V VDD=400V,ID=24.9A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 6

7 Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD 0.9 V VGS=0V,IF=24.9A,Tj=25 C Reverse recovery time trr 460 ns Reverse recovery charge Qrr 9.2 µc Peak reverse recovery current Irrm 40 A VR=400V,IF=24.9A,diF/dt=100A/µs; see table 8 VR=400V,IF=24.9A,diF/dt=100A/µs; see table 8 VR=400V,IF=24.9A,diF/dt=100A/µs; see table 8 7

8 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 250 Diagram2:Safeoperatingarea µs 10 µs 100 µs ms 10 ms DC Ptot[W] ID[A] TC[ C] Ptot=f(TC) VDS[V] ID=f(VDS);TC=25 C;D=0;parameter:tp Diagram3:Safeoperatingarea 10 3 Diagram4:Max.transientthermalimpedance µs 1 ms 10 ms DC 10 µs 1 µs 0.5 ID[A] 10 0 ZthJC[K/W] VDS[V] ID=f(VDS);TC=80 C;D=0;parameter:tp 10 2 single pulse tp[s] ZthJC=f(tP);parameter:D=tp/T 8

9 Diagram5:Typ.outputcharacteristics 350 Diagram6:Typ.outputcharacteristics V 20 V 8 V 7 V V 10 V 8 V 7 V 6 V ID[A] V ID[A] V V 5 V 4.5 V VDS[V] 50 5 V 4.5 V VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS ID=f(VDS);Tj=125 C;parameter:VGS Diagram7:Typ.drainsourceonstateresistance V 6.5 V V 7 V 10 V Diagram8:Drainsourceonstateresistance RDS(on)[Ω] V RDS(on)[Ω] % typ ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS Tj[ C] RDS(on)=f(Tj);ID=24.9A;VGS=10V 9

10 Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge V C V ID[A] C VGS[V] VGS[V] ID=f(VGS);VDS=20V;parameter:Tj Qgate[nC] VGS=f(Qgate);ID=24.9Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode 10 2 Diagram12:Avalancheenergy C 25 C IF[A] EAS[mJ] VSD[V] IF=f(VSD);parameter:Tj Tj[ C] EAS=f(Tj);ID=7.4A;VDD=50V 10

11 Diagram13:Drainsourcebreakdownvoltage 700 Diagram14:Typ.capacitances Ciss 640 VBR(DSS)[V] C[pF] Coss Crss Tj[ C] VBR(DSS)=f(Tj);ID=1mA VDS[V] C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy Eoss[µJ] VDS[V] Eoss=f(VDS) 11

12 6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g 1 V,I (peak) R g 2 I F di F / dt t F t rr t S I F t I F R g 1 = R g 2 I rrm Q F Q S di rr / dt 10 %I rrm t rr =t F +t S Q rr = Q F +Q S Table9switchingtimes(ss) Switching times test circuit for inductive load Switching times waveform 90% V GS V GS 10% t d(on) t r t d(off) t f t on t off Table10Unclampedinductiveload(ss) Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D I D 12

13 600V CoolMOS C7 Power Transistor 7 Package Outlines Figure 1 Outline PGTO Rev. 2.0,

14 600V CoolMOS C7 Power Transistor 8 Appendix A Table 11 Related Links IFX CoolMOSTM C7 Webpage: IFX CoolMOSTM C7 application note: IFX CoolMOSTM C7 simulation model: IFX Design tools: 14 Rev. 2.0,

15 600V CoolMOS C7 Power Transistor Revision History Revision: , Rev. 2.0 Previous Revision Revision Date Subjects (major changes since last revision) Release of final version We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG München, Germany 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 15 Rev. 2.0,