MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket
1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies. ThinPAK8x8 CoolMOS C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation.Theproductportfolio providesallbenefitsoffastswitchingsuperjunctionmosfetsoffering betterefficiency,reducedgatecharge,easyimplementationand outstandingreliability. Features IncreasedMOSFETdv/dtruggedness BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg ThinPAKSMDPackagewithverylowparasiticinductancetoenablefast andreliableswitchingwithminimumofsizetoincreasepowerdensity Easytouse/driveduetodriversourcepinforbettercontrolofthegate. Pbfreeplating,halogenfreemoldcompound QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(JSTD20 andjesd22) Benefits Enablinghighersystemefficiencybylowerswitchinglosses Enablinghigherfrequency/increasedpowerdensitysolutions Systemcost/sizesavingsduetoreducedcoolingrequirements Highersystemreliabilityduetoloweroperatingtemperatures Applications PFCstagesandhardswitchingPWMstagesfore.g.Computing,Server, Telecom,UPSandSolar. Gate Pin 1 Driver Source Pin 2 Drain Pin 5 Power Source Pin 3,4 Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 700 V RDS(on),max 230 mω Qg.typ 20 nc ID,pulse 41 A Eoss@400V 2.3 µj Body diode di/dt 55 A/µs Type/OrderingCode Package Marking RelatedLinks PGVSON4 65C7230 see Appendix A 2
TableofContents Description............................................................................. 2 Maximum ratings........................................................................ 4 Thermal characteristics.................................................................... 5 Electrical characteristics................................................................... 6 Electrical characteristics diagrams........................................................... 8 Test Circuits........................................................................... 12 Package Outlines....................................................................... 13 Appendix A............................................................................ 14 Revision History........................................................................ 15 Disclaimer............................................................................ 15 3
2Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID 7 A TC=25 C TC=0 C Pulsed drain current 2) ID,pulse 41 A TC=25 C Avalanche energy, single pulse EAS 48 mj ID=4.8A; VDD=50V Avalanche energy, repetitive EAR 0.24 mj ID=4.8A; VDD=50V Avalanche current, single pulse IAS 4.8 A MOSFET dv/dt ruggedness dv/dt 0 V/ns VDS=0...400V Gate source voltage (static) VGS 20 20 V static; Gate source voltage (dynamic) VGS 30 30 V AC (f>1 Hz) Power dissipation Ptot 67 W TC=25 C Storage temperature Tstg 40 150 C Operating junction temperature Tj 40 150 C Mounting torque n.a. Ncm Continuous diode forward current IS A TC=25 C Diode pulse current 2) IS,pulse 41 A TC=25 C Reverse diode dv/dt 3) dv/dt 1 V/ns VDS=0...400V,ISD<=IS,Tj=25 C Maximum diode commutation speed dif/dt 55 A/µs VDS=0...400V,ISD<=IS,Tj=25 C Insulation withstand voltage VISO n.a. V Vrms,TC=25 C,t=1min 1) Limited by Tj max. 2) Pulse width tp limited by Tj,max 3) IdenticallowsideandhighsideswitchwithidenticalRG 4
3Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 1.87 C/W Thermal resistance, junction ambient RthJA 62 C/W device on PCB, minimal footprint Thermal resistance, junction ambient for SMD version RthJA 35 45 C/W Reflow soldering temperature Tsold 260 C reflow MSL3 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thickness) copper area for drain connection and cooling. PCB is vertical without air stream cooling. 5
4Electricalcharacteristics attj=25 C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 650 V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=0.24mA Zero gate voltage drain current IDSS 1 µa VDS=650,VGS=0V,Tj=25 C VDS=650,VGS=0V,Tj=150 C Gatesource leakage current IGSS 0 na VGS=20V,VDS=0V Drainsource onstate resistance RDS(on) 0.204 0.488 0.230 Ω VGS=V,ID=2.4A,Tj=25 C VGS=V,ID=2.4A,Tj=150 C Gate resistance RG 1 Ω f=1mhz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 996 pf VGS=0V,VDS=400V,f=250kHz Output capacitance Coss 14 pf VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related 1) Co(er) 29 pf VGS=0V,VDS=0...400V Effective output capacitance, time related Co(tr) 313 pf ID=constant,VGS=0V,VDS=0...400V 2) Turnon delay time td(on) 8 ns Rise time tr 5 ns Turnoff delay time td(off) 71 ns Fall time tf 22 ns VDD=400V,VGS=13V,ID=2.4A, RG=Ω VDD=400V,VGS=13V,ID=2.4A, RG=Ω VDD=400V,VGS=13V,ID=2.4A, RG=Ω VDD=400V,VGS=13V,ID=2.4A, RG=Ω Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 5 nc VDD=400V,ID=2.4A,VGS=0toV Gate to drain charge Qgd 6 nc VDD=400V,ID=2.4A,VGS=0toV Gate charge total Qg 20 nc VDD=400V,ID=2.4A,VGS=0toV Gate plateau voltage Vplateau 5.0 V VDD=400V,ID=2.4A,VGS=0toV 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 6
Table7Reversediodecharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Diode forward voltage VSD 0.8 V VGS=0V,IF=2.4A,Tj=25 C Reverse recovery time trr 414 ns VR=400V,IF=A,diF/dt=55A/µs Reverse recovery charge Qrr 3.1 µc VR=400V,IF=A,diF/dt=55A/µs Peak reverse recovery current Irrm 13.6 A VR=400V,IF=A,diF/dt=55A/µs 7
5Electricalcharacteristicsdiagrams Table8 Diagram1:Powerdissipation 70 60 50 Diagram2:Safeoperatingarea 2 µs 1 µs 0 µs 1 ms ms 1 DC Ptot[W] 40 30 ID[A] 0 1 20 2 0 0 25 50 75 0 125 150 TC[ C] Ptot=f(TC) 3 0 1 2 3 VDS[V] ID=f(VDS);TC=25 C;D=0;parameter:tp Table9 Diagram3:Safeoperatingarea 2 µs 0 µs 1 µs 1 1 ms ms Diagram4:Max.transientthermalimpedance 1 DC 0 0.5 ID[A] 0 1 ZthJC[K/W] 1 0.2 0.1 0.05 0.02 0.01 single pulse 2 3 0 1 2 3 VDS[V] ID=f(VDS);TC=80 C;D=0;parameter:tp 2 5 4 3 2 1 tp[s] ZthJC=f(tP);parameter:D=tp/T 8
Table Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 45 30 40 35 20 V V 8 V 25 V 20 V 8 V 7 V 30 7 V 20 ID[A] 25 20 ID[A] 15 6 V 15 6 V 5.5 V 5.5 V 5 5 V 0 4.5 V 0 5 15 20 VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS 5 V 5 4.5 V 0 0 5 15 20 VDS[V] ID=f(VDS);Tj=125 C;parameter:VGS Table11 Diagram7:Typ.drainsourceonstateresistance 0.95 5.5 V 6 V 7 V 0.90 6.5 V 20 V V 0.85 0.80 0.75 Diagram8:Drainsourceonstateresistance 0.55 0.50 0.45 0.40 RDS(on)[Ω] 0.70 0.65 0.60 RDS(on)[Ω] 0.35 0.30 98% 0.55 0.25 typ 0.50 0.45 0.40 0.20 0.15 0.35 0 5 15 20 25 30 ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS 0. 50 25 0 25 50 75 0 125 150 Tj[ C] RDS(on)=f(Tj);ID=2.4A;VGS=V 9
Table12 Diagram9:Typ.transfercharacteristics Diagram:Typ.gatecharge 45 12 40 35 25 C 120 V 400 V 30 8 ID[A] 25 20 150 C VGS[V] 6 15 4 2 5 0 0 2 4 6 8 12 VGS[V] ID=f(VGS);VDS=20V;parameter:Tj 0 0 5 15 20 25 Qgate[nC] VGS=f(Qgate);ID=2.4Apulsed;parameter:VDD Table13 Diagram11:Forwardcharacteristicsofreversediode 2 Diagram12:Avalancheenergy 50 45 40 1 35 IF[A] 125 C 25 C EAS[mJ] 30 25 20 0 15 5 1 0.0 0.5 1.0 1.5 VSD[V] IF=f(VSD);parameter:Tj 0 25 50 75 0 125 150 Tj[ C] EAS=f(Tj);ID=4.8A;VDD=50V
650V CoolMOS C7 Power Transistor Table 14 Diagram 13: Drainsource breakdown voltage Diagram 14: Typ. capacitances 4 760 740 Ciss 720 3 680 C [pf] VBR(DSS) [V] 700 660 2 Coss 640 1 620 600 Crss 580 60 20 20 60 0 140 180 0 0 0 200 Tj [ C] 300 400 500 VDS [V] VBR(DSS)=f(Tj); ID=1mA C=f(VDS); VGS=0 V; f=250 khz Table 15 Diagram 15: Typ. Coss stored energy 3.0 2.5 Eoss [µj] 2.0 1.5 1.0 0.5 0.0 0 0 200 300 400 500 VDS [V] Eoss=f(VDS) 11 Rev. 2.0, 20130429
650V CoolMOS C7 Power Transistor 6 Test Circuits Table 16 Diode characteristics Test circuit for diode characteristics Diode recovery waveform V,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tf ts dif / dt QF IF t dirr / dt trr =tf +ts Qrr = QF + QS Irrm Rg1 = Rg 2 IF %Irrm QS Table 17 switching times (ss) Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS % td(on) td(off) tr ton tf toff Table 18 Unclamped inductive load (ss) Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VD VDS VDS 12 ID VDS Rev. 2.0, 20130429
650V CoolMOS C7 Power Transistor 7 Package Outlines Figure 1 Outline PGVSON4, dimensions in mm/inches 13 Rev. 2.0, 20130429
650V CoolMOS C7 Power Transistor 8 Appendix A Table 19 Related Links IFX CoolMOSTM C7 Webpage: www.infineon.com IFX CoolMOSTM C7 application note: www.infineon.com IFX CoolMOSTM C7 simulation model: www.infineon.com IFX Design tools: www.infineon.com 14 Rev. 2.0, 20130429
650V CoolMOS C7 Power Transistor Revision History Revision: 20130429, Rev. 2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 20130429 Release of final version We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Edition 201801 Published by Infineon Technologies AG 81726 München, Germany 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 15 Rev. 2.0, 20130429
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