MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE DataSheet Rev.2.1 Final PowerManagement&Multimarket
1Description CoolMOS CEisarevolutionarytechnologyforhighvoltagepower MOSFETs.Thehighvoltagecapabilitycombinessafetywithperformance andruggednesstoallowstabledesignsathighestefficiencylevel. CoolMOS 8VCEcomeswithselectedpackagechoiceofferingthe benefitofreducedsystemcostsandhigherpowerdensitydesigns. TO22FP Features Highvoltagetechnology Extremedv/dtrated Highpeakcurrentcapability Lowgatecharge Loweffectivecapacitances Pbfreeplating,RoHSCompliant,Halogenfreemoldcompound Qualifiedforconsumergradeapplications Drain Pin 2, Tab Applications LEDLightingforretrofitapplicationsinQRFlybacktopology Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Gate Pin 1 Source Pin 3 Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25 C 8 V RDS(on),max 95 mω Qg.typ 31 nc ID,pulse 18 A Eoss@4V 2.4 µj Body diode di/dt 4 A/µs Type/OrderingCode Package Marking RelatedLinks PGTO 22 FullPAK 8R1KCE see Appendix A 2
TableofContents Description............................................................................. 2 Maximum ratings........................................................................ 4 Thermal characteristics.................................................................... 5 Electrical characteristics................................................................... 6 Electrical characteristics diagrams........................................................... 8 Test Circuits........................................................................... 12 Package Outlines....................................................................... 13 Appendix A............................................................................ 14 Revision History........................................................................ 15 Disclaimer............................................................................ 15 3
2Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID 5.7 3.6 A TC = 25 C TC = 1 C Pulsed drain current 2) ID,pulse 18 A TC=25 C Avalanche energy, single pulse EAS 23 mj ID=1.6A; VDD=5V; see table 1 Avalanche energy, repetitive EAR.2 mj ID=1.6A; VDD=5V; see table 1 Avalanche current, repetitive IAR 1.6 A MOSFET dv/dt ruggedness dv/dt 5 V/ns VDS=...64V Gate source voltage (static) VGS 2 2 V static; Gate source voltage (dynamic) VGS 3 3 V AC (f>1 Hz) Power dissipation Ptot 32 W TC=25 C Storage temperature Tstg 4 15 C Operating junction temperature Tj 4 15 C Mounting torque 5 Ncm M2.5 screws Continuous diode forward current IS 5.7 A TC=25 C Diode pulse current 2) IS,pulse 18 A TC=25 C Reverse diode dv/dt 3) dv/dt 4 V/ns VDS=...4V,ISD<=IS,Tj=25 C see table 8 Maximum diode commutation speed dif/dt 4 A/µs VDS=...4V,ISD<=IS,Tj=25 C see table 8 Insulation withstand voltage for TO22FP VISO 25 V Vrms,TC=25 C,t=1min 1) Limited by Tj max <15 C. 2) Pulse width tp limited by Tj,max 3) IdenticallowsideandhighsideswitchwithidenticalRG 4
3Thermalcharacteristics Table3ThermalcharacteristicsTO22FullPAK Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 3.9 C/W Thermal resistance, junction ambient RthJA 8 C/W leaded Soldering temperature, wavesoldering only allowed at leads Tsold 26 C 1.6mm (.63 in.) from case for 1s 5
4Electricalcharacteristics attj=25 C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 8 V VGS=V,ID=.25mA Gate threshold voltage V(GS)th 2.1 3. 3.9 V VDS=VGS,ID=.25mA Zero gate voltage drain current IDSS 5 1 µa VDS=8,VGS=V,Tj=25 C VDS=8,VGS=V,Tj=15 C Gatesource leakage current IGSS 1 na VGS=2V,VDS=V Drainsource onstate resistance RDS(on).83 2.19.95 Ω VGS=1V,ID=3.6A,Tj=25 C VGS=1V,ID=3.6A,Tj=15 C Gate resistance RG 1.2 Ω f=1mhz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 785 pf VGS=V,VDS=1V,f=1MHz Output capacitance Coss 33 pf VGS=V,VDS=1V,f=1MHz Effective output capacitance, energy related 1) Co(er) 26 pf VGS=V,VDS=...48V Effective output capacitance, time related 2) Co(tr) 69 pf ID=constant,VGS=V,VDS=...48V Turnon delay time td(on) 25 ns Rise time tr 15 ns Turnoff delay time td(off) 72 ns Fall time tf 8 ns VDD=4V,VGS=1V,ID=5.7A, RG=15Ω;seetable9 VDD=4V,VGS=1V,ID=5.7A, RG=15Ω;seetable9 VDD=4V,VGS=1V,ID=5.7A, RG=15Ω;seetable9 VDD=4V,VGS=1V,ID=5.7A, RG=15Ω;seetable9 Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 4 nc VDD=64V,ID=5.7A,VGS=to1V Gate to drain charge Qgd 15 nc VDD=64V,ID=5.7A,VGS=to1V Gate charge total Qg 31 nc VDD=64V,ID=5.7A,VGS=to1V Gate plateau voltage Vplateau 5.5 V VDD=64V,ID=5.7A,VGS=to1V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfromto48V 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfromto48V 6
Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD 1 V VGS=V,IF=5.7A,Tj=25 C Reverse recovery time trr 52 ns Reverse recovery charge Qrr 5 µc Peak reverse recovery current Irrm 18 A VR=4V,IF=5.7A,diF/dt=1A/µs; see table 8 VR=4V,IF=5.7A,diF/dt=1A/µs; see table 8 VR=4V,IF=5.7A,diF/dt=1A/µs; see table 8 7
5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 35 Diagram2:Safeoperatingarea 1 2 3 25 1 1 1 µs 1 µs 1 µs Ptot[W] 2 15 ID[A] 1 1 1 DC 1 ms 1 ms 1 1 2 5 25 5 75 1 125 15 TC[ C] Ptot=f(TC) 1 3 1 1 1 1 2 1 3 VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp Diagram3:Safeoperatingarea 1 2 Diagram4:Max.transientthermalimpedance 1 1 ID[A] 1 1 1 1 1 DC 1 ms 1 ms 1 µs 1 µs 1 µs ZthJC[K/W] 1.5.2.1.5.2 1 1.1 1 2 single pulse 1 3 1 1 1 1 2 1 3 VDS[V] ID=f(VDS);TC=8 C;D=;parameter:tp 1 2 1 5 1 4 1 3 1 2 1 1 1 1 1 tp[s] ZthJC=f(tP);parameter:D=tp/T 8
Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 2 12 2 V 11 15 1 V 1 9 8 1 V 2 V 6 V 7 ID[A] 1 6.5 V ID[A] 6 5 5.5 V 6 V 4 5 V 5 5.5 V 5 V 3 2 1 4.5 V 5 1 15 2 25 VDS[V] ID=f(VDS);Tj=25 C;tp=1µs;parameter:VGS 5 1 15 2 25 VDS[V] ID=f(VDS);Tj=15 C;tp=1µs;parameter:VGS Diagram7:Typ.drainsourceonstateresistance 4.2 3.8 3.4 Diagram8:Drainsourceonstateresistance 2.4 2.2 2. 1.8 1.6 RDS(on)[Ω] 3. 2.6 2.2 4.5 V 5 V 5.5 V 6 V 1 V 2 V RDS(on)[Ω] 1.4 1.2 1..8 98% typ 1.8.6.4 1.4 2 4 6 8 1 ID[A] RDS(on)=f(ID);Tj=15 C;parameter:VGS.2 5 25 25 5 75 1 125 15 Tj[ C] RDS(on)=f(Tj);ID=3.6A;VGS=1V 9
Diagram9:Typ.transfercharacteristics 2 Diagram1:Typ.gatecharge 1 25 C 9 15 8 7 16 V 64 V 6 ID[A] 1 15 C VGS[V] 5 4 5 3 2 1 2 4 6 8 1 VGS[V] ID=f(VGS); VDS >2 ID RDS(on)max;tp=1µs;parameter:Tj 5 1 15 2 25 3 35 Qgate[nC] VGS=f(Qgate);ID=5.7Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode 1 2 25 C 15 C Diagram12:Avalancheenergy 25 2 1 1 15 IF[A] EAS[mJ] 1 1 5 1 1..5 1. 1.5 2. VSD[V] IF=f(VSD);tp=1µs;parameter:Tj 25 5 75 1 125 15 Tj[ C] EAS=f(Tj);ID=1.6A;VDD=5V 1
Diagram13:Drainsourcebreakdownvoltage 96 Diagram14:Typ.capacitances 1 4 94 92 9 88 1 3 Ciss 86 VBR(DSS)[V] 84 82 8 78 C[pF] 1 2 Coss 76 74 1 1 Crss 72 7 68 75 5 25 25 5 75 1 125 15 175 Tj[ C] VBR(DSS)=f(Tj);ID=.25mA 1 1 2 3 4 5 VDS[V] C=f(VDS);VGS=V;f=1MHz Diagram15:Typ.Cossstoredenergy 6. 5.5 5. 4.5 4. Eoss[µJ] 3.5 3. 2.5 2. 1.5 1..5. 1 2 3 4 5 6 7 8 VDS[V] Eoss=f(VDS) 11
6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g 1 V,I (peak) R g 2 I F di F / dt t F t rr t S I F t I F R g 1 = R g 2 I rrm Q F Q S di rr / dt 1 %I rrm t rr =t F +t S Q rr = Q F +Q S Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform 9% V GS V GS 1% t d(on) t r t d(off) t f t on t off Table1Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D I D 12
7PackageOutlines ),/ /,..,/*6*45,(+*5 MIN MAX MIN MAX ' 4.5 4.9.177.193 '# 2.34 2.85.92.112 '$ 2.42 2.86.95.113 9.65.9.26.35 9#.95 1.38.37.54 9$.95 1.51.37.59 9%.65 1.38.26.54 9&.65 1.51.26.59 ; ) )# * = =# +..# @3 3.4.63 15.67 16.15 8.97 9.83 1. 1.65 2.54 (BSC) 28.7 12.78 2.83 2.95 3.15 5.8 3 29.75 13.75 3.45 3.38 3.5.16.617.353.394 1.13.53.111.116.124.387.419.1 (BSC).2 3 Dimensions do not include mold flash, protrusions or gate burrs.25.636 1.171.541.136.133.138 )1(7/*6 1" Z8B3319 5('.* 2.5 *7412*' 241*(6,1 2.5,557* )'6* 55214 4*8,5,1 4 5mm Figure 1 Outline PGTO 22 FullPAK, dimensions in mm/inches 13
8V CoolMOS CE Power Transistor 8 Appendix A Table 11 Related Links IFX CoolMOS TM CE Webpage: www.infineon.com IFX CoolMOS TM CE application note: www.infineon.com IFX CoolMOS TM CE simulation model: www.infineon.com IFX Design tools: www.infineon.com 14 Rev. 2.1, 215623
8V CoolMOS CE Power Transistor Revision History Revision: 215623, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2. 214925 Release of final version 2.1 215623 Continuous current Id update We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 München, Germany 215 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 15 Rev. 2.1, 215623