MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket
1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies. CoolMOS C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation.Theproductportfolio providesallbenefitsoffastswitchingsuperjunctionmosfetsoffering betterefficiency,reducedgatecharge,easyimplementationand outstandingreliability. TO220 tab Features IncreasedMOSFETdv/dtruggedness BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg BestinclassRDS(on)/package Easytouse/drive Pbfreeplating,halogenfreemoldcompound QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(JSTD20 andjesd22) Benefits Enablinghighersystemefficiency Enablinghigherfrequency/increasedpowerdensitysolutions Systemcost/sizesavingsduetoreducedcoolingrequirements Highersystemreliabilityduetoloweroperatingtemperatures Gate Pin 1 Drain Pin 2, tab Source Pin 3 Applications PFCstagesandhardswitchingPWMstagesfore.g.Computing,Server, Telecom,UPSandSolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit @ Tj,max 700 V RDS(on),max 125 mω Qg.typ 35 nc ID,pulse 75 A Eoss@400V 4.2 µj Body diode di/dt 55 A/µs Type/OrderingCode Package Marking RelatedLinks PGTO 220 65C7125 see Appendix A 2
TableofContents Description............................................................................. 2 Maximum ratings........................................................................ 4 Thermal characteristics.................................................................... 5 Electrical characteristics................................................................... 6 Electrical characteristics diagrams........................................................... 8 Test Circuits........................................................................... 12 Package Outlines....................................................................... 13 Appendix A............................................................................ 14 Revision History........................................................................ 15 Disclaimer............................................................................ 15 3
2Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID 18 12 A TC=25 C TC=0 C Pulsed drain current 2) ID,pulse 75 A TC=25 C Avalanche energy, single pulse EAS 89 mj ID=7.1A; VDD=50V; see table Avalanche energy, repetitive EAR 0.44 mj ID=7.1A; VDD=50V; see table Avalanche current, single pulse IAS 7.1 A MOSFET dv/dt ruggedness dv/dt 0 V/ns =0...400V Gate source voltage (static) VGS 20 20 V static; Gate source voltage (dynamic) VGS 30 30 V AC (f>1 Hz) Power dissipation Ptot 1 W TC=25 C Storage temperature Tstg 55 150 C Operating junction temperature Tj 55 150 C Mounting torque 60 Ncm M3 and M3.5 screws Continuous diode forward current IS 18 A TC=25 C Diode pulse current 2) IS,pulse 75 A TC=25 C Reverse diode dv/dt 3) dv/dt 1 V/ns =0...400V,ISD<=IS,Tj=25 C see table 8 Maximum diode commutation speed dif/dt 55 A/µs =0...400V,ISD<=IS,Tj=25 C see table 8 Insulation withstand voltage VISO n.a. V Vrms,TC=25 C,t=1min 1) Limited by Tj max. 2) Pulse width tp limited by Tj,max 3) IdenticallowsideandhighsideswitchwithidenticalRG 4
3Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 1.24 C/W Thermal resistance, junction ambient RthJA 62 C/W leaded Thermal resistance, junction ambient for SMD version Soldering temperature, wavesoldering only allowed at leads RthJA C/W n.a. Tsold 260 C 1.6mm (0.063 in.) from case for s 5
4Electricalcharacteristics attj=25 C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 650 V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 3 3.5 4 V =VGS,ID=0.44mA Zero gate voltage drain current IDSS 1 µa =650,VGS=0V,Tj=25 C =650,VGS=0V,Tj=150 C Gatesource leakage current IGSS 0 na VGS=20V,=0V Drainsource onstate resistance RDS(on) 0.111 0.265 0.125 Ω VGS=V,ID=8.9A,Tj=25 C VGS=V,ID=8.9A,Tj=150 C Gate resistance RG 1 Ω f=1mhz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 1670 pf VGS=0V,=400V,f=250kHz Output capacitance Coss 26 pf VGS=0V,=400V,f=250kHz Effective output capacitance, energy related 1) Co(er) 53 pf VGS=0V,=0...400V Effective output capacitance, time related Co(tr) 579 pf ID=constant,VGS=0V,=0...400V 2) Turnon delay time td(on) 14 ns Rise time tr 15 ns Turnoff delay time td(off) 71 ns Fall time tf 8 ns VDD=400V,VGS=13V,ID=8.9A, RG=Ω;seetable9 VDD=400V,VGS=13V,ID=8.9A, RG=Ω;seetable9 VDD=400V,VGS=13V,ID=8.9A, RG=Ω;seetable9 VDD=400V,VGS=13V,ID=8.9A, RG=Ω;seetable9 Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 8 nc VDD=400V,ID=8.9A,VGS=0toV Gate to drain charge Qgd 11 nc VDD=400V,ID=8.9A,VGS=0toV Gate charge total Qg 35 nc VDD=400V,ID=8.9A,VGS=0toV Gate plateau voltage Vplateau 5.4 V VDD=400V,ID=8.9A,VGS=0toV 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileisrisingfrom0to400V 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileisrisingfrom0to400V 6
Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD 0.9 V VGS=0V,IF=8.9A,Tj=25 C Reverse recovery time trr 800 ns Reverse recovery charge Qrr 7 µc Peak reverse recovery current Irrm 20 A VR=400V,IF=18A,diF/dt=55A/µs; see table 8 VR=400V,IF=18A,diF/dt=55A/µs; see table 8 VR=400V,IF=18A,diF/dt=55A/µs; see table 8 7
5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 1 0 90 80 Diagram2:Safeoperatingarea 2 0 µs µs 1 µs 1 1 ms ms DC Ptot[W] 70 60 50 40 ID[A] 0 1 30 20 2 0 0 25 50 75 0 125 150 TC[ C] Ptot=f(TC) 3 0 1 2 3 [V] ID=f();TC=25 C;D=0;parameter:tp Diagram3:Safeoperatingarea 2 µs 1 µs 0 µs 1 1 ms ms DC Diagram4:Max.transientthermalimpedance 1 ID[A] 0 1 2 ZthJC[K/W] 0 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 3 0 1 2 3 [V] ID=f();TC=80 C;D=0;parameter:tp 2 5 4 3 2 1 tp[s] ZthJC=f(tP);parameter:D=tp/T 8
Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 80 20 V 50 20 V 70 60 V 8 V 7 V 45 40 35 V 8 V 7 V 6 V 50 30 ID[A] 40 30 20 6 V 5.5 V 5 V 4.5 V 0 0 5 15 20 [V] ID[A] 25 20 5.5 V 15 5 V 5 4.5 V 0 0 5 15 20 [V] ID=f();Tj=25 C;parameter:VGS ID=f();Tj=125 C;parameter:VGS Diagram7:Typ.drainsourceonstateresistance 0.60 5.5 V 6 V 6.5 V 7 V 20 V 0.55 V 0.50 Diagram8:Drainsourceonstateresistance 0.30 0.25 0.45 0.20 RDS(on)[Ω] 0.40 0.35 RDS(on)[Ω] 0.15 98% typ 0.30 0. 0.25 0.20 0 20 30 40 50 60 ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS 0.05 50 25 0 25 50 75 0 125 150 Tj[ C] RDS(on)=f(Tj);ID=8.9A;VGS=V 9
Diagram9:Typ.transfercharacteristics Diagram:Typ.gatecharge 90 12 80 120 V 400 V 70 25 C 60 8 ID[A] 50 40 150 C VGS[V] 6 30 4 20 2 0 0 2 4 6 8 12 VGS[V] ID=f(VGS);=20V;parameter:Tj 0 0 20 30 40 50 Qgate[nC] VGS=f(Qgate);ID=8.9Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode 2 Diagram12:Avalancheenergy 90 80 70 1 125 C 25 C 60 IF[A] EAS[mJ] 50 40 0 30 20 1 0.0 0.5 1.0 1.5 VSD[V] IF=f(VSD);parameter:Tj 0 25 50 75 0 125 150 Tj[ C] EAS=f(Tj);ID=7.1A;VDD=50V
Diagram13:Drainsourcebreakdownvoltage 760 Diagram14:Typ.capacitances 5 740 720 4 700 Ciss VBR(DSS)[V] 680 660 640 C[pF] 3 2 Coss 620 1 600 Crss 580 60 20 20 60 0 140 180 Tj[ C] VBR(DSS)=f(Tj);ID=1mA 0 0 0 200 300 400 500 [V] C=f();VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy 6 5 4 Eoss[µJ] 3 2 1 0 0 0 200 300 400 500 [V] Eoss=f() 11
650V CoolMOS C7 Power Transistor 6 Test Circuits Table 8 Diode characteristics Test circuit for diode characteristics Diode recovery waveform V,I Rg1 ( peak) trr IF Rg 2 tf ts dif / dt QF IF t dirr / dt trr =tf +ts Qrr = QF + QS Irrm Rg1 = Rg 2 IF %Irrm QS Table 9 Switching times Switching times test circuit for inductive load Switching times waveform 90% VGS VGS % td(on) td(off) tr ton tf toff Table Unclamped inductive load Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VD 12 ID Rev. 2.0, 2013
650V CoolMOS C7 Power Transistor 7 Package Outlines Figure 1 Outline PGTO 220, dimensions in mm/inches 13 Rev. 2.0, 2013
650V CoolMOS C7 Power Transistor 8 Appendix A Table 11 Related Links IFX CoolMOSTM C7 Webpage: www.infineon.com IFX CoolMOSTM C7 application note: www.infineon.com IFX CoolMOSTM C7 simulation model: www.infineon.com IFX Design tools: www.infineon.com 14 Rev. 2.0, 2013
650V CoolMOS C7 Power Transistor Revision History Revision: 2013, Rev. 2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2013 Release of final version We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Edition 201801 Published by Infineon Technologies AG 81726 München, Germany 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 15 Rev. 2.0, 2013