FD800R17HP4-K_B2. VCES = 1700V IC nom = 800A / ICRM = 1600A. ExtendedOperationTemperatureTvjop NiedrigesVCEsat
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1 / CES = 7 IC nom = / ICRM = Typischenwendungen Typicalpplications Chopper-nwendungen Chopperpplications Hochleistungsumrichter HighPowerConverters Traktionsumrichter TractionDrives Windgeneratoren WindTurbines ElektrischeEigenschaften ElectricalFeatures ErweiterteSperrschichttemperaturTvjop ExtendedOperationTemperatureTvjop NiedrigesCEsat LowCEsat MechanischeEigenschaften MechanicalFeatures 4kCminIsolationsfestigkeit 4kCminInsulation lsic Bodenplatte für erhöhte thermische lsic Base Plate for increased Thermal Cycling Lastwechselfestigkeit Capability GehäusemitCTI> PackagewithCTI> GroßeLuft-undKriechstrecken HighCreepageandClearanceDistances HoheLast-undthermischeWechselfestigkeit HighPowerandThermalCyclingCapability HoheLeistungsdichte HighPowerDensity IHMBGehäuse IHMBHousing ModuleLabelCode BarcodeCode28 DMX-Code ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit ULapproved(E83335)
2 IGBT,Brems-Chopper/IGBT,Brake-Chopper HöchstzulässigeWerte/MaximumRatedalues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent Gesamt-erlustleistung Totalpowerdissipation Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage Tvj = -4 C Tvj = 5 C CES TC = C, Tvj max = 75 C IC nom tp = ms ICRM TC = 25 C, Tvj max = 75 C Ptot 5,35 kw GES +/-2 CharakteristischeWerte/Characteristicalues min. typ. max. Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage Gate-Schwellenspannung Gatethresholdvoltage Gateladung Gatecharge InternerGatewiderstand Internalgateresistor Eingangskapazität Inputcapacitance Rückwirkungskapazität Reversetransfercapacitance Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent Gate-Emitter-Reststrom Gate-emitterleakagecurrent Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload nstiegszeit,induktivelast Risetime,inductiveload bschaltverzögerungszeit,induktivelast Turn-offdelaytime,inductiveload Fallzeit,induktiveLast Falltime,inductiveload EinschaltverlustenergieproPuls Turn-onenergylossperpulse bschaltverlustenergiepropuls Turn-offenergylossperpulse Kurzschlußverhalten SCdata Wärmewiderstand,ChipbisGehäuse Thermalresistance,junctiontocase Wärmewiderstand,GehäusebisKühlkörper Thermalresistance,casetoheatsink TemperaturimSchaltbetrieb Temperatureunderswitchingconditions IC =, GE = 5 IC =, GE = 5 IC =, GE = 5 Tvj = 5 C CE sat,9 2,3 2,4 2,25 IC = 48, m, CE = GE, GEth 5,2 5,8 6,4 GE = QG 8,5 µc RGint,9 Ω f = MHz,, CE = 25, GE = Cies 65, nf f = MHz,, CE = 25, GE = Cres 2, nf CE = 57, GE =, ICES 5, m CE =, GE = 2, IGES n IC =, CE = 9 GE = ±5 RGon =,39 Ω IC =, CE = 9 GE = ±5 RGon =,39 Ω IC =, CE = 9 GE = ±5 RGoff = 2,2 Ω IC =, CE = 9 GE = ±5 RGoff = 2,2 Ω IC =, CE = 9, LS = 5 nh GE = ±5 RGon =,39 Ω IC =, CE = 9, LS = 5 nh GE = ±5 RGoff = 2,2 Ω GE 5, CC = CEmax = CES -LsCE di/dt Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C tp, Tvj = 5 C td on tr td off tf Eon Eoff ISC,5,55,55,,2,2,,2,25,4,7, proigbt/perigbt RthJC 28, K/kW proigbt/perigbt λpaste=w/(m K)/λgrease=W/(m K) RthCH 3, K/kW Tvj op -4 5 C 2
3 Diode,Brems-Chopper/Diode,Brake-Chopper HöchstzulässigeWerte/MaximumRatedalues PeriodischeSpitzensperrspannung Repetitivepeakreversevoltage Dauergleichstrom ContinuousDCforwardcurrent PeriodischerSpitzenstrom Repetitivepeakforwardcurrent Grenzlastintegral I²t-value Spitzenverlustleistung Maximumpowerdissipation Mindesteinschaltdauer Minimumturn-ontime Tvj = -4 C Tvj = 5 C RRM IF tp = ms IFRM R =, tp = ms, R =, tp = ms, Tvj = 5 C I²t 6 5 k²s k²s PRQM kw ton min, CharakteristischeWerte/Characteristicalues min. typ. max. Durchlassspannung Forwardvoltage Rückstromspitze Peakreverserecoverycurrent Sperrverzögerungsladung Recoveredcharge bschaltenergiepropuls Reverserecoveryenergy Wärmewiderstand,ChipbisGehäuse Thermalresistance,junctiontocase Wärmewiderstand,GehäusebisKühlkörper Thermalresistance,casetoheatsink TemperaturimSchaltbetrieb Temperatureunderswitchingconditions IF =, GE = IF =, GE = IF =, GE = IF =, - dif/dt = 6 / (Tvj=5 C) R = 9 GE = -5 IF =, - dif/dt = 6 / (Tvj=5 C) R = 9 GE = -5 IF =, - dif/dt = 6 / (Tvj=5 C) R = 9 GE = -5 Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C F IRM Qr Erec,65,65, , prodiode/perdiode RthJC 37,5 K/kW prodiode/perdiode λpaste=w/(m K)/λgrease=W/(m K) µc µc µc RthCH 33, K/kW Tvj op -4 5 C 3
4 Diode,Revers/Diode,Reverse HöchstzulässigeWerte/MaximumRatedalues PeriodischeSpitzensperrspannung Repetitivepeakreversevoltage Dauergleichstrom ContinuousDCforwardcurrent PeriodischerSpitzenstrom Repetitivepeakforwardcurrent Grenzlastintegral I²t-value Spitzenverlustleistung Maximumpowerdissipation Mindesteinschaltdauer Minimumturn-ontime Tvj = -4 C Tvj = 5 C RRM IF tp = ms IFRM R =, tp = ms, R =, tp = ms, Tvj = 5 C I²t 5 95, k²s k²s PRQM kw ton min, CharakteristischeWerte/Characteristicalues min. typ. max. Durchlassspannung Forwardvoltage Rückstromspitze Peakreverserecoverycurrent Sperrverzögerungsladung Recoveredcharge bschaltenergiepropuls Reverserecoveryenergy Wärmewiderstand,ChipbisGehäuse Thermalresistance,junctiontocase Wärmewiderstand,GehäusebisKühlkörper Thermalresistance,casetoheatsink TemperaturimSchaltbetrieb Temperatureunderswitchingconditions IF =, GE = IF =, GE = IF =, GE = Tvj = 5 C IF =, - dif/dt = 65 / (Tvj=5 C) R = 9 IRM Tvj = 5 C IF =, - dif/dt = 65 / (Tvj=5 C) R = 9 Qr Tvj = 5 C IF =, - dif/dt = 65 / (Tvj=5 C) R = 9 Erec Tvj = 5 C F,8,9, ,2 prodiode/perdiode RthJC 48, K/kW prodiode/perdiode λpaste=w/(m K)/λgrease=W/(m K) µc µc µc RthCH 33, K/kW Tvj op -4 5 C 4
5 Modul/Module Isolations-Prüfspannung Isolationtestvoltage MaterialModulgrundplatte Materialofmodulebaseplate Kriechstrecke Creepagedistance Luftstrecke Clearance ergleichszahlderkriechwegbildung Comperativetrackingindex Modulstreuinduktivität Strayinductancemodule Modulleitungswiderstand,nschlüsse- Chip Moduleleadresistance,terminals-chip Lagertemperatur Storagetemperature nzugsdrehmomentf.modulmontage Mountingtorqueformodulmounting nzugsdrehmomentf.elektr.nschlüsse Terminalconnectiontorque Gewicht Weight RMS, f = 5 Hz, t = min. ISOL 4, k lsic Kontakt-Kühlkörper/terminaltoheatsink Kontakt-Kontakt/terminaltoterminal Kontakt-Kühlkörper/terminaltoheatsink Kontakt-Kontakt/terminaltoterminal 32,2 32,2 9, 9, CTI > min. typ. max. mm mm LsCE 8 nh TC=25 C,proSchalter/perswitch RCC'+EE' R'+CC',28,25 Tstg -4 5 C SchraubeM6-Montagegem.gültigerpplikationsschrift ScrewM6-Mountingaccordingtovalidapplicationnote SchraubeM4-Montagegem.gültigerpplikationsschrift ScrewM4-Mountingaccordingtovalidapplicationnote SchraubeM8-Montagegem.gültigerpplikationsschrift ScrewM8-Mountingaccordingtovalidapplicationnote mω M 4,25-5,75 Nm G g M,8 8, - - 2, Nm Nm 5
6 usgangskennlinieigbt,brems-chopper(typisch) outputcharacteristicigbt,brake-chopper(typical) IC=f(CE) GE=5 usgangskennlinienfeldigbt,brems-chopper(typisch) outputcharacteristicigbt,brake-chopper(typical) IC=f(CE) Tvj=5 C Tvj = 5 C GE = 2 GE = 5 GE = 2 GE = GE = 9 GE = 8 IC [] IC [],,5,,5 2, 2,5 3, 3,5 4, CE [],,5,,5 2, 2,5 3, 3,5 4, 4,5 5, CE [] ÜbertragungscharakteristikIGBT,Brems-Chopper(typisch) transfercharacteristicigbt,brake-chopper(typical) IC=f(GE) CE=2 SchaltverlusteIGBT,Brems-Chopper(typisch) switchinglossesigbt,brake-chopper(typical) Eon=f(IC),Eoff=f(IC) GE=±5,RGon=.39Ω,RGoff=2.2Ω,CE=9 Tvj = 5 C 9 Eon, Eon, Tvj = 5 C Eoff, Eoff, Tvj = 5 C 7 IC [] E [] GE [] IC [] 6
7 SchaltverlusteIGBT,Brems-Chopper(typisch) switchinglossesigbt,brake-chopper(typical) Eon=f(RG),Eoff=f(RG) GE=±5,IC=,CE=9 TransienterWärmewiderstandIGBT,Brems-Chopper transientthermalimpedanceigbt,brake-chopper ZthJC=f(t) 9 Eon, Eon, Tvj = 5 C Eoff, Eoff, Tvj = 5 C ZthJC : IGBT E [] ZthJC [K/kW] RG [Ω] i: ri[k/kw]: τi[s]: 2,4,2 2 6,4,26 3 5,2, ,397,,,, t [s] SichererRückw.-rbeitsber.IGBT,Brems-Chopper(RBSO) reversebiassafeoperatingareaigbt,brake-chopper (RBSO) IC=f(CE) GE=±5,RGoff=2.2Ω,Tvj=5 C IC, Modul IC, Chip DurchlasskennliniederDiode,Brems-Chopper(typisch) forwardcharacteristicofdiode,brake-chopper(typical) IF=f(F) Tvj = 5 C IC [] IF [] CE [],,2,4,6,8,,2,4,6,8 2, 2,2 2,4 F [] 7
8 SchaltverlusteDiode,Brems-Chopper(typisch) switchinglossesdiode,brake-chopper(typical) Erec=f(IF) RGon=.39Ω,CE=9 SchaltverlusteDiode,Brems-Chopper(typisch) switchinglossesdiode,brake-chopper(typical) Erec=f(RG) IF=,CE= Erec, Erec, Tvj = 5 C 35 3 Erec, Erec, Tvj = 5 C E [] 5 E [] IF [],,3,6,9,2,5,8 2, 2,4 2,7 3, 3,3 3,6 3,9 RG [Ω] TransienterWärmewiderstandDiode,Brems-Chopper transientthermalimpedancediode,brake-chopper ZthJC=f(t) SichererrbeitsbereichDiode,Brems-Chopper(SO) safeoperationareadiode,brake-chopper(so) IR=f(R) Tvj=5 C ZthJC : Diode IR, Modul ZthJC [K/kW] IR [] i: ri[k/kw]: τi[s]: 4,3, 2,4,26 3 8,4, ,4 2,25,,, t [s] R [] 8
9 DurchlasskennliniederDiode,Revers(typisch) forwardcharacteristicofdiode,reverse(typical) IF=f(F) SchaltverlusteDiode,Revers(typisch) switchinglossesdiode,reverse(typical) Erec=f(IF) RGon=.39Ω,CE=9 Tvj = 5 C 35 3 Erec, Erec, Tvj = 5 C 25 IF [] E [] 5 5,,5,,5 2, 2,5 3, F [] IF [] SchaltverlusteDiode,Revers(typisch) switchinglossesdiode,reverse(typical) Erec=f(RG) IF=,CE=9 TransienterWärmewiderstandDiode,Revers transientthermalimpedancediode,reverse ZthJC=f(t) 3 Erec, Erec, Tvj = 5 C ZthJC : Diode 25 E [] 5 ZthJC [K/kW] 5,,3,6,9,2,5,8 2, 2,4 2,7 3, 3,3 3,6 3,9 RG [Ω] i: ri[k/kw]: τi[s]: 8,35,5 2 27,7,3 3 7,9,2 4 4,5 3,2,,, t [s] 9
10 SichererrbeitsbereichDiode,Revers(SO) safeoperationareadiode,reverse(so) IR=f(R) Tvj=5 C IR, Modul IR [] R []
11 Schaltplan/circuit_diagram_headline Gehäuseabmessungen/packageoutlines
12 2 Nutzungsbedingungen DieindiesemProduktdatenblattenthaltenenDatensindausschließlichfürtechnischgeschultesFachpersonalbestimmt.DieBeurteilung dereignungdiesesproduktesfürihrenwendungsowiediebeurteilungderollständigkeitderbereitgestelltenproduktdatenfürdiese nwendungobliegtihnenbzw.ihrentechnischenbteilungen. IndiesemProduktdatenblattwerdendiejenigenMerkmalebeschrieben,fürdiewireineliefervertraglicheGewährleistungübernehmen.Eine solchegewährleistungrichtetsichausschließlichnachmaßgabederimjeweiligenliefervertragenthaltenenbestimmungen.garantien jeglicherrtwerdenfürdasproduktunddesseneigenschaftenkeinesfallsübernommen.diengabenindengültigennwendungs-und MontagehinweisendesModulssindzubeachten. SolltenSievonunsProduktinformationenbenötigen,dieüberdenInhaltdiesesProduktdatenblattshinausgehenundinsbesondereeine spezifischeerwendungunddeneinsatzdiesesproduktesbetreffen,setzensiesichbittemitdemfürsiezuständigenertriebsbüroin erbindung(siehewww.infineon.com,ertrieb&kontakt).fürinteressentenhaltenwirpplicationnotesbereit. ufgrunddertechnischennforderungenkönnteunserproduktgesundheitsgefährdendesubstanzenenthalten.beirückfragenzudenin diesemproduktjeweilsenthaltenensubstanzensetzensiesichbitteebenfallsmitdemfürsiezuständigenertriebsbüroinerbindung. SolltenSiebeabsichtigen,dasProduktinnwendungenderLuftfahrt,ingesundheits-oderlebensgefährdendenoderlebenserhaltenden nwendungsbereicheneinzusetzen,bittenwirummitteilung.wirweisendaraufhin,dasswirfürdiesefälle -diegemeinsamedurchführungeinesrisiko-undqualitätsassessments; -denbschlussvonspeziellenqualitätssicherungsvereinbarungen; -diegemeinsameeinführungvonmaßnahmenzueinerlaufendenproduktbeobachtungdringendempfehlenund gegebenenfallsdiebelieferungvonderumsetzungsolchermaßnahmenabhängigmachen. Soweiterforderlich,bittenwirSie,entsprechendeHinweiseanIhreKundenzugeben. InhaltlicheÄnderungendiesesProduktdatenblattsbleibenvorbehalten. Terms&Conditionsofusage Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch application. Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.nysuchwarrantyisgranted exclusivelypursuantthetermsandconditionsofthesupplyagreement.therewillbenoguaranteeofanykindfortheproductandits characteristics.theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered. Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).forthosethatarespecifically interestedwemayprovideapplicationnotes. Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe salesoffice,whichisresponsibleforyou. ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please note,thatforanysuchapplicationsweurgentlyrecommend -toperformjointriskandqualityssessments; -theconclusionofqualitygreements; -toestablishjointmeasuresofanongoingproductsurvey,andthatwemaymakedeliverydependedon therealizationofanysuchmeasures. Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers. Changesofthisproductdatasheetarereserved.
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DF650R17IE4. Technische Information / Technical Information. Module Label Code Barcode Code 128. IGBT-Module IGBT-modules
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Nadere informatieDeze bijlage is geldig van: tot Vervangt bijlage d.d.:
Voorsterweg 31 8316 PR Marknesse Nederland Locatie waar activiteiten onder accreditatie worden uitgevoerd Hoofdkantoor LF 0 0 DC/LF Grootheden LF 1 0 Gelijkspanning 0 µv - 10 µv 0,2 µv Meten 10 µv - 2
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MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE IPx60R1K0CE DataSheet Rev.2.0 Final PowerManagement&Multimarket 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
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Nadere informatievan Ministerie van Defensie, Marinebedrijf Standaarden Laboratorium van de Techniek Groep Defensie Speciale Producten
Locatie(s) waar activiteiten onder accreditatie worden uitgevoerd Hoofdkantoor Nieuwe Haven, Noord Voorlandweg, Gebouw Kaiser, Kamer D-1-016 1781 ZZ Den Helder Nederland LF 0 0 LF 1 0 LF 1 1 DC/LF Grootheden
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MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE IPx6R4CE DataSheet Rev.2. Final PowerManagement&Multimarket 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
Nadere informatie1 2 3 4 5 A B 6 7 8 9 [Nm] 370 350 330 310 290 270 250 230 210 190 [kw] [PS] 110 150 100 136 90 122 80 109 70 95 60 82 50 68 170 150 40 54 130 110 90 140 PS 125 PS 100 PS 30 20 41 27 70 1000 1500 2000
Nadere informatie1 10 2 3 4 5 7 9 A B 11 12 13 14 15 16 17 18 19 [Nm] 370 350 330 310 290 270 250 230 210 190 170 150 130 110 90 140 PS 100 PS 125 PS 70 1000 1500 2000 2500 3000 3500 4000 RPM [Nm] 475 450 425 400 375 350
Nadere informatie1
1 2 3 4 5 A B 7 9 [Nm] 370 350 330 310 290 270 250 230 210 190 [kw] [PS] 110 150 100 136 90 122 80 109 70 95 60 82 50 68 170 150 130 110 90 140 PS 125 PS 100 PS 70 1000 1500 2000 2500 3000 3500 4000 RPM
Nadere informatie1 2 3 4 5 7 A B 9 11 [Nm] 370 [kw] [PS] 110 150 350 330 100 136 310 90 122 290 270 80 109 250 70 95 230 210 60 82 190 50 68 170 150 40 54 130 110 90 140 PS 125 PS 100 PS 30 20 41 27 70 1000 1500 2000 2500
Nadere informatie1 2 3 4 5 6 7 A B 8 9 10 11 [Nm] 370 [kw] [PS] 110 150 350 330 100 136 310 90 122 290 270 80 109 250 70 95 230 210 60 82 190 50 68 170 150 40 54 130 110 90 140 PS 100 PS 125 PS 30 20 41 27 70 1000 1500
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MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 6VCoolMOS P6PowerTransistor IPx6R23P6 DataSheet Rev.2.1 Final PowerManagement&Multimarket 6VCoolMOS P6PowerTransistor IPW6R23P6,IPP6R23P6,IPA6R23P6
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19 x 13 x 19 x 1,5 mm 0,57 314,00 324,00 344,00 364,00 20 x 15 x 20 x 1,5 mm 0,61 314,00 324,00 344,00 364,00 25 x 15 x 25x 2 mm 0,96 227,00 237,00 257,00 277,00 10 x 20 x 10 x 2 mm 0,56 227,00 237,00
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1 2 3 4 5 6 7 A B 8 9 10 11 [Nm] 370 [kw][ps] 110 150 350 330 310 100 136 90 122 290 270 80 109 250 70 95 230 210 60 82 190 50 68 170 150 40 54 130 110 90 140 PS 125 PS 100 PS 30 20 41 27 70 1000 1500
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Nadere informatieDeze bijlage is geldig van: tot Vervangt bijlage d.d.:
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