MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 DataSheet Rev.2.1 Final PowerManagement&Multimarket
1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies. PGTO2474 CoolMOS C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation.Theproductportfolio providesallbenefitsoffastswitchingsuperjunctionmosfetsoffering betterefficiency,reducedgatecharge,easyimplementationand outstandingreliability. Features IncreasedMOSFETdv/dtruggedness BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg BestinclassRDS(on)/package Easytouse/driveduetodriversourcepinforbettercontrolofthegate. Pbfreeplating,halogenfreemoldcompound QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(JSTD2 andjesd22) Benefits Enablinghighersystemefficiency Enablinghigherfrequency/increasedpowerdensitysolutions Systemcost/sizesavingsduetoreducedcoolingrequirements Highersystemreliabilityduetoloweroperatingtemperatures Applications PFCstagesandhardswitchingPWMstagesfore.g.Computing,Server, Telecom,UPSandSolar. Pleasenote:Thesourceandsensesourcepinsarenotexchangeable. Theirexchangemightleadtomalfunction. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 7 V RDS(on),max 65 mω Qg.typ 64 nc ID,pulse 145 A Eoss@4V 8 µj Body diode di/dt 6 A/µs Type/OrderingCode Package Marking RelatedLinks PGTO 2474 65C765 see Appendix A 2
TableofContents Description............................................................................. 2 Maximum ratings........................................................................ 4 Thermal characteristics.................................................................... 5 Electrical characteristics................................................................... 6 Electrical characteristics diagrams........................................................... 8 Test Circuits........................................................................... 12 Package Outlines....................................................................... 13 Appendix A............................................................................ 14 Revision History........................................................................ 15 Disclaimer............................................................................ 15 3
2Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID 33 21 A TC=25 C TC= C Pulsed drain current 2) ID,pulse 145 A TC=25 C Avalanche energy, single pulse EAS 171 mj ID=1.2A; VDD=5V; see table 1 Avalanche energy, repetitive EAR.85 mj ID=1.2A; VDD=5V; see table 1 Avalanche current, single pulse IAS 1.2 A MOSFET dv/dt ruggedness dv/dt V/ns VDS=...4V Gate source voltage (static) VGS 2 2 V static; Gate source voltage (dynamic) VGS 3 3 V AC (f>1 Hz) Power dissipation Ptot 171 W TC=25 C Storage temperature Tstg 55 15 C Operating junction temperature Tj 55 15 C Mounting torque 6 Ncm M3 and M3.5 screws Continuous diode forward current IS 33 A TC=25 C Diode pulse current 2) IS,pulse 145 A TC=25 C Reverse diode dv/dt 3) dv/dt 1.5 V/ns VDS=...4V,ISD<=IS,Tj=25 C see table 8 Maximum diode commutation speed dif/dt 6 A/µs VDS=...4V,ISD<=IS,Tj=25 C see table 8 Insulation withstand voltage VISO n.a. V Vrms,TC=25 C,t=1min 1) Limited by Tj max. 2) Pulse width tp limited by Tj,max 3) IdenticallowsideandhighsideswitchwithidenticalRG 4
3Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC.73 C/W Thermal resistance, junction ambient RthJA 62 C/W leaded Thermal resistance, junction ambient for SMD version Soldering temperature, wavesoldering only allowed at leads RthJA C/W n.a. Tsold 26 C 1.6mm (.63 in.) from case for 1s 5
4Electricalcharacteristics attj=25 C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 65 V VGS=V,ID=1mA Gate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=.85mA Zero gate voltage drain current IDSS 15 1 µa VDS=65,VGS=V,Tj=25 C VDS=65,VGS=V,Tj=15 C Gatesource leakage current IGSS na VGS=2V,VDS=V Drainsource onstate resistance RDS(on).58.138.65 Ω VGS=1V,ID=17.1A,Tj=25 C VGS=1V,ID=17.1A,Tj=15 C Gate resistance RG.85 Ω f=1mhz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 32 pf VGS=V,VDS=4V,f=25kHz Output capacitance Coss 48 pf VGS=V,VDS=4V,f=25kHz Effective output capacitance, energy related 1) Co(er) pf VGS=V,VDS=...4V Effective output capacitance, time related Co(tr) 111 pf ID=constant,VGS=V,VDS=...4V 2) Turnon delay time td(on) 16 ns Rise time tr 7 ns Turnoff delay time td(off) 72 ns Fall time tf 7 ns VDD=4V,VGS=13V,ID=17.1A, RG=5.3Ω;seetable9 VDD=4V,VGS=13V,ID=17.1A, RG=5.3Ω;seetable9 VDD=4V,VGS=13V,ID=17.1A, RG=5.3Ω;seetable9 VDD=4V,VGS=13V,ID=17.1A, RG=5.3Ω;seetable9 Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 16 nc VDD=4V,ID=17.1A,VGS=to1V Gate to drain charge Qgd 21 nc VDD=4V,ID=17.1A,VGS=to1V Gate charge total Qg 64 nc VDD=4V,ID=17.1A,VGS=to1V Gate plateau voltage Vplateau 5.4 V VDD=4V,ID=17.1A,VGS=to1V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfromto4V 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfromto4V 6
Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD.9 V VGS=V,IF=17.1A,Tj=25 C Reverse recovery time trr 8 ns Reverse recovery charge Qrr 1 µc Peak reverse recovery current Irrm 3 A VR=4V,IF=33A,diF/dt=6A/µs; see table 8 VR=4V,IF=33A,diF/dt=6A/µs; see table 8 VR=4V,IF=33A,diF/dt=6A/µs; see table 8 7
5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 18 Diagram2:Safeoperatingarea 1 3 16 14 1 2 1 ms 1 ms µs 1 µs 1 µs 12 1 1 DC Ptot[W] 8 ID[A] 1 6 1 1 4 1 2 2 25 5 75 125 15 TC[ C] Ptot=f(TC) 1 3 1 1 1 1 2 1 3 VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp Diagram3:Safeoperatingarea 1 3 Diagram4:Max.transientthermalimpedance 1 1 2 µs 1 ms 1 ms 1 µs 1 µs.5 1 1 DC.2 ID[A] 1 ZthJC[K/W] 1 1.1.5 1 1.2.1 1 2 single pulse 1 3 1 1 1 1 2 1 3 VDS[V] ID=f(VDS);TC=8 C;D=;parameter:tp 1 2 1 5 1 4 1 3 1 2 1 1 tp[s] ZthJC=f(tP);parameter:D=tp/T 8
Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 16 14 12 2 V 1 V 8 V 7 V 9 8 7 6 2 V 1 V 8 V 7 V 6 V ID[A] 8 ID[A] 5 6 4 5.5 V 6 V 4 5.5 V 2 5 V 4.5 V 5 1 15 2 VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS 3 2 5 V 1 4.5 V 5 1 15 2 VDS[V] ID=f(VDS);Tj=125 C;parameter:VGS Diagram7:Typ.drainsourceonstateresistance.24.22 5.5 V 6 V 6.5 V 7 V 2 V 1 V Diagram8:Drainsourceonstateresistance.16.14.2.12 RDS(on)[Ω].18.16 RDS(on)[Ω].1.8 98% typ.14.6.12.4.1 2 4 6 8 ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS.2 5 25 25 5 75 125 15 Tj[ C] RDS(on)=f(Tj);ID=17.1A;VGS=1V 9
Diagram9:Typ.transfercharacteristics Diagram1:Typ.gatecharge 16 12 14 25 C 11 1 12 V 4 V 12 9 8 7 ID[A] 8 6 15 C VGS[V] 6 5 4 4 3 2 2 1 2 4 6 8 1 12 VGS[V] ID=f(VGS);VDS=2V;parameter:Tj 2 4 6 8 Qgate[nC] VGS=f(Qgate);ID=17.1Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode 1 2 Diagram12:Avalancheenergy 18 16 125 C 25 C 14 1 1 12 IF[A] EAS[mJ] 8 1 6 4 2 1 1..5 1. 1.5 VSD[V] IF=f(VSD);parameter:Tj 25 5 75 125 15 Tj[ C] EAS=f(Tj);ID=1.2A;VDD=5V 1
65V CoolMOS C7 Power Transistor Diagram 13: Drainsource breakdown voltage Diagram 14: Typ. capacitances 15 76 74 14 72 Ciss 7 C [pf] VBR(DSS) [V] 13 68 66 Coss 12 64 62 11 Crss 6 58 6 2 2 6 14 18 2 Tj [ C] 3 4 5 VDS [V] VBR(DSS)=f(Tj); ID=1 ma C=f(VDS); VGS= V; f=25 khz Diagram 15: Typ. Coss stored energy 11 1 9 8 Eoss [µj] 7 6 5 4 3 2 1 2 3 4 5 VDS [V] Eoss=f(VDS) 11 Rev. 2.1, 213118
65V CoolMOS C7 Power Transistor 6 Test Circuits Table 8 Diode characteristics Test circuit for diode characteristics Diode recovery waveform V,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tf ts dif / dt QF IF t dirr / dt trr =tf +ts Qrr = QF + QS Irrm Rg1 = Rg 2 IF 1 %Irrm QS Table 9 switching times (ss) Switching times test circuit for inductive load Switching times waveform VDS 9% VDS VGS VGS 1% td(on) td(off) tr ton tf toff Table 1 Unclamped inductive load (ss) Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VD VDS VDS 12 ID VDS Rev. 2.1, 213118
65V CoolMOS C7 Power Transistor 7 Package Outlines Figure 1 Outline PGTO 2474, dimensions in mm/inches 13 Rev. 2.1, 213118
65V CoolMOS C7 Power Transistor 8 Appendix A Table 11 Related Links IFX CoolMOSTM C7 Webpage: www.infineon.com IFX CoolMOSTM C7 application note: www.infineon.com IFX CoolMOSTM C7 simulation model: www.infineon.com IFX Design tools: www.infineon.com 14 Rev. 2.1, 213118
65V CoolMOS C7 Power Transistor Revision History Revision: 213118, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2. 213111 Release of final version 2.1 213118 final datasheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Edition 21181 Published by Infineon Technologies AG 81726 München, Germany 211 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 15 Rev. 2.1, 213118
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