MOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS C7 650VCoolMOS C7PowerTransistor IPL65R230C7. DataSheet. PowerManagement&Multimarket
|
|
- Rosalia Kuipersё
- 4 jaren geleden
- Aantal bezoeken:
Transcriptie
1 MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 DataSheet Rev.2. Final PowerManagement&Multimarket
2 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies. ThinPAK8x8 CoolMOS C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation.Theproductportfolio providesallbenefitsoffastswitchingsuperjunctionmosfetsoffering betterefficiency,reducedgatecharge,easyimplementationand outstandingreliability. Features IncreasedMOSFETdv/dtruggedness BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg ThinPAKSMDPackagewithverylowparasiticinductancetoenablefast andreliableswitchingwithminimumofsizetoincreasepowerdensity Easytouse/driveduetodriversourcepinforbettercontrolofthegate. Pbfreeplating,halogenfreemoldcompound QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(JSTD2 andjesd22) Benefits Enablinghighersystemefficiencybylowerswitchinglosses Enablinghigherfrequency/increasedpowerdensitysolutions Systemcost/sizesavingsduetoreducedcoolingrequirements Highersystemreliabilityduetoloweroperatingtemperatures Applications PFCstagesandhardswitchingPWMstagesfore.g.Computing,Server, Telecom,UPSandSolar. Gate Pin 1 Driver Source Pin 2 Drain Pin 5 Power Source Pin 3,4 Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Tj,max 7 V RDS(on),max 23 mω Qg.typ 2 nc ID,pulse 41 A Eoss@4V 2.3 µj Body diode di/dt 55 A/µs Type/OrderingCode Package Marking RelatedLinks PGVSON4 65C723 see Appendix A 2
3 TableofContents Description Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Test Circuits Package Outlines Appendix A Revision History Disclaimer
4 2Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID 7 A TC=25 C TC= C Pulsed drain current 2) ID,pulse 41 A TC=25 C Avalanche energy, single pulse EAS 48 mj ID=4.8A; VDD=5V Avalanche energy, repetitive EAR.24 mj ID=4.8A; VDD=5V Avalanche current, single pulse IAS 4.8 A MOSFET dv/dt ruggedness dv/dt V/ns =...4V Gate source voltage (static) VGS 2 2 V static; Gate source voltage (dynamic) VGS 3 3 V AC (f>1 Hz) Power dissipation Ptot 67 W TC=25 C Storage temperature Tstg 4 15 C Operating junction temperature Tj 4 15 C Mounting torque n.a. Ncm Continuous diode forward current IS A TC=25 C Diode pulse current 2) IS,pulse 41 A TC=25 C Reverse diode dv/dt 3) dv/dt 1 V/ns =...4V,ISD<=IS,Tj=25 C Maximum diode commutation speed dif/dt 55 A/µs =...4V,ISD<=IS,Tj=25 C Insulation withstand voltage VISO n.a. V Vrms,TC=25 C,t=1min 1) Limited by Tj max. 2) Pulse width tp limited by Tj,max 3) IdenticallowsideandhighsideswitchwithidenticalRG 4
5 3Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 1.87 C/W Thermal resistance, junction ambient RthJA 62 C/W device on PCB, minimal footprint Thermal resistance, junction ambient for SMD version RthJA C/W Reflow soldering temperature Tsold 26 C reflow MSL3 Device on 4mm*4mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 7µm thickness) copper area for drain connection and cooling. PCB is vertical without air stream cooling. 5
6 4Electricalcharacteristics attj=25 C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 65 V VGS=V,ID=1mA Gate threshold voltage V(GS)th V =VGS,ID=.24mA Zero gate voltage drain current IDSS 1 µa =65,VGS=V,Tj=25 C =65,VGS=V,Tj=15 C Gatesource leakage current IGSS na VGS=2V,=V Drainsource onstate resistance RDS(on) Ω VGS=V,ID=2.4A,Tj=25 C VGS=V,ID=2.4A,Tj=15 C Gate resistance RG 1 Ω f=1mhz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 996 pf VGS=V,=4V,f=25kHz Output capacitance Coss 14 pf VGS=V,=4V,f=25kHz Effective output capacitance, energy related 1) Co(er) 29 pf VGS=V,=...4V Effective output capacitance, time related Co(tr) 313 pf ID=constant,VGS=V,=...4V 2) Turnon delay time td(on) 8 ns Rise time tr 5 ns Turnoff delay time td(off) 71 ns Fall time tf 22 ns VDD=4V,VGS=13V,ID=2.4A, RG=Ω VDD=4V,VGS=13V,ID=2.4A, RG=Ω VDD=4V,VGS=13V,ID=2.4A, RG=Ω VDD=4V,VGS=13V,ID=2.4A, RG=Ω Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 5 nc VDD=4V,ID=2.4A,VGS=toV Gate to drain charge Qgd 6 nc VDD=4V,ID=2.4A,VGS=toV Gate charge total Qg 2 nc VDD=4V,ID=2.4A,VGS=toV Gate plateau voltage Vplateau 5. V VDD=4V,ID=2.4A,VGS=toV 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileisrisingfromto4V 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileisrisingfromto4V 6
7 Table7Reversediodecharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Diode forward voltage VSD.8 V VGS=V,IF=2.4A,Tj=25 C Reverse recovery time trr 414 ns VR=4V,IF=A,diF/dt=55A/µs Reverse recovery charge Qrr 3.1 µc VR=4V,IF=A,diF/dt=55A/µs Peak reverse recovery current Irrm 13.6 A VR=4V,IF=A,diF/dt=55A/µs 7
8 5Electricalcharacteristicsdiagrams Table8 Diagram1:Powerdissipation Diagram2:Safeoperatingarea 2 µs 1 µs µs 1 ms ms 1 DC Ptot[W] 4 3 ID[A] TC[ C] Ptot=f(TC) [V] ID=f();TC=25 C;D=;parameter:tp Table9 Diagram3:Safeoperatingarea 2 µs µs 1 µs 1 1 ms ms Diagram4:Max.transientthermalimpedance 1 DC.5 ID[A] 1 ZthJC[K/W] single pulse [V] ID=f();TC=8 C;D=;parameter:tp tp[s] ZthJC=f(tP);parameter:D=tp/T 8
9 Table Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics V V 8 V 25 V 2 V 8 V 7 V 3 7 V 2 ID[A] 25 2 ID[A] 15 6 V 15 6 V 5.5 V 5.5 V 5 5 V 4.5 V [V] ID=f();Tj=25 C;parameter:VGS 5 V V [V] ID=f();Tj=125 C;parameter:VGS Table11 Diagram7:Typ.drainsourceonstateresistance V 6 V 7 V V 2 V V Diagram8:Drainsourceonstateresistance RDS(on)[Ω] RDS(on)[Ω] % typ ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS Tj[ C] RDS(on)=f(Tj);ID=2.4A;VGS=V 9
10 Table12 Diagram9:Typ.transfercharacteristics Diagram:Typ.gatecharge C 12 V 4 V 3 8 ID[A] C VGS[V] VGS[V] ID=f(VGS);=2V;parameter:Tj Qgate[nC] VGS=f(Qgate);ID=2.4Apulsed;parameter:VDD Table13 Diagram11:Forwardcharacteristicsofreversediode 2 Diagram12:Avalancheenergy IF[A] 125 C 25 C EAS[mJ] VSD[V] IF=f(VSD);parameter:Tj Tj[ C] EAS=f(Tj);ID=4.8A;VDD=5V
11 65V CoolMOS C7 Power Transistor Table 14 Diagram 13: Drainsource breakdown voltage Diagram 14: Typ. capacitances Ciss C [pf] VBR(DSS) [V] Coss Crss Tj [ C] [V] VBR(DSS)=f(Tj); ID=1mA C=f(); VGS= V; f=25 khz Table 15 Diagram 15: Typ. Coss stored energy Eoss [µj] [V] Eoss=f() 11 Rev. 2.,
12 65V CoolMOS C7 Power Transistor 6 Test Circuits Table 16 Diode characteristics Test circuit for diode characteristics Diode recovery waveform V,I Rg1 ( peak) trr IF Rg 2 tf ts dif / dt QF IF t dirr / dt trr =tf +ts Qrr = QF + QS Irrm Rg1 = Rg 2 IF %Irrm QS Table 17 switching times (ss) Switching times test circuit for inductive load Switching times waveform 9% VGS VGS % td(on) td(off) tr ton tf toff Table 18 Unclamped inductive load (ss) Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VD 12 ID Rev. 2.,
13 65V CoolMOS C7 Power Transistor 7 Package Outlines Figure 1 Outline PGVSON4, dimensions in mm/inches 13 Rev. 2.,
14 65V CoolMOS C7 Power Transistor 8 Appendix A Table 19 Related Links IFX CoolMOSTM C7 Webpage: IFX CoolMOSTM C7 application note: IFX CoolMOSTM C7 simulation model: IFX Design tools: 14 Rev. 2.,
15 65V CoolMOS C7 Power Transistor Revision History Revision: , Rev. 2. Previous Revision Revision Date Subjects (major changes since last revision) Release of final version We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Edition 2181 Published by Infineon Technologies AG München, Germany 211 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 15 Rev. 2.,
MOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS C7 650VCoolMOS C7PowerTransistor IPZ65R045C7. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 DataSheet Rev.2. Final PowerManagement&Multimarket 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS C7 650VCoolMOS C7PowerTransistor IPB65R190C7. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 DataSheet Rev.2.1 Final PowerManagement&Multimarket 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS C7 650VCoolMOS C7PowerTransistor IPL65R070C7. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS C7 650VCoolMOS C7PowerTransistor IPP65R125C7. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS P6 600VCoolMOS P6PowerTransistor IPA60R280P6. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 DataSheet Rev.2.0 Final PowerManagement&Multimarket 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS C7 650VCoolMOS C7PowerTransistor IPL65R230C7. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS C7 650VCoolMOS C7PowerTransistor IPZ65R065C7. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 DataSheet Rev.2.1 Final PowerManagement&Multimarket 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS C7 650VCoolMOS C7PowerTransistor IPD65R190C7. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 DataSheet Rev.2.1 Final PowerManagement&Multimarket 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS E6 650VCoolMOS E6PowerTransistor lps65r600e6. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS E6 lps65r600e6 DataSheet Rev.2.0 Final PowerManagement&Multimarket 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS C7 600VCoolMOS C7PowerTransistor IPW60R099C7. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 1Description CoolMOS C7isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS C7 600VCoolMOS C7PowerTransistor IPZ60R040C7. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 1Description CoolMOS C7isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS CE 800VCoolMOS CEPowerTransistor IPx80R1K4CE. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE IPx8R1K4CE DataSheet Rev.2.1 Final PowerManagement&Multimarket IPD8R1K4CE,IPU8R1K4CE 1Description CoolMOS CEisarevolutionarytechnologyforhighvoltagepower
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS P6 600VCoolMOS P6PowerTransistor IPx60R230P6. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 6VCoolMOS P6PowerTransistor IPx6R23P6 DataSheet Rev.2.1 Final PowerManagement&Multimarket 6VCoolMOS P6PowerTransistor IPW6R23P6,IPP6R23P6,IPA6R23P6
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS CE 500VCoolMOS CEPowerTransistor IPX50R2K0CE. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE IPX5R2KCE DataSheet Rev.2.2 Final PowerManagement&Multimarket 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS CE 650VCoolMOS CEPowerTransistor IPS65R1K5CE. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE DataSheet Rev.2.0 Final PowerManagement&Multimarket 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS CE 500VCoolMOS CEPowerTransistor IPx50R500CE. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE IPx50R500CE DataSheet Rev.2.1 Final PowerManagement&Multimarket 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS CE 600VCoolMOS CEPowerTransistor IPx60R1K0CE. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE IPx60R1K0CE DataSheet Rev.2.0 Final PowerManagement&Multimarket 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS P6 600VCoolMOS P6PowerTransistor IPx60R099P6. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 IPx6R99P6 DataSheet Rev.2.1 Final PowerManagement&Multimarket 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS CFD2650VThinpak 650VCoolMOS CFD2PowerTransistor IPL65R460CFD.
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CFD2650VThinpak DataSheet Rev.2.0 Final Industrial&Multimarket 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS P6 600VCoolMOS P6PowerTransistor IPx60R230P6. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 IPx6R23P6 DataSheet Rev.2.2 Final PowerManagement&Multimarket IPW6R23P6,IPB6R23P6,IPP6R23P6, 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS CE 800VCoolMOS CEPowerTransistor IPA80R1K0CE. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE DataSheet Rev.2.1 Final PowerManagement&Multimarket 1Description CoolMOS CEisarevolutionarytechnologyforhighvoltagepower MOSFETs.Thehighvoltagecapabilitycombinessafetywithperformance
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS P6 600VCoolMOS P6PowerTransistor IPx60R380P6. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 6VCoolMOS P6PowerTransistor IPx6R38P6 DataSheet Rev.2.1 Final PowerManagement&Multimarket 6VCoolMOS P6PowerTransistor IPP6R38P6,IPA6R38P6,IPD6R38P6
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS CE 600VCoolMOS CEPowerTransistor IPx60R400CE. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE IPx6R4CE DataSheet Rev.2. Final PowerManagement&Multimarket 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS CE 500VCoolMOS CEPowerTransistor IPx50R1K4CE. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE 5VCoolMOS CEPowerTransistor IPx5R1K4CE DataSheet Rev.. Final PowerManagement&Multimarket 5VCoolMOS CEPowerTransistor IPD5R1K4CE,IPU5R1K4CE
Nadere informatie650VCoolMOS CFDAPowerTransistor IPB65R660CFDA,IPP65R660CFDA. 1Description
MOSFET MetalOxideSemiconductorFieldEffectTransistor CFDAAutomotive IPx65R66CFDA DataSheet Rev.2.1 Final Automotive 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS CE 500VCoolMOS CEPowerTransistor IPA50R950CE. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE DataSheet Rev.2.1 Final PowerManagement&Multimarket 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS ThinkPAK8x8 650VCoolMOS E6PowerTransistor IPL65R660E6. DataSheet. Industrial&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS ThinkPAK8x8 DataSheet Rev.2.1 Final Industrial&Multimarket 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS CFD2650VThinpak 650VCoolMOS CFD2PowerTransistor IPL65R165CFD.
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CFD2650VThinpak DataSheet Rev.2.0 Final Industrial&Multimarket 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS CE 500VCoolMOS CEPowerTransistor IPA50R190CE. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE DataSheet Rev.2.2 Final PowerManagement&Multimarket 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS P6 600VCoolMOS P6PowerTransistor IPL60R650P6S. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 DataSheet Rev.2.0 Final PowerManagement&Multimarket 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS CE 500VCoolMOS CEPowerTransistor IPD50R650CE. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE DataSheet Rev.2.2 Final PowerManagement&Multimarket 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS E6600V 600VCoolMOS E6PowerTransistor IPx60R190E6. DataSheet. Industrial&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS E6600V IPx60R190E6 DataSheet Rev.2.2 Final Industrial&Multimarket 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. OptiMOS TM OptiMOS ª 5Power-Transistor,100V IPP083N10N5. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM DataSheet Rev.2. Final PowerManagement&Multimarket 1Description Features Idealforhighfrequencyswitchingandsync.rec. ExcellentgatechargexRDS(on)product(FOM)
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. OptiMOS TM OptiMOS 5Power-Transistor,100V IPB017N10N5. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM OptiMOS 5PowerTransistor,1V DataSheet Rev.2.2 Final PowerManagement&Multimarket 1Description D²PAK7pin Features Idealforhighfrequencyswitchingandsync.rec.
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. OptiMOS TM OptiMOS TM 5Power-Transistor,100V BSZ097N10NS5. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM DataSheet Rev.2.1 Final PowerManagement&Multimarket 1Description Features Idealforhighfrequencyswitching OptimizedtechnologyforDC/DCconverters
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. OptiMOS TM OptiMOS TM Power-Transistor,60V BSZ042N06NS. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM DataSheet Rev.2.3 Final PowerManagement&Multimarket 1Description Features OptimizedforhighperformanceSMPS,e.g.sync.rec. 1%avalanchetested
Nadere informatieOptiMOSTM OptiMOSTMFD Power-Transistor, 250 V
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM DataSheet Rev.2. Final PowerManagement&Multimarket 1Description Features N-channel,normallevel FastDiode(FD)withreducedQrr Optimizedforhardcommutationruggedness
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. OptiMOS TM OptiMOS TM 5Power-MOSFET,25V BSC015NE2LS5I. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM DataSheet Rev.2.0 Final PowerManagement&Multimarket 1Description SuperSO8 Features Optimizedforhighperformancebuckconverters MonolithicintegratedSchottkylikediode
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. OptiMOS TM OptiMOS TM 5Power-MOSFET,30V BSZ0506NS. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM DataSheet Rev.2. Final PowerManagement&Multimarket 1Description Features Optimizedforhighperformancebuckconverters(Server,VGA) VerylowFOMQOSSforhighfrequencySMPS
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. OptiMOS TM OptiMOS TM 5Power-MOSFET,30V BSC0504NSI. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM DataSheet Rev.2. Final PowerManagement&Multimarket 1Description SuperSO8 Features Optimizedforhighperformancebuckconverters MonolithicintegratedSchottkylikediode
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. OptiMOS TM OptiMOS TM 5Power-MOSFET,25V BSC026NE2LS5. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM DataSheet Rev.2. Final PowerManagement&Multimarket 1Description SuperSO8 Features Optimizedforhighperformancebuckconverters VerylowonresistanceRDS(on)@VGS=4.5V
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. OptiMOS TM OptiMOS TM Power-Transistor,300V IPB407N30N. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM DataSheet Rev.2. Final PowerManagement&Multimarket 1Description D²PAK Features N-channel,normallevel FastDiodewithreducedQrr Optimizedforhardcommutationruggedness
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. OptiMOS TM OptiMOS TM 5Power-Transistor,100V BSC098N10NS5. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM DataSheet Rev.2. Final PowerManagement&Multimarket 1Description SuperSO8 Features OptimizedforhighperformanceSMPS,e.g.sync.rec. 1%avalanchetested
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. OptiMOS TM OptiMOS ª 5Power-Transistor,80V IPB024N08N5. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM DataSheet Rev.2. Final PowerManagement&Multimarket 1Description D²PAK Features Idealforhighfrequencyswitchingandsync.rec. ExcellentgatechargexRDS(on)product(FOM)
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. OptiMOS TM OptiMOS TM 5Power-Transistor,100V BSC035N10NS5. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM DataSheet Rev.. Final PowerManagement&Multimarket Description SuperSO8 Features OptimizedforhighperformanceSMPS,e.g.sync.rec. %avalanchetested
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. OptiMOS TM OptiMOS TM 5Power-Transistor,100V IPT015N10N5. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM DataSheet Rev.2.1 Final PowerManagement&Multimarket 1Description Features Idealforhighfrequencyswitchingandsync.rec. ExcellentgatechargexRDS(on)product(FOM)
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. OptiMOS Power-Transistor,120V OptiMOS 3Power-Transistor IPD_S110N12N3G.
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS Power-Transistor,12V OptiMOS 3Power-Transistor IPD_S11N12N3G DataSheet Rev.2.4 Final Industrial&Multimarket OptiMOS TM 3Power-Transistor Features
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS C6600V 600VCoolMOS C6PowerTransistor IPx60R190C6. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C6600V 600VCoolMOS C6PowerTransistor DataSheet Rev.2.2 Final PowerManagement&Multimarket 1 Description IPA60R190C6, IPB60R190C6 IPI60R190C6,
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS E6600V 600VCoolMOS E6PowerTransistor IPx60R600E6. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS E6600V 600VCoolMOS E6PowerTransistor DataSheet Rev.2.3 Final PowerManagement&Multimarket IPD60R600E6, IPP60R600E6 IPA60R600E6 1 Description CoolMOS"
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS C6600V 600VCoolMOS C6PowerTransistor IPx60R160C6. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C6600V 600VCoolMOS C6PowerTransistor DataSheet Rev.2.3 Final PowerManagement&Multimarket IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6 1 Description
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS C6600V 600VCoolMOS C6PowerTransistor IPx60R190C6. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C6600V 600VCoolMOS C6PowerTransistor DataSheet Rev.2.2 Final PowerManagement&Multimarket 1 Description IPA60R190C6, IPB60R190C6 IPI60R190C6,
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS E6600V 600VCoolMOS E6PowerTransistor IPx60R280E6. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS E6600V 600VCoolMOS E6PowerTransistor DataSheet Rev.2.2 Final PowerManagement&Multimarket IPP60R280E6, IPA60R280E6 IPW60R280E6 1 Description CoolMOS"
Nadere informatieMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS C6600V 600VCoolMOS C6PowerTransistor IPx60R950C6. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C6600V 600VCoolMOS C6PowerTransistor DataSheet Rev.2.2 Final PowerManagement&Multimarket IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 1
Nadere informatieliniled Cast Joint liniled Gietmof liniled Castjoint
liniled Cast Joint liniled Gietmof liniled is een hoogwaardige, flexibele LED strip. Deze flexibiliteit zorgt voor een zeer brede toepasbaarheid. liniled kan zowel binnen als buiten in functionele en decoratieve
Nadere informatieHet is geen open boek tentamen. Wel mag gebruik gemaakt worden van een A4- tje met eigen aantekeningen.
Examen ET1205-D1 Elektronische Circuits deel 1, 5 April 2011, 9-12 uur Het is geen open boek tentamen. Wel mag gebruik gemaakt worden van een A4- tje met eigen aantekeningen. Indien, bij het multiple choice
Nadere informatieliniled Marker Light Power Short Pitch
liniled Marker Light Power Short Pitch 2700K 3000K Natural White 4000K Cold White 6500K liniled Markeerlicht Power Short Pitch liniled Markeerlichten zijn uitermate geschikt om een route of locatie te
Nadere informatieQuick start guide. Powerbank MI Mah. Follow Fast All rights reserved. Page 1
Quick start guide Powerbank MI 16.000 Mah Follow Fast 2016 - All rights reserved. Page 1 ENGLISH The Mi 16000 Power Bank is a very good backup option for those on the move. It can keep you going for days
Nadere informatieI.S.T.C. Intelligent Saving Temperature Controler
MATEN & INFORMATIE I.S.T.C. Intelligent Saving Temperature Controler Deze unieke modulerende zender, als enige ter wereld, verlaagt het energieverbruik aanzienlijk. Het werkt in combinatie met de energy
Nadere informatieliniled Marker Light Deco
liniled Marker Light Deco Warm White 3000K Natural White 4000K Cold White 6500K RGB Red Green Blue Amber liniled Markeerlicht Deco liniled Markeerlichten zijn uitermate geschikt om een route of locatie
Nadere informatiePRESTATIEVERKLARING. DoP: voor fischer RM II (Lijm anker voor gebruik in beton) NL
PRESTATIEVERKLARING DoP: 0090 1. Unieke identificatiecode van het producttype: DoP: 0090 voor fischer RM II (Lijm anker voor gebruik in beton) NL 2. Beoogd(e) gebruik(en): Bevestiging achteraf in gescheurd
Nadere informatiePRESTATIEVERKLARING. Nr NL. 5. Het systeem of de systemen voor de beoordeling en verificatie van de prestatiebestendigheid: 2+
PRESTATIEVERKLARING Nr. 0055 NL 1. Unieke identificatiecode van het producttype: fischer termoz CN 8 2. Beoogd(e) gebruik(en): Product Kunststof verbindingen voor gebruik in beton en metselwerk Beoogd
Nadere informatieGroene industrie POWER QUALITY POWER AND SIGNAL QUALITY. Phoenix Contact B.V. 2015-2016
Groene industrie Phoenix Contact B.V. 2015-2016 POWER AND SIGNAL QUALITY POWER QUALITY 24V PWR ERR 24V 0V 0V OUT I GND GND GND ON OFF 1 2 1A 5A NC PACT RCP- Rogowskisp Eerst Power Quality inzichtelijk
Nadere informatieEE141- Spring 2004 Lecture 3 EE141. Last Lectures. Design Metrics
- Spring 2004 Lecture Design Metrics 1 Last Lectures Moore s law Challenges in digital IC design in the next decade. Manufacturing process Today Design metrics 2 1 Administrivia If you have not signed-in
Nadere informatiePRESTATIEVERKLARING. Nr NL
PRESTATIEVERKLARING Nr. 0072 NL 1. Unieke identificatiecode van het producttype: injectiesysteem fischer FIS V 2. Beoogd(e) gebruik(en): Product Lijm anker te gebruiken in beton Beoogd gebruik Voor bevestigen
Nadere informatieTilburg University. Technieken van kwalitatief onderzoek 1 Verhallen, T.M.M.; Vogel, H. Published in: Tijdschrift voor Marketing
Tilburg University Technieken van kwalitatief onderzoek 1 Verhallen, T.M.M.; Vogel, H. Published in: Tijdschrift voor Marketing Publication date: 1982 Link to publication Citation for published version
Nadere informatiePRESTATIEVERKLARING. Nr NL. 5. Het systeem of de systemen voor de beoordeling en verificatie van de prestatiebestendigheid: 1
PRESTATIEVERKLARING Nr. 0079 NL 1. Unieke identificatiecode van het producttype: fischer injectiesysteem fischer FIS EM 2. Beoogd(e) gebruik(en): Product Metalen ankers voor gebruik in beton (zware lasten)
Nadere informatiePRESTATIEVERKLARING. Nr NL
PRESTATIEVERKLARING Nr. 0100 NL 1. Unieke identificatiecode van het producttype: Injectiesysteem fischer Powerbond 2. Beoogd(e) gebruik(en): Product Lijm anker te gebruiken in beton Beoogd gebruik Voor
Nadere informatieHet voorspellen van de levensduur van LED verlichting met gebruik van omgevingstesten En enkele voorbeelden van faal mechanismen
Het voorspellen van de levensduur van LED verlichting met gebruik van omgevingstesten En enkele voorbeelden van faal mechanismen Boudewijn Jacobs Philips Lighting 3 december 2015 Toename in foutmodes Onze
Nadere informatiePRESTATIEVERKLARING. Nr NL. Bevestiging achteraf in gescheurd of ongescheurd beton, zie bijlage, in het bijzonder bijlages B 1 tot en met B 6
PRESTATIEVERKLARING Nr. 0020 NL 1. Unieke identificatiecode van het producttype: fischer High-Prestatie Anchor FH II, FH II-I 2. Beoogd(e) gebruik(en): Product Momentgecontroleerd spreidanker Beoogd gebruik
Nadere informatiePRESTATIEVERKLARING. DoP: 0094 voor injectiesysteem fischer FIS V (Lijm anker voor gebruik in beton) NL
PRESTATIEVERKLARING DoP: 0094 voor injectiesysteem fischer FIS V (Lijm anker voor gebruik in beton) NL 1. Unieke identificatiecode van het producttype: DoP: 0094 2. Beoogd(e) gebruik(en): Bevestiging achteraf
Nadere informatiePRESTATIEVERKLARING. Nr NL. 5. Het systeem of de systemen voor de beoordeling en verificatie van de prestatiebestendigheid: 1
PRESTATIEVERKLARING Nr. 0021 NL 1. Unieke identificatiecode van het producttype: Rebar connection with fischer injection mortar FIS EM 2. Beoogd(e) gebruik(en): Product Mortel voor achteraf aangebrachte
Nadere informatiePRESTATIEVERKLARING. Nr NL. 5. Het systeem of de systemen voor de beoordeling en verificatie van de prestatiebestendigheid: 2+
PRESTATIEVERKLARING Nr. 0031 NL 1. Unieke identificatiecode van het producttype: fischer nail anchor FNA II 2. Beoogd(e) gebruik(en): Product Metalen ankers voor gebruik in beton (lichte lasten) Beoogd
Nadere informatiePRESTATIEVERKLARING. Nr NL. 5. Het systeem of de systemen voor de beoordeling en verificatie van de prestatiebestendigheid: 2+
PRESTATIEVERKLARING Nr. 0057 NL 1. Unieke identificatiecode van het producttype: fischer termoz PN 8 2. Beoogd(e) gebruik(en): Product Kunststof verbindingen voor gebruik in beton en metselwerk Beoogd
Nadere informatieRemote sensor series
Remote sensor series DATASHEET Sensor Partners BV James Wattlaan 15 5151 DP Drunen The Netherlands +1 ()1-7 9 info@sensorpartners.com sensorpartners.com Sensor Partners BVBA Z.1 Researchpark 1 B-1, Zellik
Nadere informatiePRESTATIEVERKLARING. Nr NL. bijlages B 1 tot en met B 4
PRESTATIEVERKLARING Nr. 0069 NL 1. Unieke identificatiecode van het producttype: fischer Inslag anker EA II 2. Beoogd(e) gebruik(en): Product Metalen ankers voor gebruik in beton (zware lasten) Beoogd
Nadere informatieTilburg University. Dienstenkeurmerken misbruikt Roest, Henk; Verhallen, T.M.M. Published in: Tijdschrift voor Marketing. Publication date: 1999
Tilburg University Dienstenkeurmerken misbruikt Roest, Henk; Verhallen, T.M.M. Published in: Tijdschrift voor Marketing Publication date: 1999 Link to publication Citation for published version (APA):
Nadere informatieTilburg University. Huishoudelijk gedrag en stookgasverbruik van Raaij, Fred; Verhallen, T.M.M. Published in: Economisch Statistische Berichten
Tilburg University Huishoudelijk gedrag en stookgasverbruik van Raaij, Fred; Verhallen, T.M.M. Published in: Economisch Statistische Berichten Publication date: 1980 Link to publication Citation for published
Nadere informatiePRESTATIEVERKLARING. Nr NL. Bevestiging achteraf in gescheurd of ongescheurd beton, zie bijlage, in het bijzonder bijlages B 1 tot en met B 4
PRESTATIEVERKLARING Nr. 0081 NL 1. Unieke identificatiecode van het producttype: fischer Doorsteek anker FAZ II 2. Beoogd(e) gebruik(en): Product Momentgecontroleerd spreidanker Beoogd gebruik Bevestiging
Nadere informatieHet opschorten van de handel op de Amsterdamse Effectenbeurs Kabir, M.R.
Tilburg University Het opschorten van de handel op de Amsterdamse Effectenbeurs Kabir, M.R. Published in: Bedrijfskunde: Tijdschrift voor Modern Management Publication date: 1991 Link to publication Citation
Nadere informatieMarkt- en marketingonderzoek aan Nederlandse universiteiten Verhallen, T.M.M.; Kasper, J.D.P.
Tilburg University Markt- en marketingonderzoek aan Nederlandse universiteiten Verhallen, T.M.M.; Kasper, J.D.P. Published in: Tijdschrift voor Marketing Publication date: 1987 Link to publication Citation
Nadere informatiePRESTATIEVERKLARING. Nr NL
PRESTATIEVERKLARING Nr. 0085 NL 1. Unieke identificatiecode van het producttype: fischer Highbond-Anchor FHB 2. Beoogd(e) gebruik(en): Product Lijm anker te gebruiken in beton Beoogd gebruik Veiligheids
Nadere informatieTilburg University. Energiebesparing door gedragsverandering van Raaij, Fred; Verhallen, T.M.M. Published in: Psychologie. Publication date: 1982
Tilburg University Energiebesparing door gedragsverandering van Raaij, Fred; Verhallen, T.M.M. Published in: Psychologie Publication date: 1982 Link to publication Citation for published version (APA):
Nadere informatieAE1103 Statics. 25 January h h. Answer sheets. Last name and initials:
Space above not to be filled in by the student AE1103 Statics 09.00h - 12.00h Answer sheets Last name and initials: Student no.: Only hand in the answer sheets! Other sheets will not be accepted Write
Nadere informatie