MOSFET MetalOxideSemiconductorFieldEffectTransistor. OptiMOS Power-Transistor,120V OptiMOS 3Power-Transistor IPD_S110N12N3G.

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1 MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS Power-Transistor,12V OptiMOS 3Power-Transistor IPD_S11N12N3G DataSheet Rev.2.4 Final Industrial&Multimarket

2 OptiMOS TM 3Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 12 V R DS(on),max 11 mω I D 75 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC 1) for target application Halogen free according to IEC * Ideal for high-frequency switching and synchronous rectification Type Package PG-TO251-3 PG-TO252-3 Marking 11N12N 11N12N Maximum ratings, at T j =25 C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D T C =25 C 75 A T C =1 C 54 Pulsed drain current 2) I D,pulse T C =25 C 3 Avalanche energy, single pulse E AS I D =75 A, R GS =25 Ω 12 mj Gate source voltage 3) V GS ±2 V P tot T C =25 C 136 W Operating and storage temperature T j, T stg C IEC climatic category; DIN IEC /175/56 1) J-STD2 and JESD22 2) see figure 3 3) T jmax =15 C and duty cycle D=.1 for V gs <-5V * Except package TO251-3 Rev. 2.4 page

3 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thjc K/W Thermal resistance, junction - ambient R thja minimal footprint cm 2 cooling area 4) Electrical characteristics, at T j =25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS = V, I D =1 ma V Gate threshold voltage V GS(th) V DS =V GS, I D =83 µa Zero gate voltage drain current I DSS V DS =1 V, V GS = V, T j =25 C V DS =1 V, V GS = V, T j =125 C µa Gate-source leakage current I GSS V GS =2 V, V DS = V na Drain-source on-state resistance R DS(on) V GS =1 V, I D =75 A mω Gate resistance R G Ω Transconductance g fs V DS >2 I D R DS(on)max, I D =75 A S 4) Device on 4 mm x 4 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 7 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.4 page

4 Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics 6) Input capacitance C iss pf Output capacitance C oss V GS = V, V DS =6 V, f =1 MHz Reverse transfer capacitance C rss Turn-on delay time t d(on) ns Rise time t r V DD =6 V, V GS =1 V, Turn-off delay time t d(off) I D =75 A, R G,ext =1.6 Ω Fall time t f Gate Charge Characteristics 5) Gate to source charge Q gs nc Gate to drain charge Q gd Switching charge Q sw V DD =6 V, I D =75 A, V GS = to 1 V Gate charge total 6) Q g Gate plateau voltage V plateau V Output charge 6) Q oss V DD =6 V, V GS = V nc Reverse Diode Diode continous forward current I S T C =25 C A Diode pulse current I S,pulse Diode forward voltage V SD V GS = V, I F =75 A, T j =25 C V t rr V R =6 V, I F =I S, - 9 ns Reverse recovery charge Q rr di F /dt =1 A/µs nc 5) See figure 16 for gate charge parameter definition 6) Defined by design. Not subject to production test Rev. 2.4 page

5 1 Power dissipation 2 Drain current P tot =f(t C ) I D =f(t C ); V GS 1 V P tot [W] T C [ C] T C [ C] 3 Safe operating area 4 Max. transient thermal impedance I D =f(v DS ); T C =25 C; D = Z thjc =f(t p ) parameter: t p parameter: D =t p /T µs µs 1 µs DC 1 ms 1 ms Z thjc [K/W] single pulse V DS [V] t p [s] Rev. 2.4 page

6 5 Typ. output characteristics 6 Typ. drain-source on resistance I D =f(v DS ); T j =25 C R DS(on) =f(i D ); T j =25 C parameter: V GS parameter: V GS 25 1 V 8 V V 5 V 2 7 V V 6.5 V R DS(on) [mω] V 6 V 1 1 V V 5 5 V 4.5 V V DS [V] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D =f(v GS ); V DS >2 I D R DS(on)max g fs =f(i D ); T j =25 C parameter: T j g fs [S] C 5 25 C V GS [V] Rev. 2.4 page

7 9 Drain-source on-state resistance 1 Typ. gate threshold voltage R DS(on) =f(t j ); I D =75 A; V GS =1 V V GS(th) =f(t j ); V GS =V DS parameter: I D µa R DS(on) [mω] % typ V GS(th) [V] µa T j [ C] T j [ C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(v DS ); V GS = V; f =1 MHz I F =f(v SD ) parameter: T j Ciss 25 C C 175 C, 98% Coss C [pf] I F [A] 25 C, 98% Crss V DS [V] V SD [V] Rev. 2.4 page

8 13 Avalanche characteristics 14 Typ. gate charge I AS =f(t AV ); R GS =25 Ω parameter: T j(start) 1 3 V GS =f(q gate ); I D =67 A pulsed parameter: V DD V 96 V V 6 I AS [A] 25 C V GS [V] C 1 C t AV [µs] Q gate [nc] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS) =f(t j ); I D =1 ma 135 V GS 13 Q g 125 V BR(DSS) [V] V gs(th) 11 Q g(th) Q sw Q gate T j [ C] Q gs Q gd Rev. 2.4 page

9 PG-TO-251SL : Outline Rev. 2.4 page

10 PG-TO252-3: Outline Rev. 2.4 page

11 OptiMOS 3Power-Transistor IPD_S11N12N3G RevisionHistory IPD_S11N12N3 G Revision: ,Rev.2.4 Previous Revision Revision Date Subjects (major changes since last revision) Update VGS(th) and package outline TO252-3 WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany 215InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice( Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 11 Rev.2.4,